Datasheet TLP197G Datasheet (TOSHIBA)

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TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET

TLP197G

TLP197G

Modem

Fax

PBX

Measurement Instrumentation

The TOSHIBA mini flat photo relay TLP197G is a small
outline photo relay,suitable for surface mount assembly.
The TLP197G consists of an gallium arsenide infrared emitting diode
optically coupled to a photo―MOS FET in a six lead 2.1mm height
package, which enable TLP197G to be applied in card modems.
The TLP197G is a bi―directional switch which can replace mechanical
relays in fax machines and modems etc.

• SOP 6pin(2.54SOP6): 1−form−A

• Peak off−state voltage: 350V (min)

• Trigger LED current: 3mA (max)

• On−state current:120mA(max)

(A connection)

• On−state resistance: 35Ω(max)

• Isolation voltage: 1500Vrms (min)

• UL recognized: UL1577, file No./E67349

• BSI approved: BS EN60065: 2002, certificate No.8753

BS EN60950-1: 2002, certificate No.8754

• SEMKO approved: SS EN60065
SS EN60950

• Option(V4)type

TUV approved: DIN EN 60747-5-2
Certificate no. 40009351

Unit in mm

JEDEC ―

EIAJ ―

TOSHIBA

Weight: 0.13g

Pin Configuration

1

2

3

6

5

4

(top view)

1 : Anode

2 : Cathode

3 : NC

4 : Drain D1

5 : Source

6 : Drain D2

1-Form-a

6 4

13

1

Schematic

1

2

6

5

4

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TLP197G

A

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Forward current IF 50 mA

Forward current derating (Ta ≥ 25°C) ΔIF/°C −0.5 mA/°C

Pulse forward current (100μs pulse,100pps) IFP 1 A

Led

Reverse voltage VR 5 V

Junction temperature Tj 125 °C

Off−state output terminal voltage V

On−state current

Detector

On−state current derating (Ta ≥ 25°C)

Junction temperature Tj 125 °C

Storage temperature range T

Operating temperature range T

Lead soldering temperature(10 s) T

Isolation voltage (AC,1 min.,RH ≤ 60%) (Note 1) BVS 1500 Vrms

(Ta = 25°C)

A connection

B connection

C connection

A connection

B connection

C connection

350 V

OFF

ION 120 mA

ΔION/°C −1.2 mA/°C

−55~125 °C

stg

−40~85 °C

opr

260 °C

sol

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note 1): Device considered a two−terminal device: Pins1,2 and 3 shorted together and pins 4,5 and 6 shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage V

Forward current IF 5 7.5 25 mA

On−state current(A connection) ION ⎯ ⎯ 100 mA

Operating temperature T

⎯ ⎯ 280 V

OFF

−20 ⎯ 65 °C

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

Circuit Connections

6

1

2

3

LOAD

C

5

or

4

DC

1

2

3

6

5

4

LOAD

DC

1

2

3

6

5

4

LOAD

DC

A Connection

B Connection

C Connection

2

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TLP197G

<

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF=10mA 1.0 1.15 1.3 V

Reverse current IR VR=5V ⎯ ⎯ 10 μA

Led

Capacitance CT V=0, f=1MHz ⎯ 30 ⎯ pF

Off−state current I

Detector

Capacitance C

(Ta = 25°C)

V

OFF

V=0, f=1MHz ⎯ 40 ⎯ pF

OFF

=350V ⎯ ⎯ 1 μA

OFF

Coupled Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Trigger LED current IFT ION=120mA ⎯ 1 3 mA

On−state resistance

A

connection

(Ta = 25°C)

ION=120mA, IF=5mA ⎯ 22 35

RON

I
I

=20~120mA,

ON

=5mA

F

⎯ 26 40

Isolation Characteristics

(Ta = 25°C)

Ω

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance input to output CS VS=0, f=1MHz ⎯ 0.8 ⎯ pF

Isolation resistance RS VS=500V, R.H.

AC,1minute 1500 ⎯ ⎯

Isolation voltage BVS

AC,1second (in oil) ⎯ 3000 ⎯

DC,1minute (in oil) ⎯ 3000 ⎯ V

60% 5×1010 1014 ⎯ Ω

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Turn−οn time tON ⎯ 0.3 1

Turn−οff time t

OFF

(Note2): Switching time test circuit

IF

1

2

6

4

RL

V

V

CC

OUT

=200Ω (Note 2)

R

L

=20V, IF=5mA

V

CC

IF

V

OUT

t

ON

10%

⎯ 0.1 1

90%

t

OFF

V

rms

dc

ms

3

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TLP197G

100

I

F

– Ta

140

I

ON

– Ta

(mA)

F

I

Allowable forward current

(mA)

FP

I

Allowable pulse forward current

80

60

40

20

5000

3000

1000

500

300

100

50

30

0

－20

0

20

40

60

Ambient temperature Ta (°C)

– DR

I

FP

Pulse width ≦ 100μs

Ta = 25 °C

80

100

120

(mA)

ON

On-state current I

(mA)

F

5

Forward current I

120

100

40

100

0.5

0.3

80

60

20

－20

50

30

10

0

3

1

20

0

40 60

Ambient temperature Ta (°C)

I

F

Ta = 25 °C

–VF

80

100

10

－2.8

－2.4

－2.0

/ΔTa (mV/°C)

F

－1.6

－1.2

Forward voltage temperature

coefficient ΔV

－0.8

－0.4

－

3

10

0.1

0.3 1

3

2

－

3

3

10

Duty cycle ratio DR

/ΔTa – IF

ΔV

F

0.5

3 5

Forward current IF (mA)

1

－

10

10 50

0

10

3

30

1000

(mA)

FP

Pulse forward current I

500

300

100

0.1

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Forward voltage VF (V)

– VFP

I

FP

50

30

10

5

3

1

0.6

1.0 1.4

Pulse width ≦ 10μs

Repetitive

frequency = 100Hz

Ta = 2 5 °C

1.8

2.2 2.6

3.0

Pulse forward voltage VFP (V)

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TLP197G

ON

– V

ON

(A connection)

(mA)

FT

5

A Connection

ION = 120mA

4

3

2

I

FT

– Ta

(mA)

ON

－50

150

100

50

0

I

Ta = 25 °C

IF = 5mA

1

Trigger led current I

0

－40

－20

20

0

40 60

80

100

Ambient temperature Ta (°C)

– Ta

R

ON

(Ω)

40

A Connection

ION = 120mA

IF = 5mA

30

ON

20

10

On-state resistance R

0

－40

－20

20

0

40 60

80

100

Ambient temperature Ta (°C)

On-state current I

－100

－150

－2

－1

0

1

2

On-state voltage VON (V)

– Ta

I

1000

500

300

(mA)

100

OFF

50

30

10

5

Off-state current I

3

1

－20

0 20

OFF

40 60

V

= 350V

OFF

80 100

Ambient temperature Ta (°C)

tON – Ta

1000

VDD = 20V

RL = 200Ω

800

IF = 5ｍA

(μs)

600

ON

400

Turn-on time t

200

0

－40

－20

20

0

40

60 80

100

Ambient temperature Ta (°C)

400

350

300

(μs)

250

OFF

200

150

100

turn-off time t

50

－40

0

VDD = 20V

RL = 200Ω

IF = 5ｍA

－20

0

Ambient temperature Ta (°C)

5

t

OFF

20

– Ta

40

60 80

2007-10-01

100

TLP197G

RESTRICTIONS ON PRODUCT USE

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

20070701-EN

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

6

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