TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
SSM3K16FU
High Speed Switching Applications
Analog Switching Applications
· Suitable for high-density mounting due to compact package
· Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-Source voltage V
Gate-Source voltage V
Drain current
Drain power dissipation (Ta = 25°C) PD (Note) 150 mW
Channel temperature T
Storage temperature range T
Note: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm
(Ta = 25°C)
DC
Pulse
DS
GSS
I
D
I
DP
ch
stg
20 V
±10 V
100
200
150 °C
-55~150 °C
2
´ 3)
mA
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1E
0.6 mm
1.0 mm
Marking Equivalent Circuit
3
D S
1 2
12
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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)
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Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-Source breakdown voltage V
Drain cut-off current I
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V
Forward transfer admittance ½Yfs½ VDS = 3 V, ID = 10 mA 40 ¾ ¾ mS
Drain-Source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton ¾ 70 ¾
Turn-off time t
(Ta = 25°C)
(BR) DSSID
DS (ON)
VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA
GSS
= 0.1 mA, VGS = 0 20 ¾ ¾ V
VDS = 20 V, VGS = 0 ¾ ¾ 1 mA
DSS
ID = 10 mA, VGS = 4 V ¾ 1.5 3.0
ID = 10 mA, VGS = 2.5 V ¾ 2.2 4.0
I
= 1 mA, VGS = 1.5 V ¾ 5.2 15
D
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF
iss
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 4.5 ¾ pF
rss
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.8 ¾ pF
oss
V
= 3 V, ID = 10 mA,
DD
V
= 0~2.5 V
off
GS
¾ 125 ¾
Switching Time Test Circuit
W
ns
(a) Test circuit
2.5 V
0
10 ms
VDD = 3 V
Duty
V
: tr, tf < 5 ns
IN
(Z
out
Common Source
Ta = 25°C
1%
= 50 W)
IN
(b) V
OUT
R
50 9
L
V
DD
(c) V
IN
OUT
2.5 V
t
on
10%
t
r
10%
90%
0 V
V
DD
V
DS (ON
90%
t
off
t
f
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, V
voltage than V
. (Relationship can be established as follows: V
th
Please take this into consideration for using the device. V
this product.
requires higher voltage than Vth and V
GS (on)
< Vth < V
GS (off)
recommended voltage of 1.5 V or higher to turn on
GS
GS (on)
)
requires lower
GS (off)
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250
200
10
2.5
4
3
2.3
(mA)
150
D
100
Drain current I
50
0
0
Drain-Source voltage VDS (V) Gate-Source voltage VGS (V)
– VDS
I
D
2.1
121.5 0.5
Common source
Ta = 25°C
VGS = 1.3 V
1.9
1.7
1.5
1000
100
(mA)
D
10
1
Drain current I
0.1
0.01
02 31
Common source
VDS = 3 V
Ta = 100°C
25°C
– VGS
I
D
-25°C
12
10
8
(W)
6
DS (ON)
R
4
Drain-Source on resistance
2
0
1
VGS = 1.5 V
Drain current ID (mA)
R
DS (ON)
2.5 V
4 V
– ID
100
Common source
Ta = 25°C
6
5
4
(W)
100010
3
DS (ON)
R
2
Drain-Source on resistance
1
0
04 108 26
Gate-Source voltage VGS (V)
R
DS (ON)
– VGS
Ta = 100°C
25°C
-25°C
Common source
ID = 10 mA
8
Common source
6
VGS = 1.5 V, ID = 1 mA
(W)
4
DS (ON)
R
2
Drain-Source on resistance
0
-25 50 150125 0 75 25 100
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
R
DS (ON)
2.5 V, 10 mA
– Ta
4 V, 10 mA
2
Common source
ID = 0.1 mA
VDS = 3 V
1.6
(V)
th
1.2
0.8
0.4
Gate threshold voltage V
0
-25 50 150125 0 75 25 100
V
– Ta
th
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r
f
f
500
Forward transfer admittance
ï (mS)
fs
ïY
Common source
300
VDS = 3 V
Ta = 25°C
100
50
30
10
5
3
1
1 10 100
Drain current ID (mA) Drain-Source voltage VDS (V)
ïY
ï – ID
fs
250
Common source
VGS = 0 V
Ta = 25°C
1000
200
(mA)
DR
150
G
100
50
Drain reverse current I
0
0 -1.4-0.4-0.2 -0.6 -0.8 -1 -1.2
D
S
I
DR
I
DR
– VDS
100
50
30
Capacitance C (pF)
10
5
3
Common source
VGS = 0 V
1
f = 1 MHz
0.5
Ta = 25°C
0.3
0.1 1 10 100 5 50 0.5
Drain-Source voltage VDS (V)
C – V
DS
C
iss
C
oss
C
rss
3 30 0.3
5000
3000
t
1000
Switching time t (ns)
of
500
t
300
100
t
on
50
30
10
t
0.1 1 10
Drain current ID (mA)
t – I
D
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
100
250
200
(mW)
D
150
100
P
– Ta
D
Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t
Cu Pad: 0.6 mm2 ´ 3)
50
Drain power dissipation P
0
0
80 120
Ambient temperature Ta (°C)
16040
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A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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