TOSHIBA TLBD1100B, TLEGD1100B Technical data

TL(BD,EGD)1100B(T11)

TOSHIBA LED Lamps

TLBD1100B(T11), TLEGD1100B(T11)

Panel Circuit Indicator

• Surface-mount devices

• 3.2 (L) × 2.8 (W) × 1.9 (H) mm

• Flat-top type

• InGaN LEDs

• High luminous intensity

• Low drive current, high-intensity light emission

• Colors: Blue λd=470nm(typ)
Green λd=528nm(typ)

• Pb free reflow soldering is possible

• Applications: automotive use, message signboards, backlighting

etc.

• Standard embossed tape packing: T11 (2000/reel)
8-mm tape reel

Color and Material

Product Name Color Material

Unit: mm

JEDEC ―

JEITA ―

TLBD1100B Blue

TLEGD1100B Green

Maximum Ratings

Product Name

TLBD1100B

TLEGD1100B

(Ta = 25°C)

Forward Current

I

F

Please see Note 1

Note 1: Forward current derating

40

(mA)

F

30

20

InGaN

TOSHIBA 4-3R1

Weight: 0.035 g (typ.)



(mA)

30 4 120 −40~100 −40~100

Reverse Voltage

I

– Ta

F

V

(V)

R

Power Dissipation

PD (mW)

Operation

Temperature

T

(°C)

opr

Storage

Temperature

T

(°C)

stg

10

Allowable forward current I

0

0 80 60 20 100

Ambient temperature Ta (°C)

40

1

2006-06-01

TL(BD,EGD)1100B(T11)

Electrical Characteristics

Product Name

TLBD1100B 2.7 3.3 4.0

TLEGD1100B 2.7 3.3 4.0

Unit V mA µA V

Forward Voltage VF

Min Typ. Max I

(Ta = 25°C)

Reverse Current

I

R

Max VR

F

20 10 4

Optical Characteristics–1

Product Name

Min Typ. Max I

TLBD1100B 40 70 200 20 PA / QA / RA

TLEGD1100B 100 200 500 20 RA / SA / TA

Unit mcd mA

(Ta = 25°C)

Luminous Intensity IV

Available Iv rank (Note 2)

F

Note 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility.

Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.

Iv rank

Rank symbol Min Max

PA 40 80

QA 63 125

RA 100 200

SA 160 320

TA 250 500

Unit mcd mcd

Optical Characteristics–2

(Ta = 25°C)

Emission Spectrum

Product Name

TLBD1100B ⎯ 468 ⎯ 22 463 470 477

TLEGD1100B ⎯ 523 ⎯ 35 518 528 538

Unit nm nm nm mA

Peak Emission
Wavelength λ

Min Typ. Max Typ. Min Typ. Max

p

∆λ Dominant Wavelength λ

d

I

F

20

Note 3: Caution

ESD withstand voltage according to MIL STD 883D, Method 3015.7 : ≥1000V

When handling this LED, take the following measures to prevent the LED from being damaged or otherwise
adversely affected.

1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor.

2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap is
good for this purpose.

3) Ground all tools including soldering irons.

2

2006-06-01

TLBD1100B

(typ.)

(typ.)

(typ.)

(typ.)

(typ.)

TL(BD,EGD)1100B(T11)

100

Ta = 25°C

I

F

– VF

30

(mA)

F

10

I

– IF

300

Ta = 25°C

100

(mcd)

V

50

30

V

3

Forward current I

1

2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0

Forward voltage VF

10

Luminous intensity I

5

3

1 50

3 5 10 30 100

Forward current IF (mA)

10

5

V

3

I

V

– Tc

Relative luminosity I

1

0.5

0.3

1.0

Relative luminosity - λ

0.8

0.6

IF = 20 mA
Ta = 25°C

0.4

Relative luminosity

0.2

0.1

−20 0 40

Case temperature Tc (°C)

20

100

80 60

0

400 600

360 560 520 440

480

Wavelength λ (nm)

Radiation pattern

Ta = 25°C

80°

70°

60°

50°

40°

30°

20°

10°

0°

10°

20°

30°

40°

50°

60°

50

80°

90° 90°

1.00.80.6 0.4 0.2 0

3

2006-06-01