TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Preliminar
T C 9 0 A 6 6 F
PAP/PIP/POP Controller for Wide-Screen TVs (PAL/NTSC)
With built-in AD and DA converters (ADC/DAC), the TC90A66F is a picture-and-picture (PAP)/picture-in-picture
(PIP)/picture-out-picture (POP) controller IC for PAL and NTSC
formats. It is used in combination with field memory, video signal
processor ICs.
The TC90A66F enables a variety of picture display functions.
The IC is optimal to provide wide-screen TVs with additional
functionality.
PAP display Half-picture left and right sides of 16:9 screen
(Motion Picture mode or Still mode selectable)
PIP display 4:3 or 16:9 aspect ratio
(Motion Picture mode or Still mode selectable)
POP display 4:3 aspect ratio
(3 pictures in Still mode, 1 picture in Motion Picture mode and 2 pictures in Still mode, or
Strobe mode selectable)
Multi-picture still Display of up to 24 still pictures per screen
Channel search 9, 12, or 16 picture search
(Still mode, Strobe mode, or 1 picture in Motion Picture mode selectable)
4 IINS I A/D I signal or R-Y signal (S system) input
5 ADVDD Power supply for A/D (3.3 V)
6 QINS I A/D Q signal or B-Y signal (S system) input
7 ADVSS GND for A/D
8 VRTY I Reference voltage for A/D Y signal (top)
9 VRBY I Reference voltage for A/D Y signal (bottom)
10 VRTC I Reference voltage for A/D I, Q signal (top)
11 VRBC I Reference voltage for A/D I, Q signal (bottom)
12 ADVDD Power supply for A/D (3.3 V)
13 YINE I A/D Y signal (E system) input
14 ADVSS GND for A/D
15 IINE I A/D I signal or R-Y signal (E system) input
16 AVDD Power supply for analog circuit (3.3 V)
17 QINE I A/D Q signal or B-Y signal (E system) input
18 AVSS GND for analog circuit
19 VDD Power supply (3.3 V)
20 CNT2 O Test output pin
21 CNT1 O Test output pin
22 CNT0 O Test output pin
23 CLAMP O Clamp signal monitor output
24 TIN9 I Test input pin (connect to GND)
25 TIN8 I Test input pin (connect to GND)
26 TIN7 I Test input pin (connect to GND)
27 TIN6 I Test input pin (connect to GND)
28 TIN5 I Test input pin (connect to GND)
29 TIN4 I Test input pin (connect to GND)
30 TIN3 I Test input pin (connect to GND)
31 TIN2 I Test input pin (connect to GND)
32 TIN1 I Test input pin (connect to GND)
33 TIN0 I Test input pin (connect to GND)
34 WVDE I (E system) vertical sync signal input (It can be inverted using I2C bus) (Note1)
35 WHDE I (E system) horizontal sync signal input (It can be inverted using I2C bus) (Note1)
36 VSS GND
37 WCKE I (E system) system clock input (Note1)
38 WHREFE I/O (E system) PLL phase comparison output
39 VDD Power supply (3.3 V)
40 HRST O Unit adjusting pin
41 MOH O Memory use switch signal [(YCS (L)㨯TC90A66F (H))
(144-pin QFP)
Note1: Supports 5 V interface.
