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TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP137
TLP137
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP137 is a small outline coupler,
suitable for surface mount assembly.
TLP137 consists of a gallium arsenide infrared emitting diode, optically
coupled to a photo transistor, and provides high CTR at low input
current.
TLP137 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
z Collector−emitter voltage: 80V(min.)
z Current transfer ratio: 100%(min.)
Rank BV: 200%(min.)
z Isolation voltage: 3750Vrms(min.)
z UL recognized: UL1577, file No. E67349
z Current transfer ratio
Classi−
fication
V
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, Blank
Current Transfer Ratio (min.)
Ta = 25°C Ta =−25~75°C
I
= 1mA
F
= 0.5V
CE
I
= 0.5mA
F
= 1.5V
V
CE
I
= 1mA
F
V
CE
= 0.5V
Marking
Of
Classi−
fication
TOSHIBA 11−4C2
Weight: 0.09 g
Pin Configurations
1
Unit in mm
(top view)
6
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP137 (BV): TLP137
5
3
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
1
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2007-10-01
TLP137
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) I
LED
FP
1 A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage V
Collector−base voltage V
Emitter−collector voltage V
Emitter−base voltage V
Collector current I
Detector
Peak collector current (10ms pulse, 100pps) I
CEO
CBO
ECO
EBO
C
CP
80 V
80 V
7 V
7 V
50 mA
100 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature T
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
stg
opr
sol
j
125 °C
−55~125 °C
−55~100 °C
260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C
Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BV
S
3750 V r m s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
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2007-10-01
TLP137
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
Reverse current I
LED
Capacitance C
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
Emitter−base breakdown voltage
Collector dark current I
Detector
Collector dark current I
Collector dark current I
DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 1000 ― ―
Capacitance (collector to emitter)
F
R
T
V
(BR)CEOIC
V
(BR)ECOIE
V
(BR)CBOIC
V
(BR)EBOIE
CEO
CER
VCB = 10V ― 0.1 ― nA
CBO
C
CE
Coupled Electrical Characteristics
(Ta = 25°C)
IF = 10mA 1.0 1.15 1.3 V
VR = 5V ― ― 10 μA
V = 0, f = 1MHz ― 30 ― pF
= 0.5mA 80 ― ― V
= 0.1mA 7 ― ― V
= 0.1mA 80 ― ― V
= 0.1mA 7 ― ― V
VCE = 48V ― 10 100 nA
V
= 48V, Ta = 85°C ― 2 50 μA
CE
V
= 48V, Ta = 85°C
CE
= 1MΩ
R
BE
V= 0, f = 1MHz ― 12 ― pF
(Ta = 25°C)
― 0.5 10 μA
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Current transfer ratio IC / I
Low input CTR IC / I
Base photo−current IPB IF = 1mA, VCB = 5V ― 5 ― μA
Collector-emitter
saturation voltage
Off−state collector current I
V
CE(sat)
C(off)
F(low)
IF = 1mA, VCE = 0.5V
F
Rank BV
IF = 0.5mA, VCE = 1.5V
Rank BV
IC = 0.5mA, IF = 1mA ― ― 0.4
IC = 1mA, IF = 1mA
Rank BV
V F = 0.7V, VCE = 48V ― ― 10 μA
100 ― 1200
200 ― 1200
50 ― ―
100 ― ―
― 0.2 ―
― ― 0.4
%
%
V
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2007-10-01
TLP137
Coupled Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Current transfer ratio IC / I
Low input CTR IC / I
(Ta = −25~75°C)
F
F(low)
Isolation Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) C
Isolation resistance RS V
Isolation voltage BV
(Ta = 25°C)
S
S
Switching Characteristics
(Ta = 25°C)
IF = 1mA, VCE = 0.5V
Rank BV
IF = 0.5mA, VCE = 1.5V
Rank BV
VS = 0, f = 1MHz ― 0.8 ― pF
= 500V 5×10
AC, 1minute 3750 ― ―
AC, 1second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc
50 ― ―
100 ― ―
― 50 ―
― 100 ―
10
1014 ― Ω
%
%
Vrms
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 8 ―
