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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
2
TK11A50D
TK11A50D
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
• High forward transfer admittance: |Yfs| = 5.5 S (typ.)
• Low leakage current: I
• Enhancement mode: V
= 10 μA (max) (VDS = 500 V)
DSS
= 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
th
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Gate-source voltage V
DC (Note 1) I
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 11 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range T
Pulse (t = 1 ms)
(Note 1)
= 0.45 Ω (typ.)
(Ta = 25°C)
DSS
GSS
D
I
DP
P
D
E
AS
stg
500 V
±30 V
11
A
44
45 W
264 mJ
−55 to 150 °C
Unit: mm
Ф3.2 ± 0.2
1.14 ± 0.15
Ф0.2
0.69 ± 0.15
M
A
2.54
0.64 ± 0.15
1: Gate
2: Drain
3: Source
10 ± 0.3
1 2 3
A
2.54
2.7 ± 0.
3.0
3.9
15.0 ± 0.3 13 ± 0.5
2.8 MAX.
2.6 ± 0.1
4.5 ± 0.2
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to ambient R
2.78 °C/W
th (ch-c)
62.5 °C/W
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 3.7 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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TK11A50D
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-off current I
Drain-source breakdown voltage V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON-resistance R
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5.5 A 1.4 5.5 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯ 25 ⎯
Turn-on time ton ⎯ 60 ⎯
Switching time
Fall time tf ⎯ 12 ⎯
Turn-off time t
Total gate charge Qg ⎯
Gate-source charge Qgs ⎯
Gate-drain charge Qgd
(Ta = 25°C)
(BR) DSSID
DS (ON)
VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA
GSS
VDS = 500 V, VGS = 0 V ⎯ ⎯ 10 μA
DSS
= 10 mA, VGS = 0 V 500 ⎯ ⎯ V
VGS = 10 V, ID = 5.5 A ⎯ 0.45 0.6 Ω
⎯ 1200 ⎯
iss
V
⎯ 6 ⎯
rss
oss
off
= 25 V, VGS = 0 V, f = 1 MHz
DS
10 V
V
GS
0 V
50 Ω
Duty ≤ 1%, t
V
≈ 400 V, VGS = 10 V, ID = 11 A
DD
I
= 10 μs
w
= 5.5 A V
D
V
DD
OUT
RL = 36 Ω
≈ 200 V
⎯ 120 ⎯
⎯ 100
24
16
⎯
⎯
⎯
⎯
8
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
I
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1) I
Forward voltage (diode) V
Reverse recovery time trr ⎯ 1300 ⎯ ns
Reverse recovery charge Qrr
⎯ ⎯ ⎯ 11 A
DR
⎯ ⎯ ⎯ 44 A
DRP
IDR = 11 A, VGS = 0 V ⎯ ⎯ −1.7
DSF
I
= 11 A, VGS = 0 V,
DR
/dt = 100 A/μs
dI
DR
⎯ 12 ⎯ μC
Marking
K11A50D
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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TK11A50D
I
– VDS
10
Common source
Tc = 25°C
Pulse Test
8
(A)
D
6
4
Drain current I
2
0
0 2 4 6 8 10
10
7
6.7
8
VGS = 5 V
6.5
5.5
6
Drain-source voltage VDS (V)
I
– VGS
D
20
Common source
VDS = 20 V
Pulse Test
16
(A)
D
12
8
Drain current I
4
D
100
25
Tc = −55 °C
20
16
(A)
D
12
10
8
Drain current I
4
0
0 40
10
Drain-source voltage VDS (V)
10
8
(V)
DS
6
4
2
Drain-source voltage V
8
I
D
V
DS
– VDS
7.5
20
– VGS
7.3
7
Common source
Tc = 25°C
Pulse Test
6.5
6
VGS = 5.5 V
30
Common source
Tc = 25°C
Pulse Test
ID = 11 A
5.5
2.8
0
0 2 4 6 8
Gate-source voltage VGS (V)
100
Common source
VDS = 10 V
| (S)
Pulse Test
fs
10
1
Forward transfer admittance |Y
0.1
0.1 1
Tc = −55 °C
|Y
| – ID
fs
25
100
Drain current ID (A)
10
0
4 8 12 16 20
0
Gate-source voltage VGS (V)
10
Common source
Tc = 25°C
Pulse Test
R
DS (ON)
– ID
(Ω)
1
DS(ON)
R
VGS = 10 V
Drain-source ON-resistance
0.1
100 10
0.1 1 100
10
Drain current ID (A)
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TK11A50D
Drain-source ON-resistance
1.6
1.2
(Ω)
0.8
DS (ON)
R
0.4
10000
1000
2
Common source
VGS = 10 V
Pulse Test
0
R
Case temperature Tc (°C)
DS (ON)
− Tc
11
5.5
ID = 2.8 A
Capacitance – V
DS
I
− VDS
100
Common source
Tc = 25°C
Pulse Test
DR
(A)
DR
10
1
10
−0.3
5
3
VGS = 0 V
1
−0.6
−0.9
−1.2
−1.5
Drain reverse current I
0.1
160 −40 0 40 80 120 −80
0
Drain-source voltage VDS (V)
V
− Tc
th
5
C
iss
4
(V)
th
C
100
Capacitance C (pF)
10
Common source
V
= 0 V
GS
f =1MHz
Tc = 25°C
1
0.1
1 10 100
oss
C
rss
Drain-source voltage VDS (V)
P
− Tc
80
(W)
60
D
40
20
Drain power dissipation P
D
3
2
Common source
1
Gate threshold voltage V
VDS = 10 V
ID = 1mA
Pulse Test
0
−80 −40 0 40 80 120 160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
V
DS
VDD = 100 V
V
GS
200
400
Common source
ID = 11 A
Tc = 25°C
Pulse Test
(V)
Drain-source voltage V
400
DS
300
200
100
20
16
12
8
4
(V)
GS
Gate-source voltage V
0
0 40 80 120 160
Case temperature Tc (°C)
0
0 8 16
24
32
40
0
Total gate charge Qg (nC)
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r
– tw
10
1
th (ch-c)
/R
th (t)
r
0.01
Normalized transient thermal impedance
0.001
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
10μ 100μ 1m 10m 100m 1 10
SINGLE PULSE
th
P
DM
t
T
Duty = t/T
R
= 2.78 °C/W
th (ch-c)
Pulse width tw (s)
TK11A50D
100
ID max (pulse) *
ID max (continuous)
10
(A)
1
D
0.1
Drain current I
0.01
* Single pulse Tc=25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
SAFE OPERATING AREA
1 ms *
DC operation
Tc = 25°C
V
max
DSS
10 1000100
Drain-source voltage VDS (V)
100 μs *
– Tch
E
300
240
AS
(mJ)
AS
180
120
60
Avalanche energy E
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
B
V
15
−15 V
VDSS
I
AR
V
V
DD
DS
RG = 25 Ω
= 90 V, L = 3.7 mH
V
DD
5
Test circuit Waveform
⎛
1
2
⎜
⋅⋅⋅=
Ε
AS
IL
⎜
2
⎝
B
VDSS
−
B
VDSS
V
DD
2010-06-03
⎞
⎟
⎟
⎠
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TK11A50D
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications.
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
•
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
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