TOSHIBA TLP197G Technical data
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TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
TLP197G
TLP197G
Modem
Fax
PBX
Measurement Instrumentation
The TOSHIBA mini flat photo relay TLP197G is a small
outline photo relay,suitable for surface mount assembly.
The TLP197G consists of an gallium arsenide infrared emitting diode
optically coupled to a photo―MOS FET in a six lead 2.1mm height
package, which enable TLP197G to be applied in card modems.
The TLP197G is a bi―directional switch which can replace mechanical
relays in fax machines and modems etc.
• SOP 6pin(2.54SOP6): 1−form−A
• Peak off−state voltage: 350V (min)
• Trigger LED current: 3mA (max)
• On−state current:120mA(max)
(A connection)
• On−state resistance: 35Ω(max)
• Isolation voltage: 1500Vrms (min)
• UL recognized: UL1577, file No./E67349
• BSI approved: BS EN60065: 2002, certificate No.8753
BS EN60950-1: 2002, certificate No.8754
• SEMKO approved: SS EN60065
SS EN60950
• Option(V4)type
TUV approved: DIN EN 60747-5-2
Certificate no. 40009351
Unit in mm
JEDEC ―
EIAJ ―
TOSHIBA
Weight: 0.13g
Pin Configuration
1
2
3
6
5
4
(top view)
1 : Anode
2 : Cathode
3 : NC
4 : Drain D1
5 : Source
6 : Drain D2
1-Form-a
6 4
13
1
Schematic
1
2
6
5
4
2007-10-01
TLP197G
A
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta ≥ 25°C) ΔIF/°C −0.5 mA/°C
Pulse forward current (100μs pulse,100pps) IFP 1 A
Led
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Off−state output terminal voltage V
On−state current
Detector
On−state current derating (Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature(10 s) T
Isolation voltage (AC,1 min.,RH ≤ 60%) (Note 1) BVS 1500 Vrms
(Ta = 25°C)
A connection
B connection
C connection
A connection
B connection
C connection
350 V
OFF
ION 120 mA
ΔION/°C −1.2 mA/°C
−55~125 °C
stg
−40~85 °C
opr
260 °C
sol
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two−terminal device: Pins1,2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage V
Forward current IF 5 7.5 25 mA
On−state current(A connection) ION ⎯ ⎯ 100 mA
Operating temperature T
⎯ ⎯ 280 V
OFF
−20 ⎯ 65 °C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Circuit Connections
6
1
2
3
LOAD
C
5
or
4
DC
1
2
3
6
5
4
LOAD
DC
1
2
3
6
5
4
LOAD
DC
A Connection
B Connection
C Connection
2
2007-10-01
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