Datasheet SSM3K16TE Datasheet (TOSHIBA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K16TE

SSM3K16TE

High Speed Switching Applications

Analog Switch Applications

· Suitable for high-density mounting due to compact package

· Low on resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)

: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C) P

Channel temperature T

Storage temperature range T

(Ta = 25°C)

DC

Pulse

DS

GSS

I

D

I

DP

100 mW

D

ch

stg

20 V

±10 V

100

200

150 °C

-55~150 °C

Marking Equivalent Circuit

3

3

Unit: mm

mA

JEDEC ―

JEITA ―

TOSHIBA 2-1B1B

Weight: 2.2 mg (typ.)

D S

1 2

12

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain cut-off current I

Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V
Forward transfer admittance ½Yfs½ VDS = 3 V, ID = 10 mA 40 ¾ ¾ mS

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 70 ¾

Turn-off time t

(Ta = 25°C)

(BR) DSSID

DS (ON)

VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA

GSS

= 0.1 mA, VGS = 0 20 ¾ ¾ V

VDS = 20 V, VGS = 0 ¾ ¾ 1 mA

DSS

ID = 10 mA, VGS = 4 V ¾ 1.5 3.0

ID = 10 mA, VGS = 2.5 V ¾ 2.2 4.0

I

= 1 mA, VGS = 1.5 V ¾ 5.2 15

D

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF

iss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 4.5 ¾ pF

rss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.8 ¾ pF

oss

V

= 3 V, ID = 10 mA,

DD

V

= 0~2.5 V

off

GS

¾ 125 ¾

Switching Time Test Circuit

W

ns

(a) Test circuit

2.5 V

0

10 ms

VDD = 3 V
Duty
V

: tr, tf < 5 ns

IN

(Z

out

Common Source
Ta = 25°C

1%

= 50 W)

IN

(b) V

OUT

R

50 9

L

V

DD

(c) V

IN

OUT

2.5 V

t

on

10%

t

r

10%

90%

0 V

V

DD

V

DS (ON

90%

t

off

t

f

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, V
voltage than V

. (Relationship can be established as follows: V

th

Please take this into consideration for using the device. V
this product.

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (off)

recommended voltage of 1.5 V or higher to turn on

GS

GS (on)

)

requires lower

GS (off)

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250

200

10

2.5

4

3

2.3

(mA)

150

D

100

Drain current I

50

0

0

Drain-Source voltage VDS (V) Gate-Source voltage VGS (V)

– VDS

I

D

2.1

121.5 0.5

Common source

Ta = 25°C

VGS = 1.3 V

1.9

1.7

1.5

1000

100

(mA)

D

10

1

Drain current I

0.1

0.01
02 31

Common source

VDS = 3 V

Ta = 100°C

25°C

– VGS

I

D

-25°C

12

10

8

(W)

6

DS (ON)

R

4

Drain-Source on resistance

2

0

1

VGS = 1.5 V

Drain current ID (mA)

R

DS (ON)

2.5 V

4 V

– ID

100

Common source

Ta = 25°C

6

5

4

(W)

100010

3

DS (ON)

R

2

Drain-Source on resistance

1

0

04 108 26

Gate-Source voltage VGS (V)

R

DS (ON)

– VGS

Ta = 100°C

25°C

-25°C

Common source

ID = 10 mA

8

Common source

6

VGS = 1.5 V, ID = 1 mA

(W)

4

DS (ON)

R

2

Drain-Source on resistance

0

-25 50 150125 0 75 25 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

R

DS (ON)

2.5 V, 10 mA

– Ta

4 V, 10 mA

2

Common source
ID = 0.1 mA
VDS = 3 V

1.6

(V)

th

1.2

0.8

0.4

Gate threshold voltage V

0

-25 50 150125 0 75 25 100

V

– Ta

th

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r

f

f

500

Forward transfer admittance

ï (mS)

fs

ïY

Common source

300

VDS = 3 V

Ta = 25°C

100

50

30

10

5

3

1

1 10 100

Drain current ID (mA) Drain-Source voltage VDS (V)

ïY

ï – ID

fs

250

Common source

VGS = 0 V

Ta = 25°C

200

(mA)

DR

150

Drain reverse current I

1000

G

100

50

0

0 -1.4-0.4-0.2 -0.6 -0.8 -1 -1.2

– VDS

I

DR

D

I

DR

S

100

50

30

Capacitance C (pF)

10

5

3

Common source

VGS = 0 V

1

f = 1 MHz

0.5
Ta = 25°C

0.3

0.3 3 30

0.1 1 10 100 5 50 0.5

Drain-Source voltage VDS (V)

C – V

DS

C

iss

C

oss

C

rss

5000

3000

t

1000

Switching time t (ns)

of

500

t

300

100

t

on

50

30

10

t

0.1 1 10

Drain current ID (mA)

t – I

D

Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C

100

250

P

– Ta

D

200

(mW)

D

150

100

50

Drain power dissipation P

0

0

80 120

Ambient temperature Ta (°C)

16040

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A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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