Toshiba TC7WBD125AFK Technical data

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WBD125AFK
Dual Bus Switch with Level Shift
When output enable (OE) is at low level, the switch is on; when at high level, the switch is off.
The device is enable to realize the shift of signal level from 5 V to 3.3 V.
All inputs are equipped with protector circuits to protect the device from static discharge.
Features
Weight: 0.01 g (typ.)
TC7WBD125AFK
· Operating voltage: VCC = 4.5~5.5 V
· High speed operation: t
· Ultra-low on resistance: RON = 5 (typ.)
· Electro-static discharge (ESD) performance: ±200 V or more (JEITA)
±2000 V or more (MIL)
· TTL level input (control input)
· Low Power Dissipation: Icc = 10 mA (max.)
· Package: US8
Pin Assignment
VCC
8
2OE B1
7 6 5
W B A
1 2 5
= 0.32 ns (max)
pd
(top view)
A2
1 2 3 4
A1 B2
OE1
GND
1
2002-10-18
Truth Table
TC7WBD125AFK
Inputs
OE
L A port = B port
H Disconnect
Function
System Diagram
A1
OE1
B1 A2
2OE
Maximum Ratings
Characteristics Symbol Rating Unit
Power supply voltage V Control pin input voltage V Switch terminal I/O voltage V Clump diode current IIK -50 mA Switch I/O current I Power dissipation P DC VCC/GND current ICC/I Storage temperature T
CC
IN
S
S
D GND
stg
-0.5~7.0 V
-0.5~7.0 V
-0.5~7.0 V
128 mA 200 mW
±100 mA
-65~150 °C
Recommended Operating Conditions
B2
Characteristics Symbol Rating Unit
Power supply voltage V Control pin input voltage V Switch I/O voltage V Operating temperature T Control pin input rise/fall time dt/dv 0~10 ns/V
CC
IN
opr
S
4.5~5.5 V 0~5.5 V 0~5.5 V
-40~85 °C
2
2002-10-18
Electrical Characteristics
TC7WBD125AFK
DC Characteristics
Characteristics Symbol Test Condition
Input voltage
High-level output voltage
Input leakage current I Power off leakage current I
Off-STATE leakage current (switch off)
ON resistance
Quiescent supply current ICC VIN = VCC or GND,I Increase in ICC per input DICC VIN = 3.4 V (one input) 5.5 ¾ ¾ 2.5 mA
“H” level “L” level V
(Ta ==== ----40~85°C)
(Note 2)
(Note 3)
VIH ¾ 4.5~5.5 2.0 ¾ ¾
¾ 4.5~5.5 ¾ ¾ 0.8
IL
V
OH
IN
OFF
I
A, B = 0~5.5 V, OE = V
SZ
R
ON
(V)
Min
V
CC
IOH=-1mA
= V
V
IS
VIN = 0~5.5 V 4.5~5.5 ¾ ¾ ±1.0 mA
A, B, OE = 0~5.5 V 0 ¾ ¾ ±1.0 mA
VIS = 0 V
VIS = 2.3 V, IIS = 15 mA
CC
CC
IIS = 64 mA
= 30 mA
I
IS
= 0 5.5 ¾ ¾ 10 mA
OUT
4.75 2.3 2.8 3.2
5.0 2.5 3.0 3.4
5.25 2.7 3.2 3.6
4.5~5.5 ¾ ¾ ±1.0 mA
4.5 ¾ 5 9
4.75
4.5 ¾ 5 9
4.75
4.5 ¾ 35 65
4.75
Typ.
(Note 1)
¾ 5 8
¾ 5 8
¾ 35 50
Max Unit
V
V
W
Note 1: Typical values are at VCC = 5 V, Ta = 25°C. Note 2: It recommends that this device uses Pull-up resistance when adding and using resistance for
an output terminal. Since it couses to drop a VOH voltage level when using Pull-down resistance
for an output terminal.
Note 3: Measured by the voltage drop between A and B pins at the indicated current through the switch. On
resistance is determined by the lower of the voltages on the two (A or B) pins.
AC Characteristics
Characteristics Symbol Test Condition
Propagation delay time (bus to bus)
Output enable time
Output disable time
(Ta ==== ----40~85°C)
t
pLH
t
pHL
t
pZL
t
pZH
t
pLZ
t
pHZ
Min Max Unit
(V)
V
CC
Figure 1, Figure 2 (Note 4) 4.5 ¾ 0.32 ns
Figure 1, Figure 3 4.5 ¾ 4.5 ns
Figure 1, Figure 3 4.5 ¾ 5.0 ns
Note 4: The propagation delay time is calculated by the RC (on-resistance and load capacitance) time constant.
Capacitive Characteristics
(Ta ==== 25°C)
Characteristics Symbol Test Condition
Control pin input capacitance CIN (Note 5) 5.0 3 pF Switch terminal capacitance C
OE = VCC (Note 5) 5.0 10 pF
I/O
V
CC
(V)
Typ. Unit
Note 5: This parameter is guaranteed by design.
3
2002-10-18
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