TOSHIBA TLGU53T, TLGU53C, TLGU53D, TLPGU53T, TLPGU53C Technical data

...
查询TLGU53C供应商
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
TOSHIBA InGaAP LED
TLGU53T,TLGU53C,TLGU53D,
TLPGU53T,TLPGU53C,TLPGU53D
Panel Circuit Indicator
· InGaAP technology
· All plastic mold type
TLGU53T, TLPGU53T : Transparent lens TLGU53C, TLPGU53C : Colored, transparent lens TLGU53D, TLPGU53D : Colored, diffused lens
· Colors: green, pure green
· High intensity light emission
· Excellent low current light output
· Fast response time, capable of pulse operation
· Applications: message signbord, safety equipment, indicator
Line-up
Unit: mm
Product Name Color Material
TLGU53T Green
TLGU53C Green
TLGU53D Green
TLPGU53T Pure green
TLPGU53C Pure green
TLPGU53D Pure green
Maximum Ratings
Product Name
TLGU53T 30 4 72
TLGU53C 30 4 72
TLGU53D 30 4 72
TLPGU53T 30 4 72
TLPGU53C 30 4 72
TLPGU53D 30 4 72
(Ta ==== 25°C)
Forward Current
I
(mA)
F
Reverse Voltage
VR (V)
PInGaAl
Power Dissipation
PD (mW)
JEDEC
JEITA
TOSHIBA 4-4E1A
Weight: 0.14 g
Operating
Temperature
(°C)
T
opr
-40~100 -40~120
Storage
Temperature
T
(°C)
stg
1
2002-01-17
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
Electrical and Optical Characteristics
Product Name
TLGU53T 571 (574) 17 20 47.6 170 20 2.1 2.4 20 50 4
TLGU53C 571 (574) 17 20 47.6 150 20 2.1 2.4 20 50 4
TLGU53D 571 (574) 17 20 27.2 80 20 2.1 2.4 20 50 4
TLPGU53T 558 (562) 14 20 27.2 80 20 2.1 2.4 20 50 4
TLPGU53C 558 (562) 14 20 27.2 70 20 2.1 2.4 20 50 4
TLPGU53D 558 (562) 14 20 15.3 40 20 2.1 2.4 20 50 4
Unit nm mA mcd mA V mA mA V
Typ. Emission Wavelength
l
lP Dl IF Min Typ. IF Typ. Max IF Max VR
d
(Ta ==== 25°C)
Luminous Intensity
Forward Voltage
I
V
VF
Reverse Current
IR
Precautions
Please be careful of the following:
· Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TLGU53T
100
50
30
(mA)
F
10
Ta = 25°C
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
– IF
500
Ta = 25°C
100
(mcd)
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
Forward voltage VF (V)
2.0
2.3
10
Luminous intensity I
1
3 5 30 50
Forward current IF (mA)
10 1
100
10
5
V
3
I
V
– Tc
1
0.5
0.3
Relative luminous intensity I
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
0.8
0.6
0.4
Relative luminous intensity
0.2
Ta = 25°C
0.1 20 -20
0 40 60
Case temperature Tc (°C)
80
100
0 540
560 580 600
Wavelength l (nm)
620
80°
70°
60°
50°
40°
Radiation pattern
10°
20°
30°
I
– Ta
40
F
Ta = 25°C
(mA)
30
F
0°
10°
20°
30°
40°
50°
60°
70°
1.00.80.6 0.4 0.2 0
80°
90° 90°
20
10
Allowable forward current I
0
3
400
20 60 80 100
Ambient temperature Ta (°C)
2002-01-17
120
TLGU53C
100
50
30
(mA)
F
10
Ta = 25°C
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
– IF
500
Ta = 25°C
100
(mcd)
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
Forward voltage VF (V)
2.0
2.3
10
Luminous intensity I
1
3 5 30 50
Forward current IF (mA)
10 1
100
10
5
V
3
I
V
– Tc
1
0.5
0.3
Relative luminous intensity I
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
0.8
0.6
0.4
Relative luminous intensity
0.2
Ta = 25°C
0.1 20 -20
0 40 60
Case temperature Tc (°C)
80
100
0
540
560 580 600
Wavelength l (nm)
620
80°
70°
60°
50°
30°
40°
Radiation pattern
0°
20°
10°
10°
Ta = 25°C
20°
30°
40°
50°
60°
1.00.80.6 0.4 0.2 0
70°
80°
I
– Ta
40
(mA)
30
F
20
10
Allowable forward current I
90° 90°
0
