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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FU,TC7WG00FK
Dual 2-Input NAND Gate
Features
TC7WG00FU/FK
• High-level output current: IOH/IOL = ±8 mA (min)
at V
• High-speed operation: t
= 2.5 ns (typ.)
pd
at V
= 3 V
CC
= 3.3 V,15pF
CC
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
Marking
Absolute Maximum Ratings
SM8 US8
Product name
G 00
Lot No.
WG
00
(Ta = 25°C)
TC7WG00FU
TC7WG00FK
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Pin Assignment (top view)
Characteristics Symbol Value Unit
Power supply voltage V
DC input voltage V
DC output voltage V
Input diode current I
Output diode current I
DC output current I
DC V
Power dissipation
Storage temperature T
/ ground current I
CC
CC
IN
OUT
IK
OK
OUT
CC
P
D
−65~150 °C
stg
−0.5~4.6 V
−0.5~7.0 V
−0.5~4.6 (Note 1)
−0.5~VCC + 0.5 (Note 2)
−20 mA
−20 (Note 3) mA
±25 mA
±50 mA
300 (SM8)
200 (US8)
mW
V
1A
1B
2Y
GND
1
2
3
4
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
Note 2: High or Low State. I
Note 3: V
CC
OUT
= 0V
< GND
absolute maximum rating must be observed.
OUT
1
2007-11-01
V
8
CC
1Y
7
2B
6
2A
5
IEC Logic Symbol Truth Table
TC7WG00FU/FK
1A
1B
2A
2B
&
1Y
2Y
Inputs Outputs
A B Y
L L H
L H H
H L H
H H L
Operating Ranges
Characteristics Symbol Value Unit
Power supply voltage V
Input voltage VIN 0~5.5 V
Output voltage V
Output Current IOH/IOL
Operating temperature T
Input rise and fall time dt/dV 0~10 (Note 12) ns/V
CC
OUT
opr
0.9~3.6 V
0~3.6 (Note 4)
0~V
±8.0 (Note 6)
±4.0 (Note 7)
±3.0 (Note 8)
±1.7 (Note 9)
±0.3 (Note 10)
±0.02 (Note 11)
−40~85 °C
(Note 5)
CC
V
mA
Note 4: VCC = 0V
Note 5: High or Low state.
Note 6: VCC = 3.0~3.6 V
Note 7: VCC = 2.3~2.7 V
Note 8: V
Note 9: V
= 1.65~1.95 V
CC
= 1.4~1.6 V
CC
Note 10: VCC = 1.1~1.3 V
Note 11: VCC = 0.9 V
Note 12: VIN = 0.8~2.0 V, VCC = 3.0 V
2
2007-11-01
Electrical Characteristics
DC Characteristics
TC7WG00FU/FK
Characteristics Symbol Test Condition
High level VIH ⎯
Input voltage
Low level V
⎯
IL
High level VOH
Output voltage
Low level V
V
OL
Input leakage current IIN V
Power off leakage current I
OFF
Quiescent supply current ICC V
Ta = 25°C Ta = −40~85°C
(V) Min Typ. Max Min Max
V
CC
0.9 V
1.1~1.3
1.4~1.6
1.65~
1.95
V
× 0.7
V
× 0.65
V
× 0.65
⎯ ⎯ VCC ⎯
CC
CC
⎯ ⎯
CC
⎯ ⎯
CC
⎯ ⎯
V
CC
× 0.7
V
CC
× 0.65
V
CC
× 0.65
⎯
⎯
⎯
2.3~2.7 1.7 ⎯ ⎯ 1.7 ⎯
3.0~3.6 2.0 ⎯ ⎯ 2.0 ⎯
0.9 ⎯ ⎯ GND ⎯ GND
1.1~1.3 ⎯ ⎯
1.4~1.6 ⎯ ⎯
1.65~
1.95
⎯ ⎯
CC
× 0.3
V
CC
× 0.35
VCC
× 0.35
⎯
⎯
⎯
V
CC
× 0.3
V
CC
× 0.35
V
CC
× 0.35
V
2.3~2.7 ⎯ ⎯ 0.7 ⎯ 0.7
3.0~3.6 ⎯ ⎯ 0.8 ⎯ 0.8
IOH =−0.02 mA 0.9 0.75 ⎯ ⎯ 0.75 ⎯
V
CC
CC
CC
⎯ ⎯
⎯ ⎯
⎯ ⎯
IOH = −0.3 mA 1.1~1.3
V
IN
IOH = −1.7 mA 1.4~1.6
= V
IH
VIL
or
IOH = −3.0 mA
1.65~
1.95
× 0.75
V
× 0.75
V
-0.45
V
CC
× 0.75
V
CC
× 0.75
V
CC
-0.45
⎯
⎯
⎯
IOH = −4.0 mA 2.3~2.7 2.0 ⎯ ⎯ 2.0 ⎯
I
= −8.0 mA 3.0~3.6 2.48 ⎯ ⎯ 2.48 ⎯
OH
IOL = 0.02 mA 0.9 ⎯ ⎯ 0.1 ⎯ 0.1
V
IN
IOL = 0.3 mA 1.1~1.3 ⎯ ⎯
IOL = 1.7 mA 1.4~1.6 ⎯ ⎯
= V
IH
IOL = 3.0 mA
1.65~
1.95
CC
× 0.25
V
CC
× 0.25
⎯ ⎯ 0.45 ⎯ 0.45
⎯
⎯
V
CC
× 0.25
V
CC
× 0.25
IOL = 4.0 mA 2.3~2.7 ⎯ ⎯ 0.4 ⎯ 0.4
IOL = 8.0 mA 3.0~3.6 ⎯ ⎯ 0.4 ⎯ 0.4
= 0~5.5V 0~3.6 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA
IN
V
= 0~5.5V
IN
= 0~3.6V
V
OUT
= VCC or GND 3.6 ⎯ ⎯ 1.0 ⎯ 10.0 μA
IN
0 ⎯ ⎯ 1.0 ⎯ 10.0 μA
Unit
V
V
3
2007-11-01