TOSHIBA TLP112 Technical data

查询TLP112供应商
TOSHIBA Photocoupler GaAAs Ired & Photo−IC
TLP112
Digital Logic Isolation
Switching Power Supply Feedback Control
Transistor Invertor
The TOSHIBA mini flat coupler TLP112 is a small outline coupler, suitable for surface mount assembly. TLP112 consists of a GaAAs light emitting diode, optically coupled to a high speed detector of one chip photodiode
l Isolation voltage: 2500 Vrms (min.) l Switching speed: t
(RL = 4.1 kΩ)
l TTL compatible l UL recognized: UL1577, file no. E67349
Pin Configuration
= 0.8µs, t
pHL
(top vi ew)
transistor.
= 2 µs(max.)
pLH
TOSHIBA 11−4C2
Weight: 0.09g
TLP112
Unit in mm
1
3
Schematic
IF
1
V
F
3
6
5
4
1 : ANODE 3 : CATHODE 4 : EMITTER (GND) 5 : COLLECTOR (OUTPUT)
6 : V
CC
ICC
VCC
I
6
O
V
O
5
GND
4
1
2002-09-25
TLP112
Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current (Note 1) I
Pulse forward current (Note 2) I
Peak transient forward current (Note 3)
LED
Reverse voltage V
Diode power dissipation (Note 4) P
Output current I
Peak output current I
Supply voltage V
Detector
Output voltage V
Output power dissipation (Note 5) P
Operating temperature range T
Storage temperature range T
Lead soldering temperature(10s) T
Isolation voltage (AC, 1 min., R.H 60%, Note 6)
I
FPT
BV
FP
OP
CC
opr
stg
sol
F
R
D
O
O
o
S
25 mA
50 mA
1 A
5 V
45 mW
8 mA
16 mA
-0.5~15 V
-0.5~15 V
100 mW
-55~100 °C
-55~125 °C
260 °C
2500 Vrms
(Note 1) Derate 0.8 mA / °C above 70°C. (Note 2) 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width 1µs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C.
2
2002-09-25
TLP112
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
Forward voltage temperature coefficient
Reverse current I
LED
Capacitance between terminals
High level output current
Detector
High level supply current
Current transfer ratio IO / IF
Low level output voltage
Coupled
Isolation resistance RS
Stray capacitance between input to output
Switching Characteristics
(Ta = 25°C)
F
V
/ Ta IF = 16mA -2 mV / °C
F
R
C
T
I
OH (1)
I
OH (2)
I
OH
I
CCH
V
OL
C
S
(Ta = 25°C)
IF = 16mA 1.65 1.85 V
VR = 5V 10 µA
VF = 0, f = 1MHz 45 pF
IF = 0mA, VCC = VO = 5.5V 3 500 nA
IF = 0mA, VCC = VO = 15V 5
IF = 0mA, VCC = VO = 15V Ta = 70°C
IF = 0mA, VCC = 15V 0.01 1 µA
=16mA, VCC = 4.5V
I
F
V
= 0.4V
O
= 16 mA, VCC = 4.5V
I
F
I
= 1.1mA
O
R.H. 60%
= 500V DC (Note 6)
V
S
VS = 0, f = 1MHz (Note 6) 0.8 pF
50
10 %
0.4 V
10 1014
5×10
µA
Test
Characteristic Symbol
Cir-
Test Condition Min. Typ. Max. Unit
cuit
Propagation delay time (HL)
Propagation delay time (LH)
Common mode transient immunity at high output level Common mode transient immunity at low output level
t
pHL
t
1
pLH
CM
H
CM
L
= 0→16mA
I
F
1
V
= 5V, RL= 4.1k
CC
= 16→0mA
I
F
= 5V, RL= 4.1k
V
CC
I
= 0mA, VCM = 200V
F
2
RL = 4.1k
I
=16mA, VCM = 200V
F
2
RL = 4.1k
p-p
p-p
(Note 6) Device considered a two-terminal device: Pins 1 and 3 shorted together and Pin 4, 5 and 6 shorted together. (Note 7) Maximum electrostatic discharge voltage for any pins: 100V (C=200pF, R=0)
0.8 µs
2.0 µs
1500 V / µs
-1500 V / µs
3
2002-09-25
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