TOSHIBA TLP120 Technical data

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TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP120

Programmable Controllers

AC / DC−Input Module

Telecommunication

The TOSHIBA mini flat coupler TLP120 is a small outline coupler,
suitable for surface mount assembly.
TLP120 consists of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.

l Collector−emitter voltage: 80 V (min.)
l Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

l Isolation voltage: 3750Vrms (min.)
l UL recognized: UL1577, file no. E67349

Pin Configurations

(top view)

TLP120

Unit in mm

TOSHIBA 11−4C1

Weight: 0.09 g

1

3

1： Anode

Cathode

3： Cathode
Anode
4： Emitter
6： Collector

6

4

1

2002-09-25

TLP120

Maximum Ratings

Characteristic Symbol Rating Unit

Forward current I

Forward current derating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C

LED

Pulse forward current IFP 1 (100µs pulse, 100pps) A

Junction temperature Tj 125 °C

Collector-emitter voltage V

Emitter-collector voltage V

Collector current IC 50 mA

Collector power dissipation PC 150 mW

Detector

Collector power dissipation
derating (Ta ≥ 25°C)

Junction temperature Tj 125 °C

Storage temperature range T

Operating temperature range T

Lead soldering temperature T

Total package power dissipation PT 200 mW

Total package power dissipation
derating (Ta ≥25°C)

Isolation voltage (Note 1) BVS 3750 (AC, 1min., R.H. ≤ 60%) Vrms

(Ta = 25°C)

50 mA

F(RMS)

80 V

CEO

7 V

ECO

∆P

/ °C -1.5 mW / °C

C

-55~125 °C

stg

-55~100 °C

opr

260 (10s) °C

sol

∆P

/ °C -2.0 mW / °C

T

(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 48 V

Forward current I

Collector current IC ― 1 10 mA

Operating temperature T

― 16 20 mA

F(RMS)

-25 ― 85 °C

opr

2

2002-09-25

TLP120

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = ±10 mA 1.0 1.15 1.3 V

LED

Capacitance CT V = 0, f = 1 MHz — 60 — pF

Collector-emitter
breakdown voltage

Emitter-collector
breakdown voltage

Detector

Collector dark current I

Capacitance
(collector to emitter)

Coupled Electrical Characteristics

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

Current transfer ratio IC / I

Saturated CTR IC / I

Collector-emitter
saturation voltage

Off-state collector current I

CTR symmetry I

Isolation Characteristics

(Ta = 25°C)

V

(BR)CEO

V

(BR)ECO

CEO

C

CE

(Ta = 25°C)

F (sat)

V

CE (sat)

C(off)

C (ratio)

(Ta = 25°C)

IC = 0.5 mA 80 — — V

IE = 0.1 mA 7 — — V

VCE = 48 V — 10 100 nA

V

CE

V = 0, f = 1 MHz — 10 — pF

= 48 V, Ta = 85°C — 2 50 µA

IF = ±5 mA, VCE = 5 V

F

IF = ±1 mA, VCE = 0.4 V

IC = 2.4 mA, IF = ±8 mA — — 0.4

IC = 0.2 mA, IF = ±1 mA

VF = ± 0.7V, VCE = 48 V — 1 10 µA

I

(IF = -5mA) / IC (IF = 5mA) 0.33 1 3 —

C

Rank GB

Rank GB

Rank GB

50 — 600

100 — 600

— 60 —

30 — —

— 0.2 —

— — 0.4

%

%

V

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
(input to output)

Isolation resistance R

Isolation voltage BV

C

VS = 0, f = 1 MHz — 0.8 — pF

S

10

14

VS = 500 V, R.H. ≤ 60% 5×10

S

AC, 1 minute 3750 — —

AC, 1 second, in oil — 10000 —

S

DC, 1 minute, in oil — 10000 — V

10

— Ω

V

rms

dc

3

2002-09-25