TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
SSM3K09FU
High Speed Switching Applications
• Small package
• Low on resistance
: R
: Ron = 1.2 Ω (max) (@VGS = 4 V)
Absolute Maximum Ratings
= 0.7 Ω (max) (@VGS = 10 V)
on
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage V
Gate-Source voltage V
Drain current
Drain power dissipation (Ta = 25°C) PD (Note 1)150 mW
Channel temperature T
Storage temperature T
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
DC I
Pulse I
DS
GSS
D
DP
ch
stg
30 V
±20 V
400
800
150 °C
−55~150 °C
mA
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1E
Weight: 0.006 g (typ.)
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
Marking Equivalent Circuit
D J
1 2 3 1 2
(top view)
2
× 3) Figure 1.
3
Figure 1:
25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm2 × 3
0.6 mm
1.0 mm
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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2007-11-01
SSM3K09FU
)
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. MaxUnit
Gate leakage current I
Drain-Source breakdown voltage V
Drain cut-off current I
Gate threshold voltage Vth VDS = 5 V, ID = 0.1 mA 1.1 ⎯ 1.8 V
Forward transfer admittance ⏐Yfs⏐ VDS = 5 V, ID = 200 mA (Note2)270 ⎯⎯ mS
Drain-Source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton ⎯ 72 ⎯ ns
Turn-off time t
(Ta = 25°C)
(BR) DSSID
DS (ON)
VGS =±16 V, VDS = 0 ⎯⎯±1 μA
GSS
= 1 mA, VGS = 0 30 ⎯⎯ V
VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA
DSS
ID = 200 mA, VGS = 10 V (Note2)⎯ 0.5 0.7
ID = 200 mA, VGS = 4 V (Note2)⎯ 0.8 1.2
= 200 mA, VGS = 3.3 V (Note2)⎯ 1.0 1.7
I
D
VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF
iss
VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 7 ⎯ pF
rss
VDS = 5 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF
oss
= 5 V, ID = 200 mA,
V
DD
= 0~4 V
V
off
GS
⎯
68
⎯
Note2: Pulse test
Switching Time Test Circuit
Ω
ns
(a) Test circuit (b) VIN
V
V
DS (ON
4 V
0 V
DD
90%
10%
10%
90%
t
r
t
on
t
f
t
off
4 V
0
10 μs
VDD = 5 V
1%
D.U.
Input: t
, tf < 5 ns
r
= 50 Ω)
(Z
out
Common Source
Ta = 25°C
Output
Input
L
50 Ω
R
V
DD
(c) V
OUT
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, V
voltage than V
th
.
GS (on)
(relationship can be established as follows: V
Please take this into consideration for using the device.
requires higher voltage than Vth and VGS (off) requires lower
GS (off)
< Vth < V
GS (on)
)
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2007-11-01
1000 2
800
10 4
(mA)
600
D
400
Drain current I
200
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
I
– VDS
D
Common Source
Ta = 25°C
3.3
3.0
2.8
2.6
VGS = 2.4 V
1000
(mA)
D
Drain current I
Common Source
VDS = 5 V
100
25°C
10
Ta = 100°C
1
0.1
I
– VGS
D
−25°C
0.01
0 4 2 1
Gate-Source voltage VGS (V)
3
Drain-Source on resistance
2
Common Source
1.8
ID = 200 mA
1.6
1.4
1.2
(Ω)
1
0.8
DS (ON)
R
0.6
0.4
0.2
0
−25 0 25 75 100 150
VGS = 3.3 V
Ambient temperature Ta (°C)
R
– Ta
DS (ON)
4 V
10 V
50 125
SSM3K09FU
R
1.8
1.6
1.4
1.2
(Ω)
Drain-Source on resistance
Drain-Source on resistance
Forward transfer admittance
1
0.8
DS (ON)
R
0.6
0.4
0.2
0
0 200 400 600 800 1000
2
1.8
1.6
1.4
1.2
(Ω)
1
0.8
DS (ON)
R
0.6
0.4
0.2
0
0 2 4 6 8 10
1000
500
300
100
⏐ (mS)
fs
⏐Y
50
30
10
10
VGS = 3.3 V
4 V
Drain current ID (mA)
R
DS (ON)
Gate-Source voltage VGS (V)
Common Source
VDS = 5 V
Ta = 25°C
30 100
50 300 500
Drain current ID (mA)
DS (ON)
10 V
Ta = 100°C
25°C
−25°C
⏐Y
⏐ – ID
fs
– ID
– V
GS
Common Source
Ta = 25°C
Common Source
ID = 200 mA
1000
3
2007-11-01
SSM3K09FU
r
2
1.8
1.6
(V)
th
1.4
1.2
1
0.8
0.6
0.4
Gate threshold voltage V
0.2
0
−25 0 25 75 100 150
Ambient temperature Ta (°C)
500
100
10
Capacitance C (pF)
1
0.1 1
Drain-Source voltage VDS (V)
200
150
(mW)
D
100
50
Power dissipation P
0
0 160 100 60 20 80 40 120
Ambient temperature Ta (°C)
V
– Ta
th
Common Source
ID = 0.1 mA
VDS = 5 V
50 125
C – V
DS
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
C
C
oss
C
10 100
P
– Ta
D
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.6 mm2 × 3) Figure 1
140
I
– VDS
1000
800
(mA)
DR
600
400
200
Drain Reveres current I
Common Source
VGS = 0
Ta = 25°C
GI
0
−0.2−0.6−0.8 −1.2
0
Drain-Source voltage VDS (V)
DR
D
DR
S
−0.4−1
−1.4
t – I
5000
1000
t
iss
rss
100
Switching time t (ns)
10
off
t
f
t
on
t
1 10
Drain current ID (mA)
D
Common Source
VDD = 5 V
VGS = 0~4 V
Ta = 25°C
100 1000
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2007-11-01
SSM3K09FU
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN GENERAL
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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