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2001-06-07
TC90A66F
Pin
Number
Pin Name I/O Function
42 WVDS I (S system) vertical sync signal input (It can be inverted using I2C bus) (Note1)
43 WHDS I (S system) horizontal sync signal input (It can be inverted using I2C bus) (Note1)
44 VSS GND
45 WCKS I (S system) system clock input (Note1)
46 WHREFS O (S system) PLL phase comparison output
47 VDD Power supply (3.3 V)
48 EWMCK O (E system) write clock output for field memory
49 VSS GND
50 WMCK O (S system) write clock output for field memory
51 VSS GND
52 EWIEN O (E system) field memory input enable
53 EWEN O (E system) field memory write enable
54 EWRST O (E system) field memory write reset
55 WIEN O (S system) field memory input enable
56 WEN O (S system) field memory write enable
57 WRST O (S system) field memory write reset
58 WDAC7 O IQ or sub picture (E system) signal output (field memory write signal/MSB)
59 WDAC6 O IQ or sub picture (E system) signal output (field memory write signal/ : )
60 WDAC5 O IQ or sub picture (E system) signal output (field memory write signal/ : )
61 WDAC4 O IQ or sub picture (E system) signal output (field memory write signal/ : )
62 WDAC3 O IQ or sub picture (E system) signal output (field memory write signal/ : )
63 WDAC2 O IQ or sub picture (E system) signal output (field memory write signal/ : )
64 WDAC1 O IQ or sub picture (E system) signal output (field memory write signal/ : )
65 WDAC0 O IQ or sub picture (E system) signal output (field memory write signal/LSB)
66 VSS GND
67 WDAY7 O Y or sub picture (S system) signal output (field memory write signal/MSB)
68 WDAY6 O Y or sub picture (S system) signal output (field memory write signal/ : )
69 WDAY5 O Y or sub picture (S system) signal output (field memory write signal/ : )
70 WDAY4 O Y or sub picture (S system) signal output (field memory write signal/ : )
71 WDAY3 O Y or sub picture (S system) signal output (field memory write signal/ : )
72 WDAY2 O Y or sub picture (S system) signal output (field memory write signal/ : )
73 WDAY1 O Y or sub picture (S system) signal output (field memory write signal/ : )
74 WDAY0 O Y or sub picture (S system) signal output (field memory write signal/LSB)
75 RDAC0 I IQ or sub picture (E system) signal input (field memory read signal/LSB) (Note1)
76 RDAC1 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
77 RDAC2 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
78 RDAC3 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
79 RDAC4 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
80 RDAC5 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
81 RDAC6 I IQ or sub picture (E system) signal input (field memory read signal/ : ) (Note1)
82 RDAC7 I IQ or sub picture (E system) signal input (field memory read signal/MSB) (Note1)
83 VDD Power supply (3.3 V)
84 RDAY0 I Y or sub picture (S system) signal input (field memory read signal/LSB) (Note1)
Note1: Supports 5 V interface.
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2001-06-07
TC90A66F
Pin
Number
Pin Name I/O Function
85 RDAY1 I Y or sub picture (S system) signal input (field memory read signal/ :) (Note1)
86 RDAY2 I Y or sub picture (S system) signal input (field memory read signal/ : ) (Note1)
87 RDAY3 I Y or sub picture (S system) signal input (field memory read signal/ : ) (Note1)
88 RDAY4 I Y or sub picture (S system) signal input (field memory read signal/ : ) (Note1)
89 RDAY5 I Y or sub picture (S system) signal input (field memory read signal/ : ) (Note1)
90 RDAY6 I Y or sub picture (S system) signal input (field memory read signal/ : ) (Note1)
91 RDAY7 I Y or sub picture (S system) signal input (field memory read signal/MSB) (Note1)
92 REN O (S system) field memory read enable
93 RRST O (S system) field memory read reset
94 EREN O (E system) field memory read enable
95 ERRST O (E system) field memory read reset
96 RMCK O (S/E system) read clock output for field memory
97 RMCKI I RMCK input (phase adjustment)
98 VSS GND
99 RHREF O PLL phase comparison output for main picture
100 RCK I System clock input for main picture (Note1)
101 VDD Power supply (3.3 V)
102 RHD I Horizontal sync single input for main picture (It can be inverted using I2C bus) (Note1)
103 RVD I Vertical sync single input for main picture (It can be inverted using I2C bus) (Note1)
104 YS O YS signal output
105 KAYS O Wallpaper YS signal output
106 HYOJUN O Standard/non-standard signal output [standard (L)/non-standard (H)]
107 PWRST I System reset input [reset (L)]
108 TIMRST I Test reset input [reset (H)/normal (L)]
109 TESO O Test monitor output
110 IICNR I I2C bus noise reduction circuit [on (H)/off (L)]
111 SADSEL I Main/sub sub address switch [main (H)/sub (L)]
112 SACN O I2C bus acknowledge output pin
113 VSS GND
114 SCL I I2C bus serial clock input (Note1)
115 SDA I/O I2C bus serial data input (IN)/acknowledge (OUT) (Note1)
116 TEST4 I Test input pin (connect to GND)
117 TEST3 I Test input pin (connect to GND)
118 TEST2 I Test input pin (connect to GND)
119 TEST1 I Test input pin (connect to GND)
120 TEST0 I Test input pin (connect to GND)
121 VDD Power supply (3.3 V)
122 TIO7 I/O Test input/output pin (normally, open)
123 TIO6 I/O Test input/output pin (normally, open)
124 TIO5 I/O Test input/output pin (normally, open)
125 TIO4 I/O Test input/output pin (normally, open)
126 TIO3 I/O Test input/output pin (normally, open)
127 TIO2 I/O Test input/output pin (normally, open)
Note1: Supports 5 V interface.
