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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ00F, TC7SZ00FU
2-Input NAND Gate
Features
• High output current : ±24 mA (min) at VCC = 3 V
• Super high speed operation : t
• Operating voltage range : V
• 5.5-V tolerant inputs
• 5.5-V power down protection output
• Matches the performance of TC74LCX series when operated at
3.3-V V
CC
2.4 ns (typ.)
pd =
at V
CC
= 1.8 to 5.5 V
CC
= 5 V, 50 pF
Marking
TC7SZ00F
TC7SZ00FU
TC7SZ00F/FU
(SMV)
J 1
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Supply voltage V
DC input voltage VIN −0.5 to 6 V
DC output voltage V
Input diode current IIK −20 mA
Output diode current IOK −20 (Note 3) mA
DC output current I
DC VCC/ground current ICC ±50 mA
Power dissipation PD 200 mW
Storage temperature T
Lead temperature (10 s) T
Product Name
(Ta = 25°C)
CC
−0.5 to 6 (Note 1)
OUT
OUT
stg
−0.5 to V
±50 mA
−65 to 150 °C
L
−0.5 to 6 V
+0.5 (Note 2)
CC
260 °C
(USV)
Weight
SSOP5-P-0.95 : 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Pin Assignment
IN B 1
V
IN A 2
GND 3
(top view)
5 V
4 OUT Y
CC
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
Note 2: High or Low State. Do not exceed I
Note 3: V
CC
OUT
= 0V
< GND
of absolute maximum ratings.
OUT
1
2009-09-09
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IEC Logic Symbol Truth Table
IN A
IN B
&
A B Y
L L H
L H H
H L H
H H L
Operating Ranges
Characteristics Symbol Rating Unit
TC7SZ00F/FU
Supply voltage VCC
Input voltage VIN 0 to 5.5 V
Output voltage V
Operating temperature T
Input rise and fall time dt/dv
OUT
opr
1.5 to 5.5 (Note 4)
0 to 5.5 (Note 5)
0 to V
−40 to 85 °C
0 to 20 (VCC = 1.8 V, 2.5 V ± 0.2 V)
0 to 10 (VCC = 3.3 V ± 0.3 V)
0 to 5 (V
1.8 to 5.5
(Note 6)
CC
= 5.0 V ± 0.5 V)
CC
ns/V
Note 4: Data retention only
Note 5: V
CC
= 0 V
Note 6: High or Low state
V
V
2
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Electrical Characteristics
DC Characteristics
TC7SZ00F/FU
Characteristics Symbol Test Condition
High-level input voltage V
Low-level input voltage V
IH
IL
⎯
⎯
IOH = −100 μA
V
= V
IN
High-level output voltage VOH
or
IH
V
IL
IOH = −8 mA 2.3 1.9 2.15 ⎯ 1.9 ⎯
IOH = −16 mA 3.0 2.4 2.8 ⎯ 2.4 ⎯
IOH = −24 mA 3.0 2.3 2.68 ⎯ 2.3 ⎯
= −32 mA 4.5 3.8 4.2 ⎯ 3.8 ⎯
I
OH
IOL = 100 μA
Low-level output voltage VOL V
IN
= V
IH
IOL = 8 mA 2.3 ⎯ 0.1 0.3 ⎯ 0.3
IOL = 16 mA 3.0 ⎯ 0.15 0.4 ⎯ 0.4
IOL = 24 mA 3.0 ⎯ 0.22 0.55 ⎯ 0.55
IOL = 32 mA 4.5 ⎯ 0.22 0.55 ⎯ 0.55
Input leakage current I
Power off leakage current I
Quiescent supply current I
OFF
IN
VIN or V
CC
V
= 5.5 V or GND 0 to 5.5 ⎯ ⎯ ±1 ⎯ ±10 μA
IN
= 5.5 V 0.0 ⎯ ⎯ 1 ⎯ 10 μA
OUT
V
= VCC or GND 5.5 ⎯ ⎯ 2 ⎯ 20 μA
IN
Ta = 25°C Ta = −40 to 85°C
V
(V) Min Typ. Max Min. Max.
CC
CC
CC
V
CC
× 0.88
V
CC
× 0.75
⎯
⎯
1.7
V
1.8
2.3 to
5.5
CC
× 0.88
V
CC
× 0.75
1.8 ⎯ ⎯
2.3 to
5.5
⎯ ⎯
1.8 1.7
⎯ ⎯
⎯ ⎯
V
× 0.12
V
× 0.25
1.8 ⎯
2.3 2.2 2.3 ⎯ 2.2 ⎯
3.0 2.9 3.0 ⎯ 2.9 ⎯
4.5 4.4 4.5 ⎯ 4.4 ⎯
1.8 ⎯ 0 0.1 ⎯ 0.1
2.3 ⎯ 0 0.1 ⎯ 0.1
3.0 ⎯ 0 0.1 ⎯ 0.1
4.5 ⎯ 0 0.1 ⎯ 0.1
⎯
⎯
V
CC
× 0.12
V
CC
× 0.25
⎯
Unit
V
V
3
2009-09-09