TC74VCX16373FT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VCX16373FT
Low-Voltage 16-Bit D-Type Latch with 3.6-V Tolerant Inputs and Outputs
The TC74VCX16373FT is a high-performance CMOS 16-bit
D-type latch. Designed for use in 1.8-V, 2.5-V or 3.3-V systems, it
achieves high-speed operation while maintaining the CMOS low
power dissipation.
It is also designed with overvoltage tolerant inputs and outputs
up to 3.6 V.
This 16-bit D-type latch is controlled by a latch enable input
(LE) and an output enable input (OE) which are common to each
byte. It can be used as two 8-bit latches or one 16-bit latch. When
the OE input is high, the outputs are in a high-impedance state.
All inputs are equipped with protection circuits against static
discharge.
Features
Weight: 0.25 g (typ.)
• Low-voltage operation: VCC = 1.8 to 3.6 V
• High-speed operation : t
: t
: tpd = 5.7 ns (max) (VCC = 1.8 V)
• Output current : I
: I
: IOH/IOL = ±6 mA (min) (VCC = 1.8 V)
• Latch-up performance: −300 mA
• ESD performance: Machine model ≥ ±200 V
Human body model ≥ ±2000 V
• Package: TSSOP
• 3.6-V tolerant function and power-down protection provided on all inputs and outputs
OH/IOL
OH/IOL
= 3.0 ns (max) (VCC = 3.0 to 3.6 V)
pd
= 3.4 ns (max) (VCC = 2.3 to 2.7 V)
pd
= ±24 mA (min) (VCC = 3.0 V)
= ±18 mA (min) (VCC = 2.3 V)
1
2007-10-19
Truth Table
OE1 1LE 1D1-1D8 1Q1-1Q8
H X X Z
L L X Qn
L H L L
L H H H
OE2 2LE 2D1-2D8 2Q1-2Q8
H X X Z
L L X Qn
L H L L
L H H H
X: Don’t care
Z: High impedance
TC74VCX16373FT
Inputs Outputs
Inputs Outputs
Qn: Q outputs are latched at the time when the LE input is taken to a low logic level.
System Diagram
1D1
47
48
1LE
1
OE1
2D1
36
25
2LE
1D2
46 44 43 41 40 38 37
D
LE
Q
2
1Q1
2D2
35 33 32 30 29 27 26
D
LE
Q
D
LE
D
LE
Q
Q
3
1Q2
1D3
2D3
LE
LE
1D4
D
Q
5
1Q3
2D4
D
Q
LE
LE
1D5
D
Q
6
1Q4
2D5
D
Q
LE
LE
1D6
D
D
Q
Q
D
LE
8
1Q5
2D6
D
LE
Q
Q
9
1Q6
1D7
2D7
LE
LE
1D8
D
D
Q
11
Q
1Q7
2D8
D
LE
D
LE
Q
12
1Q8
Q
24
OE2
13
2Q1
14
2Q2
16
2Q3
17
2Q4
3
19
2Q5
20
2Q6
22
2Q7
23
2Q8
2007-10-19
TC74VCX16373FT
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Power supply voltage V
DC input voltage V
DC output voltage V
Input diode current I
Output diode current I
DC output current I
Power dissipation P
DC VCC/ground current per supply pin ICC/I
Storage temperature T
CC
IN
OUT
IK
OK
OUT
D
stg
−0.5 to 4.6 (Note 2)
−0.5 to V
(Note 3)
±50 (Note 4) mA
GND
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
−0.5 to 4.6 V
−0.5 to 4.6 V
+ 0.5
CC
−50 mA
±50 mA
400 mW
±100 mA
−65 to 150 °C
V
Note 2: OFF state
Note 3: High or low state. I
Note 4: V
OUT
< GND, V
absolute maximum rating must be observed.
OUT
> VCC
OUT
Operating Ranges (Note 1)
Characteristics Symbol Rating Unit
Power supply voltage V
Input voltage V
Output voltage V
Output current IOH/IOL
Operating temperature T
Input rise and fall time dt/dv 0 to 10 (Note 8) ns/V
CC
IN
OUT
opr
1.2 to 3.6 (Note 2)
0 to 3.6 (Note 3)
0 to VCC (Note 4)
±24 (Note 5)
±18 (Note 6)
1.8 to 3.6
−0.3 to 3.6 V
±6 (Note 7)
−40 to 85 °C
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 2: Data retention only
V
V
mA
Note 3: OFF state
Note 4: High or low state
Note 5: V
= 3.0 to 3.6 V
CC
Note 6: VCC = 2.3 to 2.7 V
Note 7: VCC = 1.8 V
Note 8: VIN = 0.8 to 2.0 V, VCC = 3.0 V
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2007-10-19