Toshiba TD62004AP, TD62003AP Datasheet

TD62001~004P/AP/F/AF

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TD62002AP,TD62002F,TD62002AF,TD62003P,TD62003AP,TD62003F

TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P

TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF

7CH DARLINGTON SINK DRIVER

The TD62001P / AP / F / AF Series are high−voltage, high−current
darlington drivers comprised of seven NPN darlington pairs.
All units feature integral clamp diodes for switching inductive
loads.
Applications include relay, hammer, lamp and display (LED)
drivers.

FEATURES

l Output current (single output) 500 mA MAX.
l High sustaining voltage output

35 V MIN. (TD62001P / F Series)
50 V MIN. (TD62001AP / AF Series)

l Output clamp diodes
l Inputs compatible with various types of logic
l Package Type−P, AP : DIP−16 pin
l Package Type−F, AF : SOP−16 pin

TYPE

TD62001P / AP / F / AF External General Purpose

TD62002P / AP / F / AF

TD62003P / AP / F / AF 2.7 kΩ TTL, 5 V CMOS

TD62004P / AP / F / AF 10.5 kΩ 6~15 V PMOS, CMOS

PIN CONNECTION

INPUT BASE

RESISTOR

10.5−kΩ + 7 V

Zenner diode

(TOP VIEW)

DESIGNATION

14~25 V PMOS

Weight
DIP16−P−300−2.54A : 1.11 g (Typ.)
SOP16−P−225−1.27 : 0.16 g (Typ.)

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2001-06-27

TD62001~004P/AP/F/AF

SCHEMATICS

(EACH DRIVER)

TD62001P / AP / F / AF TD62002P / AP / F / AF TD62003P / AP / F / AF

TD62004P / AP / F / AF

Note: The input and output parasitic diodes cannot be used as clamp diodes.

MAXIMUM RATINGS

(Ta = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Output Sustaining
Voltage

Output Current I

Input Voltage V

Input Current I

Clamp Diode
Reverse Voltage

Clamp Diode Forward Current I

Power Dissipation

Operating
Temperature

Storage Temperature T

P, F −0.5~35

AP, AF

P, F 35

AP, AF

P 1.0

AP 1.47

F, AF

P −30~75

AP, F, AF

V

CE (SUS)

OUT

(Note 1) −0.5~30 V

IN

(Note 2) 25 mA

IN

V

R

F

P

D

T

opr

stg

−0.5~50

0.54 / 0.625

(Note 3)

−40~85

−55~150 °C

Note 1: Except TD62001P / AP / F / AF
Note 2: Only TD62001P / AP / F / AF
Note 3: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)

V

500 mA / ch

V

50

500 mA

W

°C

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2001-06-27

RECOMMENDED OPERATING CONDITIONS

(Ta = −40~85°C and Ta = −30~75°C for only Type−P)

CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT

TD62001~004P/AP/F/AF

Output Sustaining
Voltage

Output Current

Input Voltage

Input Voltage
(Output On)

Input Voltage
(Output Off)

Input Current Only TD62001 I

Voltage

Clamp Diode Forward Current I

Power Dissipation

P, F 0 ― 35

AP, AF

AP

P

F, AF

Except

TD62001P /

AP / F / AF

TD62002 14.5 ― 24

TD62003 2.8 ― 24

TD62004

TD62001 0 ― 0.6

TD62002 0 ― 7.4

TD62003 0 ― 0.7

TD62004

P, F ― ― 35 Clamp Diode Reverse

AP, AF

P ― ― 0.6

AP

AF, F

V

CE (SUS)

V

IN (ON)

V

IN (OFF)

I

OUT

V

IN

V

P

IN

F

Duty = 10% 0 ― 370

Tpw = 25 ms
7 Circuits
Ta = 85°C
T

= 120°C

j

0 ― 24 V

I

= 400 mA

OUT

h

= 800

FE

0 ― 1.0

0 ― 10 mA

R

D

― ― 50

― ― 350 mA

Ta = 85°C

Ta = 85°C (Note) ― ― 0.325

Duty = 50% 0 ― 130

Duty = 10% 0 ― 295

Duty = 50% 0 ― 95

Duty = 10% 0 ― 233

Duty = 50% 0 ― 70

0 ― 50

6.2 ― 24

― ― 0.76

V

mA /

ch

V

V

V

W

Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)

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TD62001~004P/AP/F/AF

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL

AP, AF

Output Leakage
Current

F

P

Collector−Emitter Saturation Voltage V

DC Current Transfer Ratio h

TD62002 VIN = 20 V, I

Input Current
(Output On)

TD62003 VIN = 2.4 V, I

TD62004

Input Current
(Output Off)

P I

AP, F, AF

TD62002

Input Voltage
(Output On)

TD62003

TD62004

AP, AF

Clamp Diode
Reverse Current

F

P

Clamp Diode Forward Voltage V

Input Capacitance C

P, F

Turn−On Delay

AP, AF

P, F

Turn−Off Delay

AP, AF

I

CEX

CE (sat)

FE

I

IN (ON)

I

IN (OFF)

V

IN (ON)

I

R

F

IN

t

ON

t

OFF

(Ta = 25°C unless otherwise noted)

TEST

CIR−

TEST CONDITION MIN TYP. MAX UNIT

CUIT

VCE = 50 V, Ta = 25°C ― ― 50

V

= 50 V, Ta = 85°C ― ― 100

CE

VCE = 35 V, Ta = 25°C ― ― 50

1

V

= 35 V, Ta = 85°C ― ― 100

CE

VCE = 35 V, Ta = 25°C ― ― 50

= 35 V, Ta = 75°C ― ― 100

V

CE

I

= 350 mA, IIN = 500 µA ― 1.3 1.6

OUT

2

I

= 200 mA, IIN = 350 µA ― 1.1 1.3

OUT

I

= 100 mA, IIN = 250 µA ― 0.9 1.1

OUT

2 VCE = 2 V, I

3

V

= 9.5 V, I

IN

= 500 µA, Ta = 75°C 50 65 ―

OUT

4

5

= 500 µA, Ta = 85°C 50 65 ―

I

OUT

V

= 2 V

CE

h

= 800

FE

= 350 mA 1000 ― ―

OUT

= 350 mA ― 1.1 1.7

OUT

= 350 mA ― 0.4 0.7

OUT

= 350 mA ― 0.8 1.2

OUT

I

= 350 mA ― ― 13.7

OUT

= 200 mA ― ― 11.4

I

OUT

I

= 350 mA ― ― 2.6

OUT

= 200 mA ― ― 2.0

I

OUT

I

= 350 mA ― ― 4.7

OUT

= 200 mA ― ― 4.4

I

OUT

VR = 50 V, Ta = 25°C ― ― 50

= 50 V, Ta = 85°C ― ― 100

V

R

VR = 35 V, Ta = 25°C ― ― 50

6

V

= 35 V, Ta = 85°C ― ― 100

R

VR = 35 V, Ta = 25°C ― ― 50

V

= 35 V, Ta = 75°C ― ― 100

R

7 IF = 350 mA ― ― 2.0 V

― ― 15 ― pF

= 35 V, RL = 87.5 Ω

V

OUT

C

= 15 pF

L

8

8

= 50 V, RL = 125 Ω

V

OUT

C

= 15 pF

L

= 35 V, RL = 87.5 Ω

V

OUT

C

= 15 pF

L

= 50 V, RL = 125 Ω

V

OUT

C

= 15 pF

L

― 0.1 ―

― 0.1 ―

― 0.2 ―

― 0.2 ―

µA

V

mA

µA

V

µA

µs

4

2001-06-27