TOSHIBA ssm6j53fe Datasheet

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6J53FE

○ High-Speed Switching Applications ○ Power Management Switch Applications

• 1.5 V drive

• Suitable for high-density mounting due to compact package

• Low on-resistance : R

• Pb free

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation PD (Note 1) 500 mW

Channel temperature T

Storage temperature range T

Note1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm

Electrical Characteristics

= 136 mΩ (max) (@VGS = -2.5 V)

on

: R

= 204 mΩ (max) (@VGS = -1.8 V)

on

: Ron = 364 mΩ (max) (@VGS = -1.5 V)

(Ta = 25°C)

DC I

Pulse I

DS

GSS

D

DP

ch

stg

-20 V

± 8 V

-1.8

-3.6

150 °C

−55~150 °C

2

)

(Ta = 25°C)

A

1.6±0.05

1.2±0.05

1

0.50.5

1.0±0.05

2

1.6±0.05

3

0.55±0.05

1,2,5,6 :Drain 3 :Gate 4 :Source

ES6

JEDEC ⎯

JEITA ⎯

TOSHIBA 2-2N1A

Weight: 7.0 mg (typ.)

Unit : mm

6

0.2±0.05

5

4

0.12±0.05

Characteristics Symbol Test Condition Min Typ. Max Unit

V

Drain-Source breakdown voltage

Drain cut-off current I

Gate leakage current I

Gate threshold voltage Vth VDS = −3 V, ID = −1 mA −0.3 ⎯ −1.0 V

Forward transfer admittance |Yfs| VDS = −3 V, ID = −0.9 A (Note 2) 2.7 5.4 ⎯ S

Drain-Source on-resistance R

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Switching time

Total gate charge Qg ⎯ 10.6 ⎯

Gate-Source charge Qgs ⎯ 7.4 ⎯

Gate-Drain charge Qgd

Drain-Source forward voltage V

Turn-on time ton ⎯ 29 ⎯

Turn-off time t

(BR) DSSID

V

(BR) DSXID

DSS

GSS

DS (ON)

⎯ 568 ⎯

iss

oss

rss

off

DSF

= −1 mA, VGS = 0 −20 ⎯ ⎯

= −1 mA, VGS = +8 V −12 ⎯ ⎯

VDS = −20 V, VGS = 0 ⎯ ⎯ −10 µA

VGS = ± 8 V, VDS = 0 ⎯ ⎯ ±1 µA

ID = −1.0 A, VGS = −2.5 V (Note 2) ⎯ 95 136

ID = −1.0 A, VGS = −1.8 V (Note 2) ⎯ 122 204

= −0.1 A, VGS = −1.5 V (Note 2) ⎯ 137 364

I

D

= −10 V, VGS = 0

V

DS

⎯ 75 ⎯

f = 1 MHz

= −10 V, ID = −0.9 A

V

DD

= 0 ~ −2.5 V, RG = 4.7 Ω

V

GS

= −16 V, IDS = -1.8 A,

V

DS

= − 4 V

V

GS

I

= 1.8 A, VGS = 0 (Note 2)

D

⎯ 67 ⎯

⎯

⎯ 3.3 ⎯

⎯

39

0.8 1.2 V

⎯

V

mΩ

pF

ns

nC

Note 2: Pulse test

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Switching Time Test Circuit

<

)

(a) Test Circuit (b) VIN

OUT

RL

V

DD

−2.5V

0

10 µs

IN

G

R

(c) V

OUT

SSM6J53FE

0 V

−2.5 V

V

DS (ON

10%

90%

VDD = -10 V R

= 4.7 Ω

G

1%

D.U. V

: tr, tf < 5 ns

IN

Common Source Ta = 25°C

V

DD

10%

t

r

t

on

t

f

t

off

Marking Equivalent Circuit (top view)

6

4

5 4

6 5

ＫＧ

1 2 3

123

Precaution

Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, V lower voltage than V

. (The relationship can be established as follows: V

th

Be sure to take this into consideration when using the device. The V

requires a higher voltage than Vth and V

GS (on)

< Vth < V

GS (off)

recommended voltage for turning on this

GS

GS (on).

GS (off)

)

requires a

product is -1.5V or higher.

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.

