TOSHIBA SSM3K09FU Technical data

查询SSM3K09FU_07供应商

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K09FU

SSM3K09FU

High Speed Switching Applications

• Small package

• Low on resistance

: R
: Ron = 1.2 Ω (max) (@VGS = 4 V)

Absolute Maximum Ratings

= 0.7 Ω (max) (@VGS = 10 V)

on

(Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW

Channel temperature T

Storage temperature T

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

DC I

Pulse I

DS

GSS

D

DP

ch

stg

30 V

±20 V

400

800

150 °C

−55~150 °C

mA

Unit: mm

JEDEC ―

JEITA SC-70

TOSHIBA 2-2E1E

Weight: 0.006 g (typ.)

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm

Marking Equivalent Circuit

D J

1 2 3 1 2

(top view)

2

× 3) Figure 1.

3

Figure 1:

25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm2 × 3

0.6 mm

1.0 mm

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

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SSM3K09FU

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain cut-off current I

Gate threshold voltage Vth VDS = 5 V, ID = 0.1 mA 1.1 ⎯ 1.8 V
Forward transfer admittance ⏐Yfs⏐ VDS = 5 V, ID = 200 mA (Note2) 270 ⎯ ⎯ mS

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ⎯ 72 ⎯ ns

Turn-off time t

(Ta = 25°C)

(BR) DSSID

DS (ON)

VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA

GSS

= 1 mA, VGS = 0 30 ⎯ ⎯ V

VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA

DSS

ID = 200 mA, VGS = 10 V (Note2) ⎯ 0.5 0.7

ID = 200 mA, VGS = 4 V (Note2) ⎯ 0.8 1.2

= 200 mA, VGS = 3.3 V (Note2) ⎯ 1.0 1.7

I

D

VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF

iss

VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 7 ⎯ pF

rss

VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF

oss

= 5 V, ID = 200 mA,

V

DD

= 0~4 V

V

off

GS

⎯

68

⎯

Note2: Pulse test

Switching Time Test Circuit

Ω

ns

(a) Test circuit (b) VIN

V

V

DS (ON

4 V

0 V

DD

90%

10%

10%

90%

t

r

t

on

t

f

t

off

4 V

0

10 μs

VDD = 5 V

1%

D.U.
Input: t

, tf < 5 ns

r

= 50 Ω)

(Z

out

Common Source
Ta = 25°C

Output

Input

L

50 Ω

R

V

DD

(c) V

OUT

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, V
voltage than V

th

.

GS (on)

(relationship can be established as follows: V

Please take this into consideration for using the device.

requires higher voltage than Vth and VGS (off) requires lower

GS (off)

< Vth < V

GS (on)

)

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