查询TLP161G供应商
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP161G
TLP161G
Triac Drive
Programmable Controllers
AC−Output Module
Solid State Relay
The TOSHIBA mini flat coupler TLP161G is a small outline coupler,
suitable for surface mount assembly.
The TLP161G consists of a photo triac, optically coupled to a gallium
arsenide infrared emitting diode.
· Zero−voltage crossing turn−on
· Peak off−state voltage: 400V(min.)
· Trigger LED current: 10mA(max.)
· On−state current: 70mA(max.)
· Isolation voltage: 2500Vrms(min.)
· UL recognized: UL1577, file no. E67349
Trigger LED Current
Unit in mm
TOSHIBA 11−4C3
Weight: 0.09 g
Classi-
fication*
(IFT5) ― 5 T5
(IFT7) ― 7 T5, T7
Standard ― 10 T5, T7, blank
*Ex. (IFT5); TLP161G(IFT5)
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP161G(IFT5): TLP161G
Trigger LED Current (mA)
VT=3V, Ta=25°C
Min. Max.
Marking Of
Classification
Pin Configurations
1
3
1. ANODE
3. CATHODE
4. TERMINAL 1
6. TERMINAL 2
ZC
6
4
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TLP161G
Maximum Ratings
Forward current IF 50 mA
Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C
Peak forward current (100µs pulse, 100pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Off-state output terminal voltage V
On-state RMS current
On-state current derating (Ta ≥ 25°C) ∆IT / °C -0.67 mA / °C
Peak on-state current (100µs pulse, 120pps) ITP 2 A
Detector
Peak nonrepetitive surge current
(PW=10ms, DC=10%)
Junction temperature Tj 115 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
Isolation voltage (AC, 1min., R.H.≤ 60%) (Note) BVS 2500 Vrms
(Ta = 25°C)
Characteristic Symbol Rating Unit
400 V
DRM
Ta=25°C 70
Ta=70°C
I
T(RMS)
I
1.2 A
TSM
-55~125 °C
stg
-40~100 °C
opr
260 °C
sol
40
mA
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4
and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VAC ― ― 120 Vac
Forward current IF 15 20 25 mA
Peak on-state current ITP ― ― 1 A
Operating temperature T
-25 ― 85 °C
opr
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TLP161G
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF=10mA 1.0 1.15 1.3 V
Reverse current IR V
LED
Capacitance CT V=0, f=1MHz ― 30 ― pF
Peak off-state current I
Peak on-state voltage VTM ITM=70 mA ― 1.7 2.8 V
Holding current IH ― ― 0.6 ― mA
Critical rate of rise of
Detector
off-state voltage
Critical rate of rise of
commutating voltage
DRM
dv / dt V
dv / dt(c) V
(Ta = 25°C)
R
V
DRM
in
in
=5V ― ― 10 µA
=400V ― 10 1000 nA
=120Vrms, Ta=85°C (Fig.1) 200 500 ― V / µs
=30Vrms, IT=15mA (Fig.1) ― 0.2 ― V / µs
Coupled Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current IFT VT=3V ― 5 10 mA
Inhibit voltage VIH IF=rated IFT ― ― 40 V
Leakage in inhibited state IIH
Capacitance (input to output) CS VS=0, f=1MHz ― 0.8 ― pF
Isolation resistance RS VS=500V, R.H.≤ 60% 1×1012 1014 ― Ω
Isolation voltage BVS
(Ta = 25°C)
=rated IFT
I
F
V
=rated V
T
AC, 1 minute 2500 ― ―
AC, 1 second, in oil ― 5000 ―
DC, 1 minute, in oil ― 5000 ― Vdc
DRM
― 100 300 µA
Vrms
Fig.1 dv / dt test circuit
V
CC
+
-
R
120W
in
1 6
3 4
R
2k W
V
in
～
L
dv / dt (c)
5V，VCC
0V
dv / dt
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TLP161G
– Ta
I
60
F
120
I
T(RMS)
– Ta
(mA)
F
I
Allowable forward current
(mA)
FP
current I
Allowable pulse forward
3000
1000
500
300
100
50
40
30
20
10
50
30
0
-20
40 80 100
0 20
60
Ambient temperature Ta (°C)
– DR
I
FP
Pulse width ≤ 100 µs
Ta = 25°C
120
100
80
(mA)
60
T(RMS)
I
40
R.M.S. on-state current
20
0
0 40 80 100 120 60 20
-20
Ambient temperature Ta (°C)
– VF
I
100
Ta = 2 5° C
50
30
(mA)
10
F
5
3
1
0.5
Forward current I
0.3
F
10
/ ,Ta (mV / °C)
F
Forward voltage temperature
coefficient ,V
3
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
3
-
10
3 10
Duty cycle ratio D
0.3
Forward current I
2
-
3 10
/ DTa – IF
DV
F
1 3 10 30 50
1
-
3 100
R
(mA)
F
0.1
0.8 1.2 1.4 1.6 1.8
0.6 1.0
Forward voltage V
1000
500
300
(mA)
FP
100
50
30
10
5
3
Pulse forward current I
1
1.0
0.6
Pulse forward voltage V
– VFP
I
FP
Pulse width ≤ 10 µs
Repetitive frequency
= 100 Hz
Ta = 2 5° C
1.4
F
2.2 2.6 3.0
1.8
(V)
(V)
FP
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TLP161G
Normalized I
3
2
FT
– Ta
VT = 3V
3
2
Normalized I
– Ta
H
Trigger led current I
Peak off-state current I
FT
DRM
1.2
1
0.5
(arbitrary unit)
0.3
0.1
-20 0 80 40
-40
20 60
100
Ambient temperature Ta (°C)
3
Normalized I
10
V
= Rated
DRM
2
10
1
10
(arbitrary unit)
0
10
0
20 40 80 60
DRM
– Ta
100
Ambient temperature Ta (°C)
Ｈ
Holding current I
DRM
Off-state output terminal voltage V
1.2
1
0.5
(arbitrary unit)
0.3
0.1
-40
-20 0
Ambient temperature Ta (°C)
1.4
1.2
1.0
0.8
(arbitrary unit)
0.6
0.4
0.2
-20 0 80 40 20 60
-40
20 60 80
40
Normalized V
DRM
– Ta
100
100
Ambient temperature Ta (°C)
3
2
1.2
IH
0.5
(arbitrary unit)
Inhibit voltage V
0.3
0.1
-40 1-20 0 80 40
Ambient temperature Ta (°C)
Normalized V
20 60
– Ta
IH
IF = Rated IFT
100
– Ta
IH
IF = Rated IFT
VT = Rated V
40
DRM
100
Inhibit current I
Normalized I
3
2
1.2
1
IH
0.5
(arbitrary unit)
0.3
0.1
-40
-20 0
20 60 80
Ambient temperature Ta (°C)
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TLP161G
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-09-25
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