Toshiba TC7WBD126AFK Technical data

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TOSHIBA CMOS Dig ita l Integr ated Cir cu it Silicon Monolithic

TC7WBD126AFK

Dual Bus Switch with Level Shift

The TC7WBD126AFK is a low on-resistance, high-speed CMOS
2-bit bus switch. This bus switch allows the connections or
disconnections to be made with minimal propagation delay while
maintaining Low power dissipation which is the feature of
CMOS.

When output enable (OE) is at High level, the switch is on;
when at Low level, the switch is off.

The device is enable to realize the shift of signal level from 5 V
to 3.3 V.

All inputs are equipped with protector circuits to protect the
device from static discharge.

Features

Weight: 0.01 g (typ.)

TC7WBD126AFK

· Operating voltage: VCC = 4.5~5.5 V

· High speed operation: t

· Ultra-low on resistance: RON = 5 Ω (typ.)

· Electro-static discharge (ESD) performance: ±200 V or more (JEITA)

±2000 V or more (MIL)

· TTL level input (control input)

· Low Power Dissipation: Icc = 10 mA (max.)

· Package: US8

Pin Assignment

VCC

8

= 0.32 ns (max)

pd

(top view)

B1 A2

OE2

7 6 5

W B A

1 2 6

1 2 3 4

OE1

A1 B2

GND

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Truth Table

TC7WBD126AFK

Inputs

OE

L Disconnect

H A port = B port

Function

System Diagram

A1

OE1

B1 A2

Maximum Ratings

Characteristics Symbol Rating Unit

Power supply range V
DC input voltage V
DC switch voltage V
Input diode current I
Continuous channel current I
Power dissipation P
DC VCC/GND current ICC/I
Storage temperature T

CC

IN

S

IK

S

D
GND

stg

Recommended Operating Conditions

B2

OE2

-0.5~7.0 V

-0.5~7.0 V

-0.5~7.0 V

-50 mA

128 mA
200 mW

±100 mA

-65~150 °C

Characteristics Symbol Rating Unit

Supply voltage V
Input voltage V
Switch voltage V
Operating temperature T
Input rise and fall time dt/dv 0~10 ns/V

CC

IN

opr

S

4.5~5.5 V
0~5.5 V
0~5.5 V

-40~85 °C

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Electrical Characteristics

TC7WBD126AFK

DC Characteristics

Characteristics Symbol Test Condition

Input voltage

High-level output voltage

Input leakage current I
Power off leakage current I
Off-STATE leakage current
(switch off)

ON resistance

Quiescent supply current ICC VIN = VCC or GND,I
Increase in ICC per input DICC VIN = 3.4 V (one input) 5.5 ¾ ¾ 2.5 mA

“H” level
“L” level V

(Ta ==== ----40~85°C)

(Note 2)

(Note 3)

VIH ¾ 4.5~5.5 2.0 ¾ ¾

¾ 4.5~5.5 ¾ ¾ 0.8

IL

V

OH

IN

OFF

A, B = 0~5.5 V, OE = V

I

SZ

R

ON

(V)

Min

V

CC

IOH=-1mA

= V

V

IS

VIN = 0~5.5 V 4.5~5.5 ¾ ¾ ±1.0 mA

A, B, OE = 0~5.5 V 0 ¾ ¾ ±1.0 mA

VIS = 0 V

VIS = 2.3 V, IIS = 15 mA

CC

CC

IIS = 64 mA

I

= 30 mA

IS

= 0 5. 5 ¾ ¾ 10 mA

OUT

4.75 2.3 2.8 3.2

5.0 2.5 3.0 3.4

5.25 2.7 3.2 3.6

4.5~5.5 ¾ ¾ ±1.0 mA

4.5 ¾ 5 9

4.75 ¾ 5 8

4.5 ¾ 5 9

4.75 ¾ 5 8

4.5 ¾ 35 65

4.75 ¾ 35 50

Typ.

(Note 1)

Max Unit

V

V

W

Note 1: Typical values are at VCC = 5 V, Ta = 25°C.
Note 2: It recommends that this device uses Pull-up resistance when adding and using resistance for

an output terminal. Since it couses to drop a VOH voltage level when using Pull-down resistance

for an output terminal.

Note 3: Measured by the voltage drop between A and B pins at the indicated current through the switch. On

resistance is determined by the lower of the voltages on the two (A or B) pins.

AC Characteristics

Characteristics Symbol Test Condition

Propagation delay time
(bus to bus)

Output enable time

Output disable time

(Ta ==== ----40~85°C)

t

pLH

t

pHL

t

pZL

t

pZH

t

pLZ

t

pHZ

V

CC

Figure 1, Figure 2 (Note 4) 4.5 ¾ 0.32 ns

Figure 1, Figure 3 4.5 ¾ 4.5 ns

Figure 1, Figure 3 4.5 ¾ 5.5 ns

Min Max Unit

(V)

Note 4: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.

Capacitive Characteristics

(Ta ==== 25°C)

Characteristics Symbol Test Condition

Control pin input capacitance CIN (Note 5) 5.0 3 pF
Switch terminal capacitance C

OE = VCC (Note 5) 5.0 10 pF

I/O

(V)

Typ. Unit

V

CC

Note 5: This parameter is guaranteed by design.

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