Fall time tf ― 8 ―
Turn−on time ton ― 10 ―
Turn−off time t
Turn−on time tON ― 10 ―
Storage time tS ― 50 ―
Turn-off time t
Turn−on time tON ― 12 ―
Storage time tS ― 30 ―
Turn-off time t
off
OFF
OFF
= 10V, IC = 2mA
V
CC
= 100Ω
R
L
= 4.7 kΩ (Fig.1)
R
L
= OPEN
R
BE
= 5 V, IF = 1.6mA
V
CC
= 4.7kΩ (Fig.1)
R
L
= 470kΩ
R
BE
= 5 V, IF = 1.6mA
V
CC
― 8 ―
― 300 ―
― 100 ―
Fig. 1 Switching time test circuit
I
V
I
F
R
L
CC
V
CE
RBE
F
t
S
V
CE
t
ON
4.5V
0.5V
t
OFF
μs
μs
μs
VCC
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2007-10-01
TLP137
–
–
P
Ta
C
100
I
Ta
F
200
(mA)
F
I
Allowable forward current
(mA)
FP
I
Pulse forward current
80
60
40
20
3000
1000
500
300
100
50
30
0
－20
40 80 100
0 20
60
Ambient temperature Ta (°C)
I
– DR
FP
PULSE WIDTH ≦ 100 μs
Ta = 25 °C
120
(mw)
C
dissipation P
Allowable collector power
(mA)
F
Forward current I
160
120
100
0.5
0.3
80
40
－20
50
30
10
0
5
3
1
0
40 80 100
20
Ambient temperature Ta (°C)
I
F
Ta = 25 °C
– VF
60
120
/ ⊿Ta( m V / ﾟ C)
F
⊿V
Forward voltage temperature coefficient
10
－3.2
－2.8
－2.4
－2.0
－1.6
－1.2
－0.8
－0.4
3
0.1
3
－
10
3 10
0.5 1 3 5 10 30 50
0.3
Forward current I
2
－
3 10
Duty cycle ratio D
⊿ V
/ ⊿Ta － IF
F
F
(mA)
1
－
R
3 100
0.1
0.6
0.8
1.0
1.2 1.4
Forward voltage V
I
– VFP
1000
500
300
(mA)
FP
100
50
30
10
5
3
Pulse forward current I
1
1.0
0.6
FP
Pulse width ≦ 10 μs
Repetitive frequency
= 100 Hz
Ta = 25 °C
1.4
1.8
Pulse forward voltage V
(V)
F
2.2 2.6 3.0
FP
(V)
1.6
1.8
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2007-10-01
TLP137
I
I
I
– VCE
C
I
= 1.0mA
F
0.8mA
0.6mA
0.5mA
0.4mA
0.2mA
1.0
(mA)
C
Collector Current I
4
Ta = 25 °C
3
2
1
0
0
I
– VCE
C
I
= 1.0mA
F
0.8mA
0.6mA
0.5mA
0.4mA
0.2mA
2 4 8 6
Collector-emitter voltage VCE(V)
10
4
Ta = 25 °C
3
(mA)
C
2
1
Collector current I
0
0
0.2 0.4 0.8 0.6
Collector-emitter voltage VCE (V)
(mA)
C
Collector current I
(mA)
C
50
30
10
0.5
0.3
0.1
0.05
0.03
30
10
5
3
1
0.1
5
3
1
Sample A
Sample B
0.3
Forward current
Ta= 2 5° C
VCE=5V
IF
BE
BE
R
R
VCC
A
I
– IF
C
Ta = 25 °C
VCE = 5V
VCE = 1.5V
VCE = 0.5V
0.5
1 3 5 10
(mA)
F
I
– I
C
F at RBE
(%)
I
Current transfer ratio I
(μA)
PB
I
/ IF – IF
1000
Ta = 25 °C
F
500
300
100
50
30
0.1
Sample A
0.3
C /
Forward current
300
Ta= 2 5° C
100
I
F
30
10
A
3
C
Sample B
VCE = 5V
VCE = 1.5V
VCE = 0.5V
0.5
1 3 5 10
(mA)
F
I
– IF
PB
V
CB
VCB=0V
VCB=5V
0.5
0.3
R
=∞ 500kΩ 100kΩ 50kΩ
BE
Collector current I
0.1
0.1
0.5 1 5 3 10
0.3
Forward current I
(mA)
F
6
1
0.3
Base photo current I
0.1
0.1
0.3 1 3 5 10
0.5
Forward current I
(mA)
F
2007-10-01
TLP137
V
CE
(sat) – Ta
IF = 1mA
IC = 0.5mA
101
I
CEO
– Ta
0.16
0.14
) (μA)
CEO
(I
D
Collector dark current I
(mA)
C
Collector current I
100
10-1
10-2
10-3
10-4
0.5
0.3
0.1
0.05
30
10
3
1
5
VCE=48V
5V
Ambient temperature Ta (°C)
I
– Ta
C
IF = 2mA
1mA
0.5mA
0.2mA
－20
0 20 40 60 80 100
Ambient temperature Ta (°C)
24V
10V
100
V
VCE=0.5V
CE
=1.5V
0.12
0.10
0.08
(sat) (V)
CE
0.06
V
0.04
Collector -emitter saturation voltage
0.02
0
－40
－20 20
0
40
60
80
100
Ambient temperature Ta (°C)
120 0 20 40 80 60
Switching Time – RL
300
100
50
30
Switching time (μs)
10
5
3
1
1
3 10 30 50 100
t
OFF
tS
tON
Ta = 25 °C
IF=1.6mA
VCC=5V
RBE=470kΩ
5
Load resistance RL (kΩ)
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2007-10-01
TLP137
Switching Time – R
1000
Ta = 25 °C
IF=1.6mA
500
VCC=5V
RL=4.7kΩ
300
t
OFF
BE
5000
Ta = 25 °C
3000
IF=1.6mA
VCC=5V
1000
Switching Time – R
t
OFF
L
100
50
30
Switching time (μs)
10
5
3
1
100k
300k 1M 3M ∞
Base-emitter resistance RBE (Ω)
tS
tON
500
300
Swithing time (μs)
100
50
30
10
５
1
3
5
tS
tON
10 50
30
100
Load resistance RL (kΩ)
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2007-10-01
TLP137
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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