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2001-06-07
Pin
Number
Pin Name I/O Function
128 TIO1 I/O Test input/output pin (normally, open)
129 TIO0 I/O Test input/output pin (normally, open)
130 CNT6 O Test output pin
131 CNT5 O Test output pin
132 CNT4 O Test output pin
133 CNT3 O Test output pin
134 VSS GND
135 DAVDD Power supply for D/A (3.3 V)
136 YOUT O Y Signal output
137 DAVSS D/A GND
138 IOUT O I signal or R-Y signal output
139 DAVDD Power supply for D/A (3.3 V)
140 QOUT O Q signal or B-Y signal output
141 VB2 D/A bias
142 VB1 D/A bias
143 VREF I D/A reference bias (supply 2.3 V)
144 ADBIAS A/D bias
TC90A66F
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2001-06-07
Pin Description
Pin Number Pin Name Function
2 YINS Y-signal (S system) analog input
Input amplitude is 1 V
4 IINS I or R-Y signal (S system) analog input
Input amplitude is 1 V
6 QINS Q or B-Y signal (S system) analog input
Input amplitude is 1 V
8 VRTY High-level reference power supply pin for ADC Y signal. Sets the upper limit of the ADC dynamic
range. Fixed to 2.2 V (typ.) by internal resistance type potential division. Connect 0.1 µF bypass
capacitor between the pin and GND.
9 VRBY Low-level reference power supply voltage for ADC Y signal. Sets the lower limit of the ADC dynamic
range. Fixed to 1.1 V (typ.) by internal resistance type potential division. Connect 0.1 µF bypass
capacitor between the pin and GND.
10 VRTC High-level reference power supply pin for ADC IQ signal. Sets the upper limit of the ADC dynamic
range. Fixed to 2.2 V (typ.) by internal resistance type potential division. Connect 0.1 µF bypass
capacitor between the pin and GND.
11 VRBC Low-level reference power supply voltage for ADC IQ signal. Sets the lower limit of the ADC dynamic
range. Fixed to 1.1 V (typ.) by internal resistance type potential division. Connect 0.1 µF bypass
capacitor between the pin and GND.
13 YINE Y signal (E system) analog input
Input amplitude is 1 V
15 IINE I or R-Y signal (E system) analog input
Input amplitude is 1 V
17 QINE Q or B-Y signal (E system) analog input
Input amplitude is 1 V
23 CLAMP Clamp signal monitor output pin.
Can monitor clamp pulse start/stop position set at 24h or 25h.
Outputs signal for the last data (S or E system) transfer.
34 WVDE (E system) vertical sync signal input pin. (It can be inverted using I2C bus)
Inputs vertical sync signal from VCD for sub picture E. It is composing 5 V interface. For negative
polarity input, set sub address [26H: EVINV] to L (negative polarity input).
35 W HDE (E system) horizontal sync signal input pin. (It can be inverted using I2C bus)
Inputs horizontal sync signal from VCD for sub picture E. It is composing 5 V interface. For negative
polarity input, set sub address [26H: EHINV] to L (negative polarity input).
37 WCKE (E system) write clock input pin. Inputs from the external PLL circuit. It is composing 5 V interface.
Inputs 2400 fH for both 4M and 2M memory mode.
38 WHREFE (E system) PLL phase comparison output.
The HREF signal obtained by the I/N divider circuit or the phase comparison result of sub picture (E)
horizontal sync signal.
40 HRST Unit adjustment (WS/WE/R switch able)
41 MOH External field memory use signal output pin.
Output amplitude is 3.3 V
Setting sub address [21H: MOH] to H uses TC90A66F; setting to L sets all memory output pins to Hi-Z.
42 WVDS (S system) vertical sync signal input pin. (It can be inverted using I2C bus)
Inputs vertical sync signal from VCD for sub picture S. It is composing 5 V interface. For negative
polarity input, set sub address [27H: WVINV] to L (negative polarity input).
43 W HDS (S system) horizontal sync signal input pin. (It can be inverted using I2C bus)
Inputs horizontal sync signal from VCD for sub picture S. It is composing 5 V interface. For negative
polarity input, set sub address [27H: WHINV] to L (negative polarity input).
