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TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
TLP190B
TLP190B
Telecommunication
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA mini flat coupler TLP190B is a small outline coupler,
suitable for surface mount assembly.
The TLP190B consists of a GaAℓAs light emitting diode, optically
coupled to a series connected photo diode array which is suitable for
MOS FET gate drive.
• Open voltage: 7.0V (min.)
• Short current: 12.0μA (min.)
• Isolation voltage: 2500Vrms (min.)
• UL recognized: UL1577, file no. E67349
Absolute Maximum Ratings
(Ta = 25°C)
Unit in mm
TOSHIBA 11−4C1
Weight: 0.09 g
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current
derating (Ta ≥ 25°C)
LED
Detector
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10 s) T
Isolation voltage
(AC, 1 min., R.H. ≤ 60%) (Note)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Pulse forward current
(100μs pulse 100pps)
Reverse voltage VR 3 V
Junction temperature T
Forward current IFD 50 μA
Reverse voltage VRD 10 V
Junction temperature T
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
/ °C −0.5 mA / °C
ΔI
F
1 A
I
FP
125 °C
j
125 °C
j
−55~125 °C
stg
−40~85 °C
opr
260 °C
sol
2500 Vrms
BV
S
Pin Configuration
1
3
1. Anode
3. Cathode
4. Cathode
6. Anode
(top view)
6
4
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
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TLP190B
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Forward current IF ― 20 25 mA
Operating temperature T
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V
LED
Detector
Reverse current IR VR = 3 V — — 10 μA
Capacitance C
Forward voltage VFD IC = 10 μA ― 7 — V
Reverse current IRD VR = 10 V ― 1 — nA
Capacitance
(anode to cathode)
C
Coupled Electrical Characteristics
−25
opr
(Ta = 25°C)
V = 0, f = 1 MHz — 30 60 pF
T
V = 0, f = 1 MHz — ― — pF
TD
(Ta = 25°C)
― 85 °C
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Open voltage VOC IF = 10 mA 7 8 — V
Short current ISC IF = 10 mA 12 20 — μA
Isolation Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to output C
Isolation resistance R
Isolation voltage BV
(Ta = 25°C)
S
S
VS = 0, f = 1 MHz — 0.8 — pF
VS = 500 V, R.H. ≤ 60% 5×10
AC, 1 minute 2500 — —
AC, 1 second in oil — 5000 —
S
DC, 1 minute in oil — 5000 — Vdc
10 1014
— Ω
Switching Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Turn−on time t
Turn−off time t
(Ta = 25°C)
ON
OFF
IF = 20 mA, RSH = 510 kΩ
= 1000pF (Fig. 1)
C
L
— 0.2 — ms
— 1 — ms
Fig. 1 Switching time test circuit
IF
R
SH
R
External shunt resistance
SH :
V
OUT
C
L
I
V
F
OUT
0V
t
ON
5V
1V
t
OFF
Vrms
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−
−
Allowable forward current
100
80
60
(mA)
F
I
40
20
0
−20
I
– Ta
F
20
0 100
40
60
80
Ambient temperature Ta (°C)
/ΔTa (mV / °C)
Forward voltage temperature
Coefficient ΔV
−4.0
−3.6
−3.2
−2.8
−2.4
F
−2.0
−1.6
−1.2
−0.8
0.1 0.3
0.5
Forward current IF (mA)
ΔV
/ΔTa – IF
F
1
TLP190B
3
10
30
I
– VF
1.4
F
Ta = 25 °C
1.6 1.8
2.0
2.2
5000
3000
1000
(mA)
FP
500
300
100
50
30
Pulse forward current I
10
3
3
10
3 3 3
Duty cycle ratio D
100
50
30
(mA)
F
10
5
3
Forward current I
1
1.0
1.2
Forward voltage VF (V)
I
– DR
FP
2
10
Pulse width ≤ 100μs
Ta = 25 °C
1
−
10
R
100
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2007-10-01
TLP190B
I
– VO
O
Ta = 25 °C
40
20
(μA)
O
0
−20
Output current I
−40
−60
0
2
IF=0mA
4
5mA
10mA
15mA
20mA
25mA
6
10
8
Output voltage VO (V)
100
30
10
(ms)
OFF
3
t
ON,
1
0.3
0.1
Switching time t
0.03
0.01
300 3000
102 103 104
Load capacitance CL (PF)
t
ON, tOFF
300kΩ
510kΩ
1MΩ
2.4MΩ
– CL
RSH=2.4MΩ
1MΩ
510kΩ
300kΩ
IF=20mA
IF
V
OUT
0V
Ta = 25 °C
IF = 20 mA
5V
tON t
RSH
OFF
1V
t
OFF
tON
V
OUT
C
L
(V)
OC
Open voltage V
10
8
6
4
2
0
12
10
RSH OPEN
1
V
– IF
OC
1MΩ
510kΩ
300kΩ
Ta = 25 °C
RSH=2.4MΩ
3 5 10
Forward current IF (mA)
V
– Ta
OC
30
50
100
I
– IF
100
50
30
10
(μA)
SC
3
1
Short current I
0.5
0.3
0.1
1
3 5 10
SC
Ta = 25 °C
30
50
100
Forward current IF (mA)
I
– Ta
24
20
SC
(V)
OC
Open voltage V
8
6
4
16
(μA)
SC
12
8
Short current I
2
0
−20
0
40
60
IF = 10mA
80
100
120 20
Ambient temperature Ta (°C)
4
4
0
−20
0
40
60
IF = 10mA
80
100
120 20
Ambient temperature Ta (°C)
2007-10-01
TLP190B
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01
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