TOSHIBA TLP131 Technical data

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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP131
TLP131
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The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode.
· Collectoremitter voltage: 80V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 3750Vrms (min.)
· UL recognized: UL1577, file No. E67349
TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation.
Unit in mm
TOSHIBA 11−4C2
Weight: 0.09 g
Pin Configurations
1
3
1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base
(top view)
6
5
4
1
2002-09-25
Current Transfer Ratio
Current Transfer
Ratio (%)
(I
/ IF)
Type Classification
(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB
TLP131
Rank Y 50 150 Y, Y■
Rank GR 100 300 G, G■
Rank GB 100 600 G, G
IF = 5mA, VCE = 5V, Ta = 25°C
Min. Max.
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Maximum Ratings
Forward current IF 50 mA
Forward current derating (Ta≥53°C) ∆IF / °C -0.7 mA / °C
Peak forward current (100µs pulse,100pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage V
Collector-base voltage V
Emitter-collector voltage V
Emitter-base voltage V
Collector current IC 50 mA
Detector
Peak collector current (10ms pulse,100pps) ICP 100 mA
Power dissipation PC 150 mW
Power dissipation derationg (Ta 25°C) ∆PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage (AC, 1min., RH 60%) (Note 1) BVS 3750 Vrms
(Ta = 25°C)
Characteristic Symbol Rating Unit
C
80 V
CEO
80 V
CBO
7 V
ECO
7 V
EBO
-55~125 °C
stg
-55~100 °C
opr
260 °C
sol
Marking Of Classification
, B, B■, GB
TLP131
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
2
2002-09-25
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 48 V
Forward current IF 16 25 mA
Collector current IC 1 10 mA
Operating temperature T
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V 10 µA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage V
Emitter-base breakdown voltage V
collector dark current I
Detector
Collector dark current I
-25 85 °C
opr
(Ta = 25°C)
V
(BR)CEOIC
V
(BR)ECOIE
(BR)CBOIC
(BR)EBOIE
CEO
CER
= 0.5mA 80 V
= 0.1mA 7 V
= 0.1mA 80 V
= 0.1mA 7 V
VCE = 48V 10 100 nA
V
= 48V,Ta = 85°C 2 50 µA
CE
= 48V,Ta = 85°C
V
CE
R
= 1M
BE
TLP131
0.5 10 µA
Collector dark current I
DC forward current gain hFE VCE = 5V,IC = 0.5mA 400
Capacitance (collector to emitter) CCE V = 0, f = 1MHz 10 pF
VCB = 10V 0.1 nA
CBO
Coupled Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Current transfer ratio IC / I
Saturated CTR IC / I
Base photo-current IPB IF = 5mA,VCB = 5V 10 µA
Collector-emitter saturation voltage
Off-state collector current I
(Ta = 25°C)
F
F (sat)
V
CE (sat)
IF = 0.7mA, VCE = 48 V 1 10 µA
C (off)
IF = 5 mA, VCE = 5 V
Rank GB
IF = 1 mA, VCE = 0.4 V
Rank GB
IC = 2.4 mA, IF = 8 mA 0.4
IC = 0.2 mA, IF = 1 mA
Rank GB
50 600
100 600
60
30
0.2
0.4
%
%
V
3
2002-09-25
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