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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35CT
SSM3K35CT
○ High-Speed Switching Applications
○ Analog Switch Applications
• 1.2-V drive
• Low ON-resistance : R
= 20 Ω (max) (@VGS = 1.2 V)
on
: Ron = 8 Ω (max) (@VGS = 1.5 V)
: R
= 4 Ω (max) (@VGS = 2.5 V)
on
: R
= 3 Ω (max) (@VGS = 4.0 V)
on
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics Symbol Rating Unit
Drain–source voltage V
Gate–source voltage V
Drain current
Drain power dissipation PD(Note 1) 100 mW
Channel temperature T
Storage temperature T
DC I
Pulse I
DSS
GSS
D
DP
ch
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm
Marking
(top view)
Pin Condition
20 V
±10 V
180
360
150 °C
−55 to 150 °C
2
)
(top view)
mA
Equivalent Circuit
Unit: mm
1.0±0.05
0.6±0.05
0.5±0.03
0.25±0.03
１２
0.25±0.03
0.35±0.02
0.15±0.03
３
0.05±0.03
0.65±0.02
0.05±0.03
+0.02
0.38
-0.03
CST3
JEDEC -
JEITA -
TOSHIBA 2-1J1B
Weight: 0.75 mg (typ.)
(top view)
Polarity mark Polarity mark (on the top)
1
SD
2
3
1. Gate
2. Source
3. Drain
*Electrodes: on the bottom
1
3
1
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SSM3K35CT
)
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain–source breakdown voltage V
Drain cutoff current I
Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V
Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 50 mA (Note 2) 115 ⎯ ⎯ mS
Drain–source ON-resistance R
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Drain–source forward voltage V
Turn-on time ton ⎯ 115 ⎯
Turn-off time t
(Ta = 25°C)
VGS = ±10 V, VDS = 0V ⎯ ⎯ ±10 μA
GSS
(BR) DSSID
VDS = 20 V, VGS = 0V ⎯ ⎯ 1 μA
DSS
DS (ON)
⎯ 9.5 ⎯
C
iss
⎯ 4.1 ⎯
C
rss
C
oss
off
ID = - 180 mA, VGS = 0V (Note 2)
DSF
= 0.1 mA, VGS = 0V 20 ⎯ ⎯ V
ID = 50 mA, VGS = 4 V (Note 2) ⎯ 1.5 3
ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2 4
ID = 5 mA, VGS = 1.5 V (Note 2) ⎯ 3 8
I
= 5 mA, VGS = 1.2 V (Note 2) ⎯ 5 20
D
V
= 3 V, VGS = 0V, f = 1 MHz
DS
⎯ 9.5 ⎯
= 3 V, ID = 50 mA,
V
DD
= 0 to 2.5 V
V
GS
⎯
300
⎯ -0.9 -1.2 V
⎯
Note 2: Pulse test
Switching Time Test Circuit
Ω
pF
ns
(a) Test Circuit (b) VIN
2.5 V
IN
OUT
2.5 V
90%
10%
0
10 μs
VDD = 3 V
D.U. ≤ 1%
: tr, tf < 5 ns
V
IN
(Z
= 50 Ω)
out
Common Source
Ta = 25°C
50 Ω
RL
V
DD
(c) V
OUT
V
V
DS (ON
0 V
DD
10%
90%
t
r
t
on
t
off
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM3K35CT). Then, for normal switching operation, V
V
This relationship can be expressed as: V
th.
GS(off)
< Vth < V
must be higher than V
GS(on)
GS(on).
and V
th,
must be lower than
GS(off)
Take this into consideration when using the device.
Handling Precaution
t
f
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM3K35CT
(mA)
D
Drain current I
400
300
200
100
I
– VDS
D
4 V 10 V 2.5 V
0
0
Common Source
Ta = 25°C
1.8 V
1.5 V
VGS = 1.2 V
121.5 0.5
1000
(mA)
D
Drain current I
Common Source
VDS = 3 V
100
Ta = 100°C
10
25°C
1
0.1
0.01
02 31
−25°C
I
– VGS
D
Drain–source voltage VDS (V) Gate–source voltage VGS (V)
10
R
DS (ON)
– VGS
Common Source
ID = 5 mA
10
R
DS (ON)
– VGS
Common Source
ID = 50 mA
(Ω)
5
DS (ON)
R
Drain–source ON-resistance
0
0 4 108 2 6
Gate–source voltage VGS (V)
(Ω)
DS (ON)
R
Drain–source ON-resistance
10
Common Source
Ta = 25°C
VGS = 1.2 V
5
1.5 V
2.5 V
4 V
0
1
R
DS (ON)
– ID
100
Drain current ID (mA)
25°C
Ta = 100°C
−25°C
(Ω)
5
DS (ON)
R
25°C
Drain–source ON-resistance
0
04 108 26
Ta = 100°C
−25°C
Gate–source voltage VGS (V)
10
R
Common Source
(Ω)
VGS = 1.2 V, ID = 5 mA
5
DS (ON)
R
1.5 V, 5 mA
Drain–source ON-resistance
100010
2.5 V, 50 mA
4 V, 50 mA
0
−50 50 1500 100
DS (ON)
– Ta
Ambient temperature Ta (°C)
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SSM3K35CT
V
– Ta
1.0
(V)
th
0.5
Common Source
ID = 1 mA
VDS = 3 V
th
1000
500
300
⎪ (mS)
fs
100
50
30
10
5
3
Gate threshold voltage V
0
−50 50 1500 100
Ambient temperature Ta (°C)
1
Forward transfer admittance ⎪Y
1 10 100 1000
Drain current ID (mA)
I
– VDS
1000
Common Source
V
= 0 V
GS
(mA)
100
DR
10
D
IDR
G
S
25°C
DR
0.1
Ta = 100°C
1
−25°C
Drain reverse current I
0.01
0 −1.5−0.5 −1
Drain–source voltage VDS (V)
100
50
10
5
Capacitance C (pF)
1
0.1
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain – Source voltage VDS (V)
⎪Y
⎪ – ID
fs
Common Source
VDS = 3 V
Ta = 25°C
DS
C
iss
C
oss
C
rss
C – V
1 10 100 5 50 0.5
5000
3000
t
off
1000
tf
500
300
100
ton
50
tr
Switching time t (ns)
30
10
0.1 1 10
Drain current ID (mA)
t – I
D
Common Source
VDD = 3 V
VGS = 0 to2.5 V
Ta = 25°C
100
1000
– Ta
P
250
200
(mW)
D
150
Mounted on FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 )
D
100
50
Drain Power Dissipation P
0
0
20 60 80 100 140 120
16040
Ambient temperature Ta (°C)
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SSM3K35CT
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
• A
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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