
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35FS
SSM3K35FS
○ High-Speed Switching Applications
○ Analog Switch Applications
• 1.2-V drive
• Low ON-resistance: R
= 20 Ω (max) (@VGS = 1.2 V)
on
: R
= 8 Ω (max) (@VGS = 1.5 V)
on
: R
= 4 Ω (max) (@VGS = 2.5 V)
on
: R
= 3 Ω (max) (@VGS = 4.0 V)
on
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics Symbol Rating Unit
Drain–source voltage V
Gate–source voltage V
Drain current
Drain power dissipation P
Channel temperature T
Storage temperature T
DC I
Pulse I
DSS
GSS
D
DP
D
ch
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
(Ta = 25°C)
20 V
±10 V
180
360
100 mW
150 °C
−55 to 150 °C
mA
JEDEC -
JEITA -
TOSHIBA 2-2H1B
Weight: 2.4 mg (typ.)
Unit: mm
Gate leakage current I
Drain–source breakdown voltage V
Drain cutoff current I
Gate threshold voltage Vth
Forward transfer admittance ⏐Yfs⏐
Drain–source ON-resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Drain–source forward voltage V
Turn-on time
Turn-off time
Note 1: Pulse test
VGS = ±10 V, VDS = 0V ⎯ ⎯ ±10 μA
GSS
(BR) DSS
DSS
DS (ON)
iss
rss
oss
t
on
t
off
DSF
ID = 0.1 mA, VGS = 0V
V
⎯ 9.5 ⎯
⎯ 4.1 ⎯
= 20 V, VGS = 0V
DS
V
= 3 V, ID = 1 mA
DS
V
= 3 V, ID = 50 mA (Note 1)
DS
ID = 50 mA, VGS = 4 V (Note 1) ⎯ 1.5 3
ID = 50 mA, VGS = 2.5 V (Note 1) ⎯ 2 4
ID = 5 mA, VGS = 1.5 V (Note 1) ⎯ 3 8
= 5 mA, VGS = 1.2 V (Note 1) ⎯ 5 20
I
D
= 3 V, VGS = 0V, f = 1 MHz
V
DS
= 3 V, ID = 50 mA,
V
DD
VGS = 0 to 2.5 V
I
= - 180 mA, VGS = 0V (Note 1) ⎯ -0.9 -1.2 V
D
1
20 ⎯ ⎯ V
⎯ ⎯ 1 μA
0.4 ⎯ 1.0 V
115 ⎯ ⎯ mS
⎯ 9.5 ⎯
⎯ 115 ⎯
⎯
300
2008-03-10
Ω
pF
ns
⎯

Switching Time Test Circuit
(a) Test Circuit (b) VIN
2.5 V
IN
0
10 μs
VDD = 3 V
D.U. ≤ 1%
V
: tr, tf < 5 ns
IN
= 50 Ω)
(Z
out
Common Source
Ta = 25°C
50 Ω
OUT
RL
V
DD
(c) V
OUT
Marking Equivalent Circuit
3
KZ
1 2
1 2
3
Usage Considerations
(top view)
V
V
DS (ON
2.5 V
0 V
DD
SSM3K35FS
90%
10%
10%
90%
t
r
t
on
t
f
t
off
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM3K35FS). Then, for normal switching operation, V
V
This relationship can be expressed as: V
th.
GS(off)
< Vth < V
must be higher than V
GS(on)
GS(on).
and V
th,
must be lower than
GS(off)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM3K35FS
(mA)
D
Drain current I
400
300
200
100
I
– VDS
D
4 V 10 V 2.5 V
0
0
Common Source
Ta = 25°C
1.8 V
1.5 V
VGS = 1.2 V
121.5 0.5
1000
(mA)
D
Drain current I
Common Source
VDS = 3 V
100
Ta = 100°C
10
25°C
1
0.1
0.01
02 31
−25°C
I
– VGS
D
Drain–source voltage VDS (V) Gate–source voltage VGS (V)
10
R
DS (ON)
– VGS
Common Source
ID = 5 mA
10
R
DS (ON)
– VGS
Common Source
ID = 50 mA
(Ω)
R
Drain–source ON-resistance
(Ω)
DS (ON)
R
Drain–source ON-resistance
5
DS (ON)
25°C
0
0 4 108 2 6
Gate–source voltage VGS (V)
10
Common Source
Ta = 25°C
VGS = 1.2 V
5
1.5 V
2.5 V
4 V
0
1
R
DS (ON)
– ID
100
Drain current ID (mA)
Ta = 100°C
−25°C
(Ω)
5
DS (ON)
R
25°C
Drain–source ON-resistance
0
04 108 26
Ta = 100°C
−25°C
Gate–source voltage VGS (V)
10
R
Common Source
(Ω)
VGS = 1.2 V, ID = 5 mA
5
DS (ON)
R
1.5 V, 5 mA
Drain–source ON-resistance
100010
2.5 V, 50 mA
4 V, 50 mA
0
−50 50 1500 100
DS (ON)
– Ta
Ambient temperature Ta (°C)
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SSM3K35FS
V
– Ta
1.0
(V)
th
0.5
Common Source
ID = 1 mA
VDS = 3 V
th
1000
500
300
⎪ (mS)
fs
100
50
30
10
5
3
Gate threshold voltage V
0
−50 50 1500 100
Ambient temperature Ta (°C)
1
1 10 100 1000
Forward transfer admittance ⎪Y
Drain current ID (mA)
I
– VDS
1000
Common Source
V
= 0 V
GS
D
IDR
G
S
25°C
(mA)
100
DR
10
DR
0.1
Ta = 100°C
1
−25°C
Drain reverse current I
0.01
0 −1.5−0.5 −1
Drain–source voltage VDS (V)
100
50
10
5
Capacitance C (pF)
1
0.1
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain–source voltage VDS (V)
⎪Y
⎪ – ID
fs
Common Source
VDS = 3 V
Ta = 25 °C
DS
C
iss
C
oss
C
rss
C – V
1 10 100 5 50 0.5
t – I
5000
3000
t
off
1000
tf
500
300
100
ton
50
Switching time t (ns)
tr
30
10
0.1 1 10 100
D
Drain current ID (mA)
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
1000
– Ta
P
250
200
(mW)
D
150
D
100
50
Drain Power Dissipation P
0
0
20 60 80 100 140 120
16040
Ambient temperature Ta (°C)
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SSM3K35FS
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
• A
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
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2008-03-10