TOSHIBA TLP124 Technical data

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TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP124
Office Machine
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP124 is a small outline coupler, suitable for surface mount assembly. TLP124 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode.
Collectoremitter voltage: 80 V min.
Current transfer ratio: 100% min.
Rank BV: 200% min.
Isolation voltage: 3750Vrms min.
UL recognized: UL1577, file No. E67349
Pin Configurations
(top view)
TLP124
Unit in mm
TOSHIBA 11−4C1
Weight: 0.09g
1
3
1 : Anode 3 : Cathode 4 : Emitter 6 : Collector
6
4
1
2007-10-01
Current Transfer Ratio
TLP124
Current Transfer Ratio (min.)
Classification
V
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, Blank
Ta = 25°C Ta = 25~75°C
= 1mA
I
F
= 0.5V
CE
I
= 0.5mA
F
= 1.5V
V
CE
I
F
V
CE
= 1mA
= 0.5V
Marking Of
Classification
(Note) Application type name for certification test, please use standard product type name, i. e.
TLP124 (BV): TLP124
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating ΔIF / °C 0.7 (Ta 53°C) mA / °C
Peak forward current (100μs pulse, 100pps)
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collectoremitter voltage V
Emittercollector voltage V
Collector current IC 50 mA
Peak collector current (10ms pulse, 100pps)
Detector
Power dissipation PC 150 mW
Power dissipation derating (Ta 25°C)
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25°C)
Isolation voltage (AC, 1min., R.H. 60%) (Note 1)
(Ta = 25°C)
1 A
I
FP
CEO
ECO
100 mA
I
CP
/ °C −1.5 mA / °C
ΔP
C
stg
opr
sol
/ °C 2.0 mW / °C
ΔP
T
BV
S
80 V
7 V
55~125 °C
55~100 °C
260 °C
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
2
2007-10-01
TLP124
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 48 V
Forward current IF 1.6 20 mA
Collector current IC 1 10 mA
Operating temperature T
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse Current IR VR = 5 V 10 μA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Collectoremitter breakdown voltage
Emittercollector breakdown voltage
Detector
Collector dark current ID
Capacitance collector to emitter CCE V = 0, f = 1 MHz 12 pF
V
(BR) CEO
V
(BR) ECO
Coupled Electrical Characteristics
25
opr
(Ta = 25°C)
IC = 0.5 mA 80 V
IE = 0.1 mA 7 V
VCE = 48 V 10 100 nA
= 48 V, Ta = 85°C 2 50 μA
V
CE
(Ta = 25°C)
75 °C
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Current transfer ratio IC / I
Low input CTR IC / I
Collectoremitter saturation voltage
Offstate collector current I
V
CE (sat)
C(off)
Coupled Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Current transfer ratio IC / I
Low input CTR IC / I
IF = 1mA, VCE = 0.5 V
F
F (low)
IF = 0.5 mA, VCE = 1.5 V
IC = 0.5 mA, IF = 1 mA 0.4
IC = 1 mA, IF = 1 mA
VF = 0.7V, VCE = 48 V 10 μA
(Ta = −25~75°C)
IF = 1mA, VCE = 0.5 V
F
F (low)
IF = 0.5 mA, VCE = 1.5 V
Rank BV
Rank BV
Rank BV
Rank BV
Rank BV
100 1200
200 1200
50
100
0.2
0.4
50 %
100 %
50 %
100 %
%
%
V
3
2007-10-01
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