Datasheet SSM3K15FU Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K15FU

SSM3K15FU

High Speed Switching Applications

Analog Switch Applications

· Small package

· Low on resistance

: Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Drain power dissipation (Ta = 25°C) PD (Note) 150 mW

Channel temperature T

Storage temperature T

Note: Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm

(Ta ==== 25°C)

DC I

Pulse I

DS

GSS

D

DP

ch

stg

30 V

±20 V

100

200

150 °C

-55~150 °C

2

´ 3)

mA

Unit: mm

JEDEC ―

JEITA SC-70

TOSHIBA 2-2E1E

Weight: 0.006 g (typ.)

0.6 mm

1.0 mm

Marking Equivalent Circuit

3

D P

1 2

12

3

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-source breakdown voltage V

Drain cut-off current I

Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ¾ 1.5 V
Forward transfer admittance ½Yfs½ VDS = 3 V, ID = 10 mA 25 ¾ ¾ mS

Drain-source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 50 ¾

Turn-off time t

(Ta ==== 25°C)

(BR) DSSID

DS (ON)

VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA

GSS

= 0.1 mA, VGS = 0 30 ¾ ¾ V

VDS = 30 V, VGS = 0 ¾ ¾ 1 mA

DSS

ID = 10 mA, VGS = 4 V ¾ 2.2 4.0

= 10 mA, VGS = 2.5 V ¾ 4.0 7.0

I

D

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 7.8 ¾ pF

iss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.6 ¾ pF

rss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 8.8 ¾ pF

oss

= 5 V, ID = 10 mA,

V

DD

V

= 0~5 V

off

GS

¾

180 ¾

Switching Time Test Circuit

(a) Test circuit (b) VIN

5 V

Input

Output

5 V

90%

W

ns

10%

0

10 ms

VDD = 5 V
D.U.

1%

Input: t

, tf < 5 ns

r

(Z

= 50 W)

out

Common Source
Ta = 25°C

50 9

RL

V

DD

(c) V

OUT

V

V

DS (ON

0 V

DD

10%

90%

t

r

t

on

t

f

t

off

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, V
voltage than V

th

.

GS (on)

(relationship can be established as follows: V

Please take this into consideration for using the device.
V

recommended voltage of 2.5 V or higher to turn on this product.

GS

requires higher voltage than Vth and VGS (off) requires lower

GS (off)

< Vth < V

GS (on)

)

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250

200

(mA)

150

D

100

Drain current I

50

0

0

Drain-Source voltage VDS (V)

– VDS

I

D

3 4 10

121.5 0.5

Common Source

Ta = 25°C

VGS = 2.1 V

2.7

2.5

2.3

1000

Common Source

VDS = 3 V

100

(mA)

10

D

1

Drain current I

0.1

0.01
0

Ta = 100°C

25°C

Gate-Source voltage VGS (V)

– VGS

I

D

-25°C

243 1

10

8

(W)

DS (ON)

R

6

VGS = 2.5 V

4

Drain-Source on resistance

2

0

0

Drain current ID (mA)

R

DS (ON)

80 200160 40

4 V

– ID

Common Source

Ta = 25°C

120

6

5

4

(W)

Drain-Source on resistance

DS (ON)

R

3

2

1

0

0

Gate-source voltage VGS (V)

R

DS (ON)

-25°C

4108 2

– VGS

Ta = 100°C

25°C

Common Source

ID = 10 mA

6

Drain-Source on resistance

(W)

DS (ON)

R

8

Common Source
ID = 10 mA

7

6

5

4

3

2

1

0

-25

VGS = 2.5 V

25 100

Ambient temperature Ta (°C)

R

DS (ON)

50 150125 0

4 V

– Ta

75

2

Common Source

1.8

ID = 0.1 mA
VDS = 3 V

1.6

(V)

th

1.4

1.2

1

0.8

0.6

0.4

Gate threshold voltage V

0.2

0

-25

25 100

Ambient temperature Ta (°C)

– Ta

V

th

50 150125 0

75

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f

r

f

f

1000

Forward transfer admittance

½ (mS)

fs

½Y

Common Source

500

VDS = 3 V

300

Ta = 25°C

100

50

30

10

5

3

1

1

Drain current ID (mA)

ïY

ï – ID

fs

250

Common Source

VGS = 0 V

Ta = 25°C

200

(mA)

DR

150

Drain reveres current I

100010 100

G

100

50

0

0 -1.4-0.4-0.2 -0.6 -0.8 -1 -1.2

D

S

Drain-Source voltage VDS (V)

I

DR

I

DR

– VDS

10000

5000

3000

Switching time t (ns)

1000

500

300

100

t

of

tf

ton

50

30

tr

10

0.1

Drain current ID (mA)

t – I

D

Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C

1001 10

10000

5000

3000

t

of

1000

500

300

100

Switching time t (ns)

t

t

on

t

50

30

10

0.1

Drain current ID (mA)

t – I

D

Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C

100110

100

50

30

10

5

3

1

Capacitance C (pF)

0.5

0.3

0.1

0.1

Drain-Source voltage VDS (V)

C – V

DS

Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C

C

iss

C

oss

C

rss

1001 10

– Ta

P

250

200

(mW)

D

150

100

50

Drain power dissipation P

0

0

20 60 80 100 140 120

Ambient temperature Ta (°C)

D

Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t
Cu Pad: 0.6 mm2 ´ 3)

16040

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RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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