45 WCKS (S system) write clock input pin. Inputs from the external PLL circuit. It is composing 5 V interface.
Inputs 2400 fH for both 4M and 2M memory mode.
typical.
p-p
typical.
p-p
typical.
p-p
typical.
p-p
typical.
p-p
typical.
p-p
typical.
p-p
TC90A66F
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2001-06-07
Pin Number Pin Name Function
46 WHREFS (S system) PLL phase comparison output.
The HREF signal obtained by the I/N divider circuit or the phase comparison result of sub picture (S)
horizontal sync signal. This signal is used to control the external VCO voltage.
48 EWMCK Outputs sub picture E write clock to external field memory.
Output amplitude is 3.3 V
typical.
p-p
50 WMCK Outputs sub picture S write clock to external field memory.
Output amplitude is 3.3 V
typical.
p-p
52 EWIEN Control signal output pin for external field memory (sub picture E).
Output amplitude is 3.3 V
typical.
p-p
53 EWEN Control signal output pin for external field memory (sub picture E).
Output amplitude is 3.3 V
typical.
p-p
54 EWRST Control signal output pin for external field memory (sub picture E).
Output amplitude is 3.3 V
typical.
p-p
55 WIEN Control signal output pin for external field memory (sub picture S).
Output amplitude is 3.3 V
typical.
p-p
56 WEN Control signal output pin for external field memory (sub picture S).
Output amplitude is 3.3 V
typical.
p-p
57 WRST Control signal output pin for external field memory (sub picture S).
Output amplitude is 3.3 V
typical.
p-p
58 to 65 WDAC7-0 Output signal to write to external field memory. (I, Q or E system).
Output amplitude is 3.3 V
typical.
p-p
Connect only when using 4M memory.
MSB: WDAC7, LSB: WDAC0
67 to 75 WDAY7-0 Output signal to write to external field memory. (Y or S system).
Output amplitude is 3.3 V
typical.
p-p
MSB: WDAY7, LSB: WDAY0
75 to 82 RDAC0-7 Input signal to read from external field memory (I, Q or E system).
It is composing 5 V interface.
Connect only when using 4M memory.
MSB: RDAC7, LSB: RDAC0
84 to 91 RDAY0-7 Input signal to read from external field memory (Y or S system).
It is composing 5 V interface.
MSB: RDAY7, LSB: RDAY0
92 REN Control signal output pin for external field memory (sub picture S).
Output amplitude is 3.3 V
typical.
p-p
93 RRST Control signal output pin for external field memory (sub picture S).
Output amplitude is 3.3 V
typical.
p-p
94 EREN Control signal output pin for external field memory (sub picture E).
Output amplitude is 3.3 V
typical.
p-p
95 ERRST Control signal output pin for external field memory (sub picture E).
Output amplitude is 3.3 V
typical.
p-p
96 RMCK Outputs read clock to external field memory.
99 RHREF PLL phase compare output pin for main picture.
The HREF signal obtained by the I/N divider circuit or the phase comparison result of RHD signal. This
signal is used to control the external VCO voltage.
100 RCK Read clock input pin. It is composing 5 V interface.
Inputs from the external PLL circuit.
Inputs 2400 fH for both 4M and 2M memory.
102 RHD Horizontal sync signal input pin for main picture (read). Inputs horizontal sync signal from VCD for main
picture. It is composing 5 V interface (negative polarity input). For negative polarity input, set sub
address [28H: RHINV] to non-inversion (L).
103 RVD Vertical sync signal input pin for main picture (read). Inputs vertical sync signal from VCD for main
picture. It is composing 5 V interface (negative polarity input). For negative polarity input, set sub
address [28H: RVINV] to non-inversion (L).
104 YS Main/sub picture switch timing signal output pin. Output amplitude is 3.3 V
signal is High, displays sub picture.
105 KAYS Wallpaper YS signal output.
106 HYOJUN Standard/non-standard signal output pin [standard (L)/non-standard (H)]
107 PWRST System reset input pin. When low input, it carries out the reset.
At least 1 V is required as reset duration.
110 IICNR I2C bus noise reduction circuit setting pin.
When set to on (connect to V
When set to off (connect to GND), data are written to register directly.
111 SADSEL Sub address of main/sub picture switching pin. [main (H)/sub (L)]
Normally, set to L (enables sub addresses 00h to 7Fh).
112 SACN I2C bus acknowledge output pin.
114 SCL I2C bus serial clock input pin. It is composing 5 V interface.
115 SDA I2C bus serial data input/acknowledge output pin.
It is composing 5 V interface.
