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TC7SZ125AFE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ125AFE
Bus Buffer with 3-STATE Output
Features
• High output drive: ±24 mA (min) at VCC = 3 V
• Super high speed operation: t
at V
• Operation voltage range: V
• 5.5-V tolerant inputs
• Matches the performance of TC74LCX series when operated at
3.3-V V
CC
.
2.6 ns (typ.)
pd
CC (opr)
= 5 V, 50pF
CC
= 1.8~5.5 V
Weight: 0.003 g (typ.)
Marking Pin Assignment
(top view)
Type name
R B
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Power supply voltage V
DC input voltage VIN −0.5~6 V
DC output voltage V
Input diode current IIK −20 mA
Output diode current IOK ±20 mA
DC output current I
DC VCC/ground current ICC ±50 mA
Power dissipation PD 150 mW
Storage temperature T
Lead temperature (10s) T
(Ta = 25°C)
CC
OUT
OUT
stg
L
−0.5~VCC + 0.5 V
±50 mA
−65~150 °C
−0.5~6 V
260 °C
G
IN A
GND
1
2
3
5
4
VCC
OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01
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Truth Table Logic Diagram
TC7SZ125AFE
A G Y
X H Z
L L L
H L H
G
IN A
EN
OUT Y
X : Don’t Care
Z : High Impedance
Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage VCC
Input voltage VIN 0~5.5 V
Output voltage V
Operating temperature T
Input rise and fall time dt/dv
OUT
opr
1.5~5.5 (Note 1)
0~VCC V
−40~85 °C
0~20 (VCC = 1.8 V, 2.5 V ± 0.2 V)
0~10 (VCC = 3.3 V ± 0.3 V)
0~5 (V
1.8~5.5
= 5.5 V ± 0.5 V)
CC
V
ns/V
Note1 : Data retention only
2
2007-11-01