Datasheet TLP141G Datasheet (TOSHIBA)

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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TENTATIVE

TLP141G

TLP141G

Programmable Controllers

AC−Output Module

Solid State Relay

The TOSHIBA mini flat coupler TLP141G is a small outline coupler,
suitable for surface mount assembly.
The TLP141G consists of a photo thyristor, optically coupled to a gallium
arsenide infrared emitting diode.

· Peak off−state voltage: 400 V (min.)

· Trigger LED current: 10 mA (max.)

· On-state current: 150 mA (max.)

· Isolation voltage: 2500 Vrms (min.)

· UL recognized: UL1577, file no. E67349

Unit in mm

TOSHIBA 11−4C2

Weight: 0.09 g

Pin Connections

1

3

6

5

4

1 : Anode
3 : Cathode
4 : Cathode
5 : Anode.
6 : Gate

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TLP141G

Maximum Ratings

Forward current IF 50 mA

Forward current derating (Ta ≥ 53°C) ∆IF/°C -0.7 mA / °C

Peak forward current (100 µs pulse, 100 pps) IFP 1 A

LED

Reverse voltage VR 5 V

Junction temperature Tj 125 °C

Peak forward voltage(RGK = 27kΩ) V

Peak reverse voltage(RGK = 27kΩ) V

On-state current I

On-state current derating (Ta ≥ 25°C) ∆IT / °C -2.0 mA / °C

Detector

Peak one cycle surge current I

Peak reverse gate voltage VGM 5 V

Junction temperature Tj 100 °C

Storage temperature range T

Operating temperature range T

Lead soldering temperature (10 s) T

Isolation voltage (AC, 1 min., RH ≤ 60%) (Note 1) BVS 2500 Vrms

(Ta = 25°C)

Characteristic Symbol Rating Unit

400 V

DRM

400 V

DRM

150 mA

T(RMS)

2 A

TSM

-55~125 °C

stg

-55~100 °C

opr

260 °C

sol

(Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VAC ― ― 120 Vac

Forward current IF 15 20 25 mA

Operating temperature T

Gate to cathode resistance RGK ― 27 33 kΩ

Gate to cathode capacitance CGK ― 0.01 0.1 µF

-25 ― 85 °C

opr

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TLP141G

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse current IR V

LED

Capacitance CT V = 0, f = 1 MHz ― 30 ― pF

Off-state current I

Reverse current I

On-state voltage VTM ITM = 100 mA ― 0.9 1.3 V

Detector

Holding current IH RGK = 27 kΩ ― 0.2 1 mA

Off-state dv / dt dv/dt VAK = 280 V, RGK = 27 kΩ 5 10 ― V / µs

Capacitance Cj V = 0, f = 1 MHz

Coupled Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

(Ta = 25°C)

DRM

RRM

(Ta = 25°C)

= 5 V ― ― 10 µA

R

= 400 V

V

AK

R

= 27 kΩ

GK

= 70 mA

V

KA

R

= 27 kΩ

GK

Ta = 25°C ― 10 5000 nA

Ta = 100°C ― 1 100 µA

Ta = 25°C ― 10 5000 nA

Ta = 100°C ― 1 100 µA

Anode to gate ― 20 ―

Gate to cathode ― 350 ―

pF

Trigger LED current IFT VAK = 6 V, RGK = 27kΩ ― 4 10 mA

Turn-on time ton IF = 50mA, RGK = 27kΩ ― 10 ― µs

Coupled dv / dt dv/dt VS = 500 V, RGK = 27kΩ 500 ― ― V / µs

Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF

Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 ― Ω

Isolation voltage BVS

AC, 1 minute 2500 ― ―

AC, 1 second, in oil ― 5000 ―

DC, 1 minute, in oil ― 5000 ― Vdc

Vrms

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TLP141G

)

– Ta

I

100

80

60

(mA)

F

40

I

Allowable forward current

20

0

－20

0 20

3000

1000

F

40 80 100

60

– DR

I

FP

Pulse width ≤ 100 µs

Ta = 25°C

120

R.m.s. on-state current

250

200

150

(RMS) (mA)

100

T

I

50

0

－20

20

0

Ambient temperature Ta (°C)

100

Ta = 2 5° C

30

– Ta

I

T(RMS)

40 80 100

60

– VF

I

F

120

(mA)

FP

current I

Allowable pulsed forward

(mA)

C

/ r∆Ta ( m V/ ° C)

F

∆V

Forward voltage temperature coeffecient

100

－3.2

－2.8

－2.4

－2.0

－1.6

－1.2

－0.8

－0.4

(mA)

10

F

3

1

30

10

3

－

10

3 10

2

－

3 10

Duty cycle ratio D

/∆Ta - IF

∆V

F

1

－

3 100

R

Forward current I

0.3

0.1

1000

0.6

0.8

1.0

Forward voltage V

I

FP

1.2 1.4 1.6 1.8

(V)

F

– VFP

300

(mA

FP

100

30

10

Pulse width ≤ 10 µs

Pepetitive frequency

= 100 Hz

Ta = 2 5° C

1.4

1.8

FP

(V)

0.1

0.5 1 3 5 10 30 50

0.3

Forward current I

(mA)

F

3

Pulse forward current I

1

0.6

1.0 2.2 2.6 3.0

Pulse forward voltage V

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TLP141G

– IF

t

30

20

(μs)

on

10

on

Ta = 25°C

RL=100Ω

VAA=50V

RGK=10kΩ

200

100

50

30

dv / dt – R

GK

Ta = 25°C

VAK=200V

400V

Turn-on time t

Trigger LED current

(mA)
I

Holding current

27kΩ

1

0

10

20

30

40

Critical rate of rise of

10

Off-state voltage dv / dt (V / μs)

Forward current IF(mA)

20

10

(mA)

FT

I

5

3

0

20 40 60 80

– Ta

I

FT

RGK=10kΩ

27kΩ

V

=6V

A

Ｋ

RL=100Ω

100

1

3 5 30 10

50

100

Gate-cathode resistance RGK (kΩ)

– RGK

I

FT

100

50

(mA)

30

FT

Ta = 2 5° C

VAK=6V

RL=100Ω

Ambient temperature Ta (°C)

– Ta

I

0.7

0.5

0.3

H

H

RGK=10kΩ

27kΩ

10

5

Trigger LED current I

2

1

3 5 10

Gate-cathode resistance R

30

50

GK

100

(kΩ)

200

0.1

0

20 40 60

Ambient temperature Ta (°C)

dv / dt – C

Ta = 85°C

500

V

= 400V

AK

300

RGK= 27kΩ

100

50

30

off-state voltage

dv / dt (V/μs)

Critical rate of rise of

10

5

0.001

0.003

GK

0.005

Gate-cathode capacitance CGK(μF)

80

100

5

3

– RGK

I

H

Ta = 25°C

(mA)

H

1

0.5

0.3

Holding current I

0.01

5

0.1
1

3 10

5

Gate-cathode resistance R

30 50 100

(kΩ)

GK

200

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TLP141G

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

000707EBC

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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