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(mΩ)

R

Drain – Source on-resistance

(mΩ)

DS (ON)

R

Drain – Source on-resistance

-4

-4 V

-3.5

-3

(A)

D

-2.5

-2

-1.5

-1

Drain current I

-0.5

0

Drain - Source voltage VDS (V)

400

300

200

DS (ON)

100

0

Gate - Source voltage VGS (V)

450

Common Source

400

Ta = 25 °C

350

300

250

200

150

100

50

0

0 -1

I

– V

DS

VGS = -1.2 V

Common Source Ta = 25°C

GS

ID = -0.1 A

Common Source

Ta = 85 °C

-6 -8

-1.5 V

−25 °C

D

-2.5 V

-1.8 V

-0.5 -1 -1.5 -2

R

DS (ON)

25 °C

-2

-4

R

DS (ON)

VGS = -1.5 V

-1.8 V

-2.5 V

-2

– ID

-3 -4

Drain current ID (A)

-10000

-1000

(mA)

D

Drain current I

-0.01

(mΩ)

DS (ON)

R

Drain – Source on-resistance

(mΩ)

DS (ON)

R

Drain – Source on-resistance

SSM6J53FE

Common Source

VDS = -3 V

-100

-10

-1

-0.1

0

Ta = 85 °C

-0.2

Gate - Source voltage VGS (V)

400

300

200

100

0 -2 -4 -6 -8

Gate - Source voltage VGS (V)

500

Common Source

400

300

-1.0 A / -1.8 V

200

100

0

−50

Ambient temperature Ta (°C)

I

– V

GS

25 °C

– V

– Ta

GS

ID = -1.0 A

Common Source

100

D

−25 °C

-0.4

-0.6

R

DS (ON)

25 °C

R

DS (ON)

ID = -0.1 A / VGS = -1.5 V

-1.0 A / -2.5 V

0 50 150

-1.4 -1.2 -1.0 -0.8

Ta = 85 °C

−25 °C

-1.6

0

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(V)

th

-0.8

-0.7

-0.6

V

– Ta

th

-0.5

-0.4

-0.3

-0.2

-0.1

Gate threshold voltage V

0

−25 0 25 150

Ambient temperature Ta (°C)

50 75 100 125

5000

3000

C – V

DS

1000

500

300

100

Capacitance C (pF)

Common

50

Source

30

Ta = 25 °C f = 1 MHz

VGS = 0 V

10

-0.1 -1 -10 -100

Drain – Source voltage VDS (V)

1000

t – I

D

t

off

100

tf

Switching time t (ns)

ton

10

tr

1

0.01

0.1

Drain current ID (A)

Common Source

VDS = -3 V

ID = -1 mA

C

iss

C

oss

C

rss

Common Source

VDD = -10 V

VGS = 0 ∼ -2.5 V Ta = 25 °C

RG = 4.7 Ω

1 10

|Y

| – ID

fs

⎪ (S)

fs

30

Common Source

VDS = -3 V

10

Ta = 25 °C

3

1

0.3

0.1

0.03

Forward transfer admittance ⎪Y

0.01

-10

-100

Drain current ID (mA)

Dynamic Input Characteristic

-10

-9

-8

(V)

GS

-7

-6

-5

-4

-3

-2

Gate-Source voltage V

-1

0

0 25

VDD = -16 V

51015

Total gate charge Qg (nC)

IDR – VDS

-2 Common Source

(A)

-1.5

DR

-0.5

VGS = 0 V Ta = 25 °C

G

-1

D

I

DR

S

Drain reverse current I

0

0 1.2 0.6 0.2 0.8 0.4 1

Drain-Source voltage VDS (V)

SSM6J53FE

20

-100001

-1000

Common Source ID = -1.8 A Ta = 25 °C

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-10

-3

-1

-0.4

(A)

D

-0.1

-0.03

Drain current I

-0.01

-0.003

-0.001

-0.1

(°C /W)

Transient thermal impedance r

ID max (Pulsed) *

ID max (Continuous)

DC operation

Ta = 25°C

Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t Cu pad: 645 mm2 )

* Single Non-repetitive Pulse Ta = 25°C

Curves must be derated

linearly with increase in

temperature.

Drain-Source voltage VDS (V)

r

– tw

1000

Single Pulse

Mounted on FR4 board

th

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)

100

10

1

0.001 1000 0.01 0.1 1 100

th

10

Pulse width tw (s)

Safe operating area

1 ms*

10 ms*

10s*

600

500

(mW)

D

400

300

200

100

Drain power dissipation P

0

0 100 50

Ambient temperature Ta (°C)

-1 -10 -100

-30 -3 -0.3

SSM6J53FE

P

– Ta

D

Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t,

Cu Pad: 645 mm2）

150

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SSM6J53FE

RESTRICTIONS ON PRODUCT USE

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

030619EAA

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced

and sold, under any law and regulations.

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