136 YOUT Y signal output pin. Output amplitude is 0.9 V
138 IOUT I signal output pin. Output amplitude is 0.9 V
140 QOUT Q signal output pin. Output amplitude is 0.9 V
141 to 142 VB2-1 Bias pin for DAC.
Connect a 0.1 µF bypass capacitor between the pins and GND.
143 VREF DAC reference voltage input pin.
Reference voltage is 2.3 V typical.
144 ADBIAS Bias pin for ADC.
Connect a 0.1 µF bypass capacitor between the pin and AGND.
), data are latched once by the internal clock, then written to register.
DD
typical.
p-p
typical.
p-p
typical.
p-p
typical. When the YS
p-p
TC90A66F
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2001-06-07
Example of Typical A/D Converter Input Level for Luminance Signal
2.2 V
100 (IRE)
TC90A66F
Dec. HEX
255
FFH
228
E4H
1.1 V
1.1 V
0.71 V
0 (IRE)
0.27 V
−40 (IRE)
signal amplitude: 1.0 V
(100% white)
p-p
pedestal clamp value
Example of Typical A/D Converter Input Level for Chrominance Signal
2.2 V
0.5 V
1.1 V
0.5 V
reference potential
clamp value
63
3FH
0
00H
Dec. HEX
255
FFH
251
EBH
136 88H
21
15H
0
1.1 V
signal amplitude: 1.0 V
p-p
00H
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2001-06-07
Example of Typical D/A Converter Output Level for Luminance Signal
Dec. HEX
3.3 V
100 (IRE)
TC90A66F
255
FFH
228
E4H
1.0 V
2.3 V
0.64 V
0 (IRE)
0.25 V
−40 (IRE)
signal amplitude: 0.9 V
(100% white)
p-p
63
0
Example of Typical D/A Converter Output Level for Chrominance Signal
Dec. HEX
255
243
128 80H
1.1 V
3.3 V
3.25 V
0.45 V
2.8 V
0.45 V
3FH
00H
FFH
E3H
2.3 V
2.35 V
signal amplitude: 0.9 V
p-p
13
0
0DH
00H
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2001-06-07
Picture Display Function
TC90A66F
Sub picture (S) Main picture (E)
2-picture (PAP) display
4:3 aspect ratio (full picture can be displayed)
sub picture (S), (E): motion or still
(pictures can be exchanged)
Sub picture (S)
Multi search pictures
Sub picture (S): motion or still
Sub picture (E): 9 or 12 still pictures, strobe display or
only 1 motion picture and others still.
picture
Main picture
3-picture POP display
Sub picture: 4:3 aspect ratio Still, strobe, only 1
(1) Set the YS signal timing using the following registers.
(2) Set horizontal start and stop positions, and vertical start and stop positions for blanking.
Ԙ PHYSAS ԙ PHYSAE
blanking
Ԝ RVYSAS
Ԛ FHWS
Ԣ Ԡ
Ԙ PHFRS
Ԟ RVYSCS
Ԟ FVWS
Sub picture
ԟ FVWE
Ԝ RVFRS
ԛ FHWE
ԝ RVFRE
ԙ RHFRE
Sub picture (S) Sub picture (E)
ԝ RVYSAE
ԡ ԣ
Ԛ RHYSCS
ԛ RHYSCE
ԟ RVYSCE
blanking
Ԙ YS horizontal start position (S system) Ԟ YS vertical start position (E system)
ԙ YS horizontal stop position (S system) ԟ YS vertical stop position (E system)
Ԛ YS horizontal start position (E system) Ԡ Blanking horizontal start position
ԛ YS horizontal stop position (E system) ԡ Blanking horizontal stop position
Ԝ YS vertical start position (S system) Ԣ Blanking vertical start position
ԝ YS vertical stop position (S system) ԣ Blanking vertical stop position
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2001-06-07
Settings of Special Effect Functions
3. Scroll Down
Special effect function used when selecting 2-picture, 1-picure, or PIP display. The function freezes the
image signal before selection then moves the image after selection from the top.
(1) 1-field display
18h (24) FRFIԦ
FRISWԤ
(2) Write stop
2Ah (42) JWRTONԦ
(3) Select channel change start
Change channel after write actually stopped.
(4) Scroll down function environment setting
29h (41) MAINRSTԢ
2Bh (43) FIELDԦ
(5) Scroll down start
2Bh (43) JVSCRLԣ
(6) Write start
2Ah (42) JWRTONԦ
(7) Scroll down standby time (do not change frame processing during standby)
After sending write processing data, count four fields of VD for read, then send the following data.
