TOSHIBA ssm3k36tu_080310 Datasheet

Download

Page 1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K36TU

○ High-Speed Switching Applications

• 1.5-V drive

• Low ON-resistance: R

= 1.52 Ω (max) (@VGS = 1.5 V)

: Ron = 1.14 Ω (max) (@VGS = 1.8 V)

: R

= 0.85 Ω (max) (@VGS = 2.5 V)

: R

= 0.66 Ω (max) (@VGS = 4.5 V)

: Ron = 0.63 Ω (max) (@VGS = 5.0 V)

2.0±0.1

0.65±0.05

Absolute Maximum Ratings (Ta = 25˚C)

Characteristics Symbol Rating Unit

Drain–source voltage V

Gate–source voltage V

Drain current

Drain power dissipation

Channel temperature T

Storage temperature T

DC I

Pulse I

DSS

GSS

PD (Note 1) 500

(Note 2) 800

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

20 V

± 10 V

500

1000

150 °C

−55 to 150 °C

Weight: 6.6 mg (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note2: Mounted on a ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

)

Marking Equivalent Circuit

(top view)

0.7±0.05

UFM

JEDEC ―

JEITA ―

TOSHIBA 2-2U1A

2.1±0.1

1.7±0.1

Unit: mm

1: Gate

2: Source

3: Drain

-0.05

+0.1

0.3

0.166±0.05

N X

1 2

2008-03-10

Page 2

SSM3K36TU

Electrical Characteristics

Characteristics Symbol Test Conditions Min Typ. Max Unit

Drain-source breakdown voltage

Drain cutoff current I

Gate leakage current I

Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V

Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note3) 420 840 ⎯ mS

Drain-source ON-resistance R

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Total Gate Charge Qg

Gate−Source Charge

Gate−Drain Charge

Switching time

Drain-source forward voltage V

Turn-on time ton ⎯ 30 ⎯

Turn-off time t

(Ta = 25°C)

(BR) DSSID

(BR) DSXID

DSS

GSS

DS (ON)

⎯ 46 ⎯

iss

oss

rss

off

DSF

= 1 mA, VGS = 0 20 ⎯ ⎯

= 1 mA, VGS = - 10 V 12 ⎯ ⎯

VDS =20 V, VGS = 0 ⎯ ⎯ 1 μA

VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA

ID = 200 mA, VGS = 5.0 V (Note3) ⎯ 0.46 0.63

ID = 200 mA, VGS = 4.5 V (Note3) ⎯ 0.51 0.66

ID = 200 mA, VGS = 2.5 V (Note3) ⎯ 0.66 0.85

ID = 100 mA, VGS = 1.8 V (Note3) ⎯ 0.81 1.14

ID = 50 mA, VGS = 1.5 V (Note3) ⎯ 0.95 1.52

⎯ 10.8 ⎯

ID = -0.5 A, VGS = 0 V (Note2) ⎯ -0.88 -1.2 V

= 10 V, VGS = 0, f = 1 MHz

= 10V, I

= 4.0 V

= 10 V, ID = 200 mA

= 0 to 2.5 V, RG = 50 Ω

= 0.5 A

⎯ 7.3 ⎯

⎯ 1.23 ⎯

⎯ 0.60 ⎯

⎯ 0.63 ⎯

⎯ 75 ⎯

Note2: Pulse test

Switching Time Test Circuit

(a) Test Circuit

2.5 V

10 μs

VDD = 10 V

OUT

= 50 Ω

D.U. ≤ 1% V

Common Source Ta = 25°C

: tr, tf < 5 ns

(b) VIN

OUT

2.5 V

0 V

DS (ON)

10%

tr t

90%

10%

90%

off

Usage Considerations

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K36TU). Then, for normal switching operation, V V

This relationship can be expressed as: V

th.

GS(off)

< Vth < V

Take this into consideration when using the device.

must be higher than V

GS(on)

GS(on).

and V

th,

must be lower than

GS(off)

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.

2008-03-10

Page 3

SSM3K36TU

1000

800

(mA)

600

400

Drain current I

200

– V

2.5 V

1.8 V

1.5 V

10 V

4.5 V

– V

1000

100

(mA)

Ta = 100 °C

VGS = 1.2 V

Drain current I

0.1

Common Source

0.2 0.4 0.6

Ta = 25 °C

0.8 1.0

0.01 0

Drain-source voltage VDS (V)

DS (ON)

– V

ID =200 mA

Common Source

Common Source Ta = 25°C

− 25 °C

25 °C

Common Source

VDS = 3 V

Gate-source voltage VGS (V)

DS (ON)

– ID

3.0 1.0 2.0

(Ω)

DS (ON)

Drain-source ON-resistance

(Ω)

DS (ON)

1.5

1.0 200 m A / 4.5 V

0.5

25 °C

Gate-source voltage VGS (V)

Common Source

200 m A / 2.5 V

– Ta

DS (ON)

ID = 50 m A / VGS = 1.5 V

100 m A / 1.8 V

Ta = 100 °C

− 25 °C

8 2 6 10

200 m A / 5.0 V

(Ω)

1.5 V

DS (ON)

Drain-source ON-resistance

VGS = 4.5V

0 400

1.0

(V)

0.5

1.8 V

2.5V

200

600

Drain current ID (mA)

– Ta

800

Common Source

VDS = 3 V

ID = 1 mA

1000

Drain-source ON-resistance

−50 0 50 150

100

Ambient temperature Ta (°C)

Gate threshold voltage V

−50 0 15050 100

Ambient temperature Ta (°C)

2008-03-10

Page 4

SSM3K36TU

⎪

| – ID

10000

Common Source

3000

1000

VDS = 3 V Ta = 25°C

(mS)

1000

(mA)

100

IDR – VDS

300

100

Forward transfer admittance

100

Drain current ID (mA)

C – V

100

Capacitance C (pF)

Common Source

Ta = 25°C f = 1 MHz

VGS = 0 V

0.1 1 10 100

Drain-source voltage VDS (V)

25 °C

Ta =100 °C

−25 °C

–0.5 –1.0 –1.5

Common Source VGS = 0 V

1000

Drain reverse current I

0.1

Drain-source voltage VDS (V)

t – I

1000

off

iss

oss

rss

Switching time t (ns)

100

10 100 1000

Common Source

VDD = 10 V

VGS = 0 to 2.5 V Ta = 25 °C

RG = 4.7 Ω

Drain current ID (mA)

Dynamic Input Characteristic

Common Source

ID = 0.5 A Ta = 25°C

(V)

VDD = 10 V VDD = 16 V

Gate-source voltage V

0 2

1 3

Total Gate Charge Qg (nC)

– Ta

1000

(mW)

Drain power dissipation P

800

600

400

200

a: Mounted on a ceramic board

(25.4mm

× 25.4mm × 0.8mm ,

Cu Pad : 645 mm2)

b: Mounted on a FR4 Board

(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)

80 60 40 20 0 -20 -40

120 100 140

160

Ambient temperature Ta (°C)

2008-03-10

Page 5

SSM3K36TU

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

• A

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

2008-03-10