20 60 80 100
Ambient temperature Ta (°C)
4
F
400
120
2002-01-17
TLGU53D
100
50
30
(mA)
F
10
Ta = 25°C
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
– IF
500
Ta = 25°C
100
(mcd)
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
Forward voltage VF (V)
2.0
2.3
10
Luminous intensity I
1
3 5 30 50
Forward current IF (mA)
10 1
100
10
5
V
3
I
V
– Tc
1
0.5
0.3
Relative luminous intensity I
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
0.8
0.6
0.4
Relative luminous intensity
0.2
Ta = 25°C
0.1 20 -20
0 40 60
Case temperature Tc (°C)
80
100
0
540
560 580 600
Wavelength l (nm)
620
80°
70°
60°
50°
40°
Radiation pattern
10°
20°
30°
I
– Ta
40
F
Ta = 25°C
(mA)
30
F
0°
10°
20°
30°
40°
50°
60°
70°
1.00.80.6 0.4 0.2 0
80°
90° 90°
20
10
Allowable forward current I
0
5
400
20 60 80 100
Ambient temperature Ta (°C)
2002-01-17
120
TLPGU53T
100
Ta = 25°C
50
30
(mA)
F
10
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
– IF
1000
Ta = 25°C
(mcd)
100
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
2.0
Forward voltage VF (V)
– Tc
I
10
5
V
3
1
0.5
0.3
Relative luminous intensity I
V
2.3
10
Luminous intensity I
1
3 5 30 50
10 1
100
Forward current IF (mA)
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
Relative luminous intensity
0.2
80°
0.1
70°
60°
20 -20
0 40 60
Case temperature Tc (°C)
Radiation pattern
0°
50°
40°
30°
20°
10°
10°
80
Ta = 25°C
20°
30°
40°
50°
100
60°
70°
1.00.80.6 0.4 0.2 0
80°
90° 90°
0
520
540 560 580
600
Wavelength l (nm)
I
– Ta
40
(mA)
30
F
20
10
Allowable forward current I
0
20 60 80 100
Ambient temperature Ta (°C)
F
400
120
6
2002-01-17
TLPGU53C
100
Ta = 25°C
50
30
(mA)
F
10
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
– IF
1000
Ta = 25°C
(mcd)
100
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
Forward voltage VF (V)
2.0
2.3
10
Luminous intensity I
1
3 5 30 50
Forward current IF (mA)
10 1
100
10
5
V
3
1
0.5
0.3
Relative luminous intensity I
I
V
– Tc
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
0.8
0.6
0.4
Relative luminous intensity
0.2
Ta = 25°C
0.1 20 -20
0 40 60
Case temperature Tc (°C)
80
100
0 520
540 560 580
Wavelength l (nm)
600
Radiation pattern
Ta = 25°C
I
– Ta
40
F
60°
70°
80°
30°
40°
50°
20°
10°
10°
20°
30°
40°
50°
60°
70°
1.00.80.6 0.4 0.2 0
80°
90° 90°
0°
(mA)
30
F
20
10
Allowable forward current I
0
400
20 60 80 100
Ambient temperature Ta (°C)
120
7
2002-01-17
TLPGU53D
100
(mA)
F
Forward current I
V
Ta = 25°C
50
30
10
5
3
1
1.7 2.1
10
5
3
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
– VF
I
F
I
V
2.0
– Tc
1.8 1.9 2.2
Forward voltage VF (V)
2.3
I
– IF
500
Ta = 25°C
100
(mcd)
V
V
10
Luminous intensity I
1
0.5 3 5 30 50
Forward current IF (mA)
10 1
100
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
1
0.5
0.3
Relative luminous intensity I
0.1 20 -20
0 40 60
Case temperature Tc (°C)
80
100
0.4
Relative luminous intensity
0.2
0
520
540 560 580
Wavelength l (nm)
600
80°
70°
60°
50°
40°
Radiation pattern
10°
20°
30°
Ta = 25°C
0°
10°
20°
30°
40°
50°
60°
70°
1.00.80.6 0.4 0.2 0
80°
90° 90°
I
– Ta
40
(mA)
30
F
20
10
Allowable forward current I
0
20 60 80 100
Ambient temperature Ta (°C)
F
400
120
8
2002-01-17
TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
000707EAC
· The information contained herein is subject to change without notice.
9
2002-01-17
Loading...