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查询TLP112供应商
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP112
Digital Logic Isolation
Line Receiver
Switching Power Supply Feedback Control
Transistor Invertor
The TOSHIBA mini flat coupler TLP112 is a small outline coupler,
suitable for surface mount assembly.
TLP112 consists of a GaAℓAs light emitting diode, optically coupled to a
high speed detector of one chip photodiode
l Isolation voltage: 2500 Vrms (min.)
l Switching speed: t
(RL = 4.1 kΩ)
l TTL compatible
l UL recognized: UL1577, file no. E67349
Pin Configuration
= 0.8µs, t
pHL
(top vi ew)
−transistor.
= 2 µs(max.)
pLH
TOSHIBA 11−4C2
Weight: 0.09g
TLP112
Unit in mm
1
3
Schematic
IF
1
V
F
3
6
5
4
1 : ANODE
3 : CATHODE
4 : EMITTER (GND)
5 : COLLECTOR (OUTPUT)
6 : V
CC
ICC
VCC
I
6
O
V
O
5
GND
4
1
2002-09-25
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TLP112
Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current (Note 1) I
Pulse forward current (Note 2) I
Peak transient forward
current (Note 3)
LED
Reverse voltage V
Diode power dissipation (Note 4) P
Output current I
Peak output current I
Supply voltage V
Detector
Output voltage V
Output power dissipation (Note 5) P
Operating temperature range T
Storage temperature range T
Lead soldering temperature(10s) T
Isolation voltage
(AC, 1 min., R.H ≤ 60%, Note 6)
I
FPT
BV
FP
OP
CC
opr
stg
sol
F
R
D
O
O
o
S
25 mA
50 mA
1 A
5 V
45 mW
8 mA
16 mA
-0.5~15 V
-0.5~15 V
100 mW
-55~100 °C
-55~125 °C
260 °C
2500 Vrms
(Note 1) Derate 0.8 mA / °C above 70°C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width ≤ 1µs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
2
2002-09-25
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TLP112
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
Forward voltage
temperature coefficient
Reverse current I
LED
Capacitance between
terminals
High level output
current
Detector
High level supply
current
Current transfer ratio IO / IF
Low level output
voltage
Coupled
Isolation resistance RS
Stray capacitance
between input to output
Switching Characteristics
(Ta = 25°C)
F
∆V
/ ∆Ta IF = 16mA ― -2 ― mV / °C
F
R
C
T
I
OH (1)
I
OH (2)
I
OH
I
CCH
V
OL
C
S
(Ta = 25°C)
IF = 16mA ― 1.65 1.85 V
VR = 5V ― ― 10 µA
VF = 0, f = 1MHz ― 45 ― pF
IF = 0mA, VCC = VO = 5.5V ― 3 500 nA
IF = 0mA, VCC = VO = 15V ― ― 5
IF = 0mA, VCC = VO = 15V
Ta = 70°C
IF = 0mA, VCC = 15V ― 0.01 1 µA
=16mA, VCC = 4.5V
I
F
V
= 0.4V
O
= 16 mA, VCC = 4.5V
I
F
I
= 1.1mA
O
R.H. ≤ 60%
= 500V DC (Note 6)
V
S
VS = 0, f = 1MHz (Note 6) ― 0.8 ― pF
― ― 50
10 ― ― %
― ― 0.4 V
10 1014
5×10
― Ω
µA
Test
Characteristic Symbol
Cir-
Test Condition Min. Typ. Max. Unit
cuit
Propagation delay time
(H→L)
Propagation delay time
(L→H)
Common mode transient
immunity at high output
level
Common mode transient
immunity at low output
level
t
pHL
t
1
pLH
CM
H
CM
L
= 0→16mA
I
F
1
V
= 5V, RL= 4.1kΩ
CC
= 16→0mA
I
F
= 5V, RL= 4.1kΩ
V
CC
I
= 0mA, VCM = 200V
F
2
RL = 4.1kΩ
I
=16mA, VCM = 200V
F
2
RL = 4.1kΩ
p-p
p-p
(Note 6) Device considered a two-terminal device: Pins 1 and 3 shorted together and Pin 4,
5 and 6 shorted together.
(Note 7) Maximum electrostatic discharge voltage for any pins: 100V (C=200pF, R=0)
― ― 0.8 µs
― ― 2.0 µs
― 1500 ― V / µs
-1500 ― V / µs
―
3
2002-09-25