TOSHIBA TC7SZ00F, TC7SZ00FU Technical data

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ00F, TC7SZ00FU
2-Input NAND Gate

Features

High output current : ±24 mA (min) at VCC = 3 V
Super high speed operation : t
Operating voltage range : V
5.5-V tolerant inputs
5.5-V power down protection output
Matches the performance of TC74LCX series when operated at
3.3-V V
CC
2.4 ns (typ.)
pd =
at V
CC
= 1.8 to 5.5 V
CC
= 5 V, 50 pF

Marking

TC7SZ00F
TC7SZ00FU
TC7SZ00F/FU
(SMV)
J 1
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Supply voltage V
DC input voltage VIN 0.5 to 6 V
DC output voltage V
Input diode current IIK 20 mA
Output diode current IOK 20 (Note 3) mA
DC output current I
DC VCC/ground current ICC ±50 mA
Power dissipation PD 200 mW
Storage temperature T
Lead temperature (10 s) T
Product Name
(Ta = 25°C)
CC
0.5 to 6 (Note 1)
OUT
OUT
stg
0.5 to V
±50 mA
65 to 150 °C
L
0.5 to 6 V
+0.5 (Note 2)
CC
260 °C
(USV)
Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.)
Pin Assignment
IN B 1
V
IN A 2
GND 3
(top view)
5 V
4 OUT Y
CC
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc). Note 1: V Note 2: High or Low State. Do not exceed I Note 3: V
CC
OUT
= 0V
< GND
of absolute maximum ratings.
OUT
1
2009-09-09

IEC Logic Symbol Truth Table

OUT Y
IN A
IN B
&
A B Y
L L H
L H H
H L H
H H L

Operating Ranges

Characteristics Symbol Rating Unit
TC7SZ00F/FU
Supply voltage VCC
Input voltage VIN 0 to 5.5 V
Output voltage V
Operating temperature T
Input rise and fall time dt/dv
OUT
opr
1.5 to 5.5 (Note 4)
0 to 5.5 (Note 5)
0 to V
40 to 85 °C
0 to 20 (VCC = 1.8 V, 2.5 V ± 0.2 V)
0 to 10 (VCC = 3.3 V ± 0.3 V)
0 to 5 (V
1.8 to 5.5
(Note 6)
CC
= 5.0 V ± 0.5 V)
CC
ns/V
Note 4: Data retention only
Note 5: V
CC
= 0 V
Note 6: High or Low state
V
V
2
2009-09-09

Electrical Characteristics

DC Characteristics

TC7SZ00F/FU
Characteristics Symbol Test Condition
High-level input voltage V
Low-level input voltage V
IH
IL
IOH = 100 μA
V
= V
IN
High-level output voltage VOH
or
IH
V
IL
IOH = 8 mA 2.3 1.9 2.15 1.9
IOH = 16 mA 3.0 2.4 2.8 2.4
IOH = 24 mA 3.0 2.3 2.68 2.3
= 32 mA 4.5 3.8 4.2 3.8
I
OH
IOL = 100 μA
Low-level output voltage VOL V
IN
= V
IH
IOL = 8 mA 2.3 0.1 0.3 0.3
IOL = 16 mA 3.0 0.15 0.4 0.4
IOL = 24 mA 3.0 0.22 0.55 0.55
IOL = 32 mA 4.5 0.22 0.55 0.55
Input leakage current I
Power off leakage current I
Quiescent supply current I
OFF
IN
VIN or V
CC
V
= 5.5 V or GND 0 to 5.5 ±1 ±10 μA
IN
= 5.5 V 0.0 1 10 μA
OUT
V
= VCC or GND 5.5 2 20 μA
IN
Ta = 25°C Ta = −40 to 85°C
V
(V) Min Typ. Max Min. Max.
CC
CC
CC
V
CC
× 0.88
V
CC
× 0.75
1.7
V
1.8
2.3 to
5.5
CC
× 0.88
V
CC
× 0.75
1.8
2.3 to
5.5
1.8 1.7
V
× 0.12
V
× 0.25
1.8
2.3 2.2 2.3 2.2
3.0 2.9 3.0 2.9
4.5 4.4 4.5 4.4
1.8 0 0.1 0.1
2.3 0 0.1 0.1
3.0 0 0.1 0.1
4.5 0 0.1 0.1
V
CC
× 0.12
V
CC
× 0.25
Unit
V
V
3
2009-09-09
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