查询TLP168J供应商
TOSHIBA Photocoupler GaAℓAs IRed & Photo-Triac
TENTATIVE
TLP168J
TLP168J
Triac Drive
Programmable Controllers
AC−Output Module
Solid State Relay
The TOSHIBA mini flat coupler TLP168J is a small outline coupler,
suitable for surface mount assembly.
The TLP168J consists of a photo triac, optically coupled to a GaAℓAs
infrared emitting diode.
· Zero−voltage crossing turn−on
· Peak off−state voltage: 600 V (min.)
· Trigger LED current: 3 mA (max.)
· On−state current: 70 mA (max.)
· Isolation voltage: 2500 Vrms (min.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 20 mA
Forward current derating
(Ta ≥ 25°C)
Peak forward current
LED
(100µs pulse, 100 pps)
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Off- state output terminal
voltage
On-state RMS
current
On-state current derating
(Ta ≥ 25°C)
Detector
Peak on-state current
(100µs pulse, 120 pps)
Peak nonrepetitive surge
current (PW=10ms, DC=10%)
Junction temperature Tj 115 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
Isolation voltage
(AC, 1 min., R.H. ≤ 60%) (Note)
Ta=25°C 70
Ta=70°C
∆I
/ °C -0.2 mA / °C
F
I
1 A
FP
V
600 V
DRM
I
T(RMS)
∆I
/ °C -0.67 mA / °C
T
I
2 A
TP
I
1.2 A
TSM
-55~125 °C
stg
-40~100 °C
opr
260 °C
sol
BV
2500 Vrms
S
40
mA
TOSHIBA 11−4C3
Weight: 0.09 g
Pin Configurations
1
3
zc
1: Anode
3: Cathode
4: Terminal 1
6: Terminal 2
Unit in mm
6
4
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4
and 6 shorted together.
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Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
TLP168J
Supply voltage VAC ― ― 240 V
Forward current IF 4.5 6 7.5 mA
Peak on-state current ITP ― ― 1 A
Operating temperature T
-10 ― 85 °C
opr
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF=10mA 1.2 1.4 1.7 V
Reverse current IR VR=3V ― ― 10 µA
LED
Capacitance CT V=0, f=1MHz ― 30 ― pF
Peak off-state current I
Peak on-state voltage VTM ITM=70mA ― 1.7 2.8 V
Holding current IH ― ― 0.6 ― mA
Critical rate of rise of off-
Detector
state voltage
Critical rate of rise of
commutating voltage
DRM
dv / dt V
dv / dt(c)
Coupled Electrical Characteristics
(Ta = 25°C)
V
DRM
in
Vin=60Vrms
I
=15mArms
T
(Ta = 25°C)
=600V ― 10 1000 nA
=240Vrms, Ta=85°C 200 500 ― V / µs
ac
― 0.2 ― V / µs
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current IFT VT=6V ― ― 3 mA
Inhibit voltage VIH IF=Rated IFT ― ― 50 V
=Rated I
I
Leakage in inhibited state IIH
Capacitance (input to output) Cs VS=0, f=1MHz ― 0.8 ― pF
Isolation resistance RS VS=500V, R.H. ≤ 60% 5×1010 1014 ― Ω
Isolation voltage BVS
F
VT= Rated V
AC, 1 minute 2500 ― ―
AC, 1 second, in oil ― 5000 ―
DC, 1 minute, in oil ― 5000 ― Vdc
FT
DRM
― 200 600 µA
Vrms
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2002-09-25
TLP168J
I
100
80
60
(mA)
F
I
40
Allowable forward current
20
0
-20
0 20 40 60 80 100
Ambient temperature Ta (°C)
– Ta
F
-4.0
-3.6
-3.2
-2.8
-2.4
/ ∆Ta ( mV / ° C )
F
-2.0
-1.6
-1.2
Forward voltage temperature
coefficient ∆V
-0.8
0.1
/ ∆Ta – IF
∆V
F
0.3 0.5 1 3 5 10 30
Forward current IF (mA)
I
100
50
30
(mA)
F
10
5
3
Forward current I
1
1.0
1.2 1.4 1.6 1.8 2.0 2.2
Forward voltage V
– VF
F
Ta = 25 °C
(V)
F
5000
3000
(mA)
FP
1000
500
300
100
50
30
Pulse forward current I
10
3
I
FP
3
-
10
3 3 3 10
-
Duty cycle ratio D
– DR
Pulse width≦100µs
Ta = 25°C
2
10
1
-
100
R
(RMS) – Ta
I
120
100
T(RMS)
80
T
60
(mA)
40
20
R.M.S. on-state current I
0
-20
0 20 40 60 80 100 120
Ambient temperature Ta (°C)
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TLP168J
Normalized I
3
2
FT
1.2
1
FT
– Ta
VT = 6V
3
2
1.2
H
1
Normalized I
– Ta
H
0.5
(Arbitrary unit)
0.3
0.5
(Arbitrary unit)
0.3
Holding current I
Trigger led current I
0.1
-40
-20 0 40 60 80 100
20
Ambient temperature Ta (°C)
0.1
-40
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
DRM
– Ta
DRM
3
10
V
DRM
2
10
Normalized I
= Rated
1
10
(Arbitrary unit)
DRM
1.4
1.2
1.0
0.8
(ARBITRARY UNIT)
0.6
Normalized V
DRM
– Ta
Peak off-state current I
0
10
0 20 40 60 80 100
Ambient temperature Ta (°C)
3
Normalized V
2
1.2
IH
1
0.5
(Arbitrary unit)
0.3
IH
– Ta
Inhibit voltage V
IF = Rated IFT
0.1
-40
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
0.4
Off-state output terminal voltage V
0.2
-40 -20 0 40 80 20 60 100
Ambient temperature Ta (°C)
3
Normalized I
2
1.2
IH
1
0.5
0.3
(Arbitrary unit)
Inhibit current I
0.1
-40
-20 0 20 40 60 80 100
– Ta
IH
IF = Rated I
V
Rated
T =
FT
V
DRM
Ambient temperature Ta (°C)
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2002-09-25
TLP168J
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-09-25
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