(After new image signal is written to memory, frame is displayed.)
18h (24) FRFIԦ
FRISWԤ =
=
H (field display)
=
L (field display)
=
L (Write stop)
=
H WKYFRMԣ = H
=
H
=
H
=
H
Number of write lines
=
L
=
L
=
L
=
L
H
NTSC
(240 valid lines)
TC90A66F
PAL
(282 valid lines)
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2001-06-07
Settings of Special Effect Functions
4. Wipe Function
(1) Wipe on/off
6Ah (106) YSCMVONԦ E system wipe on (H)/off (L)
YSAMVONԢ S system wipe on (H)/off (L)
YSBMVONԡ External wipe on (H)/off (L)
(2) Wipe signal center and width settings (horizontal and vertical)
64h (100) RMHCNT Wipe signal horizontal reference (center)
65h (101) RMVCNT Wipe signal vertical reference (center)
66h (102) RMHTES Wipe signal horizontal phase adjustment (width)
67h (103) RMVTES Wipe signal vertical phase adjustment (width)
(3) Wipe signal speed settings (count number of vertical sync signal)
68h (104) RMHMOV Wipe signal horizontal operating speed large
69h (105) RMVMOV Wipe signal vertical operating speed large
(4) Wipe direction setting
6Ah (106) RMVSEL4 Up on (H)/off (L)
RMVSEL3 Down on (H)/off (L)
RMHSEL4 Right on (H)/off (L)
RMHSEL3 Left on (H)/off (L)
(5) Wipe type setting
69h (105) RMWSEL window (L) cross (H)
TC90A66F
→
slow small → fast
→
slow small → fast
window cross
(6) Wipe operating control
6Ah (106) RMHDH Wipe counter UP (L)/DOWN (H)
RMHUP Wipe counter reset reset (L)
(1) Start from wipe close
Ԙ RMHDN = L, RMHUP = L (wipe close: initial state)
ԙ RMHDN = L, RMHUP = H
Ԛ RMHDN = H, RMHUP = H (wipe open)
(2) Start from wipe open
Ԙ RMHDN = H, RMHUP = L (wipe open: initial state)
ԙ RMHDN = H, RMHUP = H
Ԛ RMHDN = L, RMHUP = H (wipe close)
*: Send in order of Ԙ to Ԛ.
*: When the center is changed, make initial settings.
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2001-06-07
TC90A66F
Maximum Ratings
Characteristics Symbol Rating Unit
Power supply voltage VSS, VDD
Input voltage
Power dissipation
Storage temperature T
(VSS ==== 0 V, Ta ==== 25°C)
V
IN1
V
IN2
P
D
(Note4)
stg
to
V
SS
V
+ 4.0
SS
−55 to 125 °C
−0.3 to
+ 0.3
V
DD
−0.3 to 525
(Note3)
2000 mW
V
V
Note3: Applicable to WVDE, WHDE, WCKE, WVDS, WHDS, W CKS, RDAC0 to RDAC7, RDAY0 to RDAY7, RCK,
RHD, RVD, SCL, and SDA pins.
Note4: When using the IC at Ta = 25°C or higher, reduce 20.0 mW per degree.
Power Dissipation Reduction Against Higher Temperature
(when mounted on board)
2000
1500
500
1100
500
Power dissipation (mW)
25 70 100
Operating temperature (°C)
125 50 0
Recommended Operating Conditions
Characteristics Symbol Test Condition Min Typ. Max Unit
Power supply voltage VDD 3.0 3.3 3.6 V
Input voltage VIN 0 VDD V
Operating temperature T
(VSS ==== 0 V)
−20 70 °C
opr
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2001-06-07
TC90A66F
Electrical Characteristics
1. DC Characteristics
Operating Conditions: V
Characteristics Symbol
Power dissipation IDD NTSC 250 mA
High-level input
voltage
Low-level input
voltage
Input current
Output voltage
Schmitt trigger hysteresis voltage VH 0.5 V (Note6)
CMOS input
Schmitt trigger
input
CMOS input
Schmitt trigger
input
High level IIH VIN = VDD −10 10 (Note5)
Low level I
High level
Low level
==== 3.0 to 3.6 V, VIN ==== 0 to VDD, Ta ==== −−−−20 to 70°C, VSS ==== 0
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
000707EBA
• The information contained herein is subject to change without notice.
39
2001-06-07
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