TOSHIBA TLP137 Technical data
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TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP137
TLP137
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP137 is a small outline coupler,
suitable for surface mount assembly.
TLP137 consists of a gallium arsenide infrared emitting diode, optically
coupled to a photo transistor, and provides high CTR at low input
current.
TLP137 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
z Collector−emitter voltage: 80V(min.)
z Current transfer ratio: 100%(min.)
Rank BV: 200%(min.)
z Isolation voltage: 3750Vrms(min.)
z UL recognized: UL1577, file No. E67349
z Current transfer ratio
Classi−
fication
V
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, Blank
Current Transfer Ratio (min.)
Ta = 25°C Ta =−25~75°C
I
= 1mA
F
= 0.5V
CE
I
= 0.5mA
F
= 1.5V
V
CE
I
= 1mA
F
V
CE
= 0.5V
Marking
Of
Classi−
fication
TOSHIBA 11−4C2
Weight: 0.09 g
Pin Configurations
1
Unit in mm
(top view)
6
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP137 (BV): TLP137
5
3
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
1
4
2007-10-01
TLP137
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) I
LED
FP
1 A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage V
Collector−base voltage V
Emitter−collector voltage V
Emitter−base voltage V
Collector current I
Detector
Peak collector current (10ms pulse, 100pps) I
CEO
CBO
ECO
EBO
C
CP
80 V
80 V
7 V
7 V
50 mA
100 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature T
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
stg
opr
sol
j
125 °C
−55~125 °C
−55~100 °C
260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C
Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BV
S
3750 V r m s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
2
2007-10-01
TLP137
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
Reverse current I
LED
Capacitance C
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
Emitter−base breakdown voltage
Collector dark current I
Detector
Collector dark current I
Collector dark current I
DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 1000 ― ―
Capacitance (collector to emitter)
F
R
T
V
(BR)CEOIC
V
(BR)ECOIE
V
(BR)CBOIC
V
(BR)EBOIE
CEO
CER
VCB = 10V ― 0.1 ― nA
CBO
C
CE
Coupled Electrical Characteristics
(Ta = 25°C)
IF = 10mA 1.0 1.15 1.3 V
VR = 5V ― ― 10 μA
V = 0, f = 1MHz ― 30 ― pF
= 0.5mA 80 ― ― V
= 0.1mA 7 ― ― V
= 0.1mA 80 ― ― V
= 0.1mA 7 ― ― V
VCE = 48V ― 10 100 nA
V
= 48V, Ta = 85°C ― 2 50 μA
CE
V
= 48V, Ta = 85°C
CE
= 1MΩ
R
BE
V= 0, f = 1MHz ― 12 ― pF
(Ta = 25°C)
― 0.5 10 μA
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Current transfer ratio IC / I
Low input CTR IC / I
Base photo−current IPB IF = 1mA, VCB = 5V ― 5 ― μA
Collector-emitter
saturation voltage
Off−state collector current I
V
CE(sat)
C(off)
F(low)
IF = 1mA, VCE = 0.5V
F
Rank BV
IF = 0.5mA, VCE = 1.5V
Rank BV
IC = 0.5mA, IF = 1mA ― ― 0.4
IC = 1mA, IF = 1mA
Rank BV
V F = 0.7V, VCE = 48V ― ― 10 μA
100 ― 1200
200 ― 1200
50 ― ―
100 ― ―
― 0.2 ―
― ― 0.4
%
%
V
3
2007-10-01
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