TOSHIBA TIM7785-8L Technical data
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∆
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°
TOSHIBA
MICROWAVE POWER GaAs FET
Low Distortion Internally Matched Power GaAs FETs (C-Band)
Features
• Low intermodulation distortion
-IM
= -44 dBc at Po = 28 dBm,
3
- Single carrier level
• High power
-P
= 39 dBm at 7.7 GHz to 8.5 GHz
1dB
• High gain
-G
• Broad band internally matched
• Hermetically sealed package
RF Performance Specifications (Ta = 25 ° C)
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current I
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation Distortion IM
Drain Current I
Channel-Temperature Rise
= 5.0 dB at 7.7 GHz to 8.5 GHz
1dB
Characteristics Symbol Condition Unit Min. Typ. Max
P
G
1dB
1dB
DS1
V
= 10V
DS
f = 7.7 ~ 8.5 GHz
dBm 38.0 39.0 –
dB 4.0 5.0 –
A – 2.3 2.8
GdB––
η
add
DS2
T
3
ch
Note 1
V
xI
xR
DS
th
(c-c)
DS
% – 24 –
dBc -41 -44 –
A – 2.3 2.8
C– –80
TIM7785-8L
±
0.6
Electrical Characteristics (Ta = 25 ° C)
Characteristic Symbol Condition Unit Min. Typ. Max
V
= 3V
Trans-conductance gm
Pinch-off V oltage V
Saturated Drain Current I
Gate-Source Breakdown Voltage V
Thermal Resistance R
Note 1: 2 tone Test Pout = 28dBm Single Carrier Level.
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
GSoff
DSS
GSO
th (c-c)
DS
I
= 3.0A
DS
V
= 3V
DS
I
= 40mA
DS
V
= 3V
DS
V
= 0V
GS
I
= -120 µ AV -5 – –
GS
Channel
to case
mS – 1800 –
V -2 -3.5 -5.0
A – 5.8 7.5
C/W – 2.3 3.5
MW51080196 1/5
TIM7785-8L
Absolute Maximum Ratings (Ta = 25 ° C)
Characteristic Symbol Unit Rating
˚
˚
Drain-Source Voltage V
Gate-Source Voltage V
Drain Current I
Total Power Dissipation (T
= 25 ° C) P
c
Channel Temperature T
Storage Temperature T
Package Outline (2-11D1B)
DS
DS
GS
ch
stg
V 15
V -5
A 8
T
W 37.5
C 175
C -65~175
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 ° C.
2/5 MW51080196
TOSHIBA CORPORATION
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