Toshiba TC7WBD125FK Technical data

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TOSHIBA CMO S Digital I ntegrat ed Circ uit Silicon Monolithic

TC7WBD125FK

Dual Bus Switch with Level Shift

The TC7WBD125FK is a low on-resistance, high-speed CMOS
2-bit bus switch. This bus switch allows the connections or
disconnections to be made with minimal propagation delay while
maintaining Low power dissipation which is the feature of
CMOS.

When output enable (OE) is at low level, the switch is on; when
at high level, the switch is off.

The internal diode which adds to power supply line is enable to
realize the shift of signal level from 5 V to 3.3 V. (Note 1)

All inputs are equipped with protector circuits to protect the
device from static discharge.

Features

Weight: 0.01 g (typ.)

TC7WBD125FK

• Operating voltage: V

• High speed operation: t

• Ultra-low on resistance: RON = 5 Ω (typ.)

• Electro-static discharge (ESD) performance: ±200 V or more (JEITA)

±2000 V or more (MIL)

• TTL level input (control input)

• Package: US8

Note 1: In case that over-shoot noise is detected, this device should be used with clamp diode to prevent the next

stage device from over-stress.

Pin Assignment

VCC

8

7 6

W B D

1 2 5

= 4.5~5.5 V

CC

= 0.25 ns (max)

pd

(top view)

B1 A2

2OE

5

1 2 3 4

A1 B2

OE1

GND

1

2001-12-04

Truth Table

TC7WBD125FK

Inputs

OE

L A port = B port

H Disconnect

Function

System Diagram

A1

OE1

B1

A2

2OE

Maximum Ratings

Characteristics Symbol Rating Unit

Power supply voltage V
Control pin input voltage V
Switch terminal I/O voltage V
Clump diode current IIK −50 mA
Switch I/O current I
Power dissipation P
DC VCC/GND current ICC/I
Storage temperature T

CC

IN

S

S

D
GND

stg

−0.5~7.0 V

−0.5~7.0 V

−0.5~7.0 V

128 mA
200 mW

±100 mA

−65~150 °C

Recommended Operating Conditions

B2

Characteristics Symbol Rating Unit

Power supply voltage V
Control pin input voltage V
Switch I/O voltage V
Operating temperature T
Control pin input rise/fall time dt/dv 0~10 ns/V

CC

IN

opr

S

4.5~5.5 V
0~5.5 V
0~5.5 V

−40~85 °C

2

2001-12-04

Electrical Characteristics

TC7WBD125FK

DC Characteristics

Characteristics Symbol Test Condition

Control pin input
voltage

High-level output voltage VOH Figure 4     
Input leakage current I
Power off leakage current I
Off-state leakage current

(switch off)

ON resistance (Note 3) R

Quiescent supply current

“H” level
“L” level V

(Ta ==== −−−−40~85°C)

VIH  4.5~5.5 2.0  

 4.5~5.5   0.8

IL

IN

A, B, OE = 0~5.5 V 0   ±1.0 µA

OFF

A, B = 0~5.5 V, OE = V

I

SZ

ON

ICC

∆I

VIN = 3.4 V (one input) 5.5   2.5 mA

CC

V

CC

VIN = 0~5.5 V 4.5~5.5   ±1.0 µA

CC

VIS = 0 V

VIS = 2.4 V, IIS = 15 mA 4.5  35 50

= VCC or GND

V

IN

I

= 0

OUT

IIS = 64 mA 4.5  5 7

= 30 mA 4.5  5 7

I

IS

switch ON 5.5   1.5 mA
switch OFF 5.5   10 µA

4.5~5.5   ±1.0 µA

(V)

Min

Typ.

(Note 2)

Max Unit

Note 2: The typical values are at VCC = 5 V, Ta = 25°C.
Note 3: Apply the specified current to the switch, then measure the voltages on pins A and B. The on-resistance is

the lower of the two.

AC Characteristics

(Ta ==== −−−−40~85°C)

V

Ω

Characteristics Symbol Test Condition

Propagation delay time
(bus to bus)

Output enable time

Output disable time

t

pLH

Figure 1, Figure 2 (Note 4) 4.5  0.25 ns

t

pHL

t

pZL

Figure 1, Figure 3 4.5  4.5 ns

t

pZH

t

pLZ

Figure 1, Figure 3 4.5  5.0 ns

t

pHZ

V

CC

Min Max Unit

(V)

Note 4: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.

Capacitive Characteristics

Characteristics Symbol Test Condition

Control pin input capacitance CIN (Note 5) 5.0 3 pF
Switch terminal capacitance C

(Ta ==== 25°C)

OE

I/O

V

CC

= VCC (Note 5) 5.0 10 pF

Typ. Unit

(V)

Note 5: This parameter is guaranteed by design.

3

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