TOSHIBA SSM3K03FE Technical data

查询SSM3K03FE供应商

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K03FE

SSM3K03FE

High Speed Switching Applications

Analog Switch Applications

· 2.5 V gate drive

· High input impedance

· Low gate threshold voltage: Vth = 0.7~1.3 V

· Small package

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage VDS 20 V

Gate-source voltage V

DC drain current ID 100 mA

Drain power dissipation P

Channel temperature T

Storage temperature range T

(Ta ==== 25°C)

10 V

GSS

100 mW

150 °C

-55~150 °C

ch

stg

D

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-2HA1B

Weight: 2.3 mg (typ.)

Marking Equivalent Circuit

1

2003-03-27

SSM3K03FE

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-source breakdown voltage V

Drain cut-off current I

Gate threshold voltage V

Forward transfer admittance ïYfsï

Drain-source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.16 ¾

Turn-off time t

(Ta ==== 25°C)

Switching Time Test Circuit

(a) Test circuit

VGS = 10 V, VDS = 0 ¾ ¾ 1 mA

GSS

ID = 100 mA, VGS = 0 20 ¾ ¾ V

(BR) DSS

VDS = 20 V, VGS = 0 ¾ ¾ 1 mA

DSS

VDS = 3 V, ID = 0.1 mA 0.7 ¾ 1.3 V

th

VDS = 3 V, ID = 10 mA 25 50 ¾ mS

ID = 10 mA, VGS = 2.5 V ¾ 4 12 W

DS (ON)

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 11.0 ¾ pF

iss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.3 ¾ pF

rss

VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF

oss

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.19 ¾

off

(b) V

IN

V

GS

(c) V

OUT

VDS

ms

2

2003-03-27