Toshiba TC7WBD126FK Technical data

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TOSHIBA CMOS Dig ita l Integr ated Cir cu it Silicon Monolithic

TC7WBD126FK

Dual Bus Switch with Level Shift

The TC7WBD126FK is a low on-resistance, high-speed CMOS
2-bit bus switch. This bus switch allows the connections or
disconnections to be made with minimal propagation delay while
maintaining Low power dissipation which is the feature of
CMOS.

When output enable (OE) is at High level, the switch is on;
when at Low level, the switch is off.

The internal diode which adds to power supply line is enable to
realize the shift of signal level from 5 V to 3.3 V. (Note 1)

All inputs are equipped with protector circuits to protect the
device from static discharge.

Features

Weight: 0.01 g (typ.)

TC7WBD126FK

• Operating voltage: VCC = 4.5~5.5 V

• High speed operation: t

• Ultra-low on resistance: RON = 5 Ω (typ.)

• Electro-static discharge (ESD) performance: ±200 V or more (JEITA)

±2000 V or more (MIL)

• TTL level input (control input)

• Package: US8

Note 1: In case that over-shoot noise is detected, this device should be used with clamp diode to prevent the next

stage device from over-stress.

Pin Assignment

VCC

8

= 0.25 ns (max)

pd

(top view)

B1

OE2

7 6 5

W B D

1 2 6

A2

1 2 3 4

OE1

A1 B2

GND

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Truth Table

TC7WBD126FK

Inputs

OE

L Disconnect

H A port = B port

Function

System Diagram

A1

OE1

B1 A2

Maximum Ratings

Characteristics Symbol Rating Unit

Power supply range V
DC input voltage V
DC switch voltage V
Input diode current I
Continuous channel current I
Power dissipation P
DC VCC/GND current ICC/I
Storage temperature T

CC

IN

S

IK

S

D
GND

stg

Recommended Operating Conditions

B2

OE2

−0.5~7.0 V

−0.5~7.0 V

−0.5~7.0 V

−50 mA

128 mA
200 mW

±100 mA

−65~150 °C

Characteristics Symbol Rating Unit

Supply voltage V
Input voltage V
Switch voltage V
Operating temperature T
Input rise and fall time dt/dv 0~10 ns/V

CC

IN

opr

S

4.5~5.5 V
0~5.5 V
0~5.5 V

−40~85 °C

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Electrical Characteristics

TC7WBD126FK

DC Characteristics

Characteristics Symbol Test Condition

Input voltage

High-level output voltage VOH Figure 4     
Input leakage current I
Power off leakage current I
Off-state leakage current
(switch off)

ON resistance

Quiescent supply current

“H” level
“L” level V

(Ta ==== −−−−40~85°C)

VIH  4.5~5.5 2.0  

 4.5~5.5   0.8

IL

IN

OFF

A, B = 0~5.5 V, OE = GND

I

SZ

R

ICC

∆I

ON

CC

(Note 3)

V

CC

VIN = 0~5.5 V 4.5~5.5   ±1.0 µA

A, B, OE = 0~5.5 V 0   ±1.0 µA

VIS = 0 V

VIS = 2.4 V, IIS = 15 mA 4.5  35 50

= VCC or GND

V

IN

I

= 0

OUT

VIN = 3.4 V (one input) (Note 4) 5.5   2.5 mA

IIS = 30 mA 4.5  5 7
I

= 64 mA 4.5  5 7

IS

Switch ON 5.5   1.5 mA
Switch OFF 5.5   10 µA

4.5~5.5   ±1.0 µA

(V)

Min

Typ.

(Note 2)

Max Unit

Note 2: Typical values are at VCC = 5 V and Ta = 25°C.
Note 3: Measured by the voltage drop between A and B pins at the indicated current through the switch. On

resistance is determined by the lower of the voltages on the two (A or B) pins.

V

Ω

Note 4: Quiescent supply current at V

= 3.4 V will be sum of ICC and ∆ICC.

CC

AC Characteristics

Characteristics Symbol Test Condition

Propagation delay time
(bus to bus)

Output enable time

Output disable time

(Ta ==== −−−−40~85°C)

t

pLH

t

pHL

t

pZL

t

pZH

t

pLZ

t

pHZ

Min Max Unit

(V)

V

CC

Figure 1, Figure 2 (Note 5) 4.5  0.25 ns

Figure 1, Figure 3 4.5  4.5 ns

Figure 1, Figure 3 4.5  5.5 ns

Note 5: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.

Capacitive Characteristics

Characteristics Symbol Test Condition

Control pin input capacitance CIN (Note 6) 5.0 3 pF
Switch terminal capacitance C

(Ta ==== 25°C)

V

(V)

CC

OE = GND (Note 6) 5.0 10 pF

I/O

Typ. Unit

Note 6: This parameter is guaranteed by design.

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