Datasheet SSM3K03FE Datasheet (TOSHIBA)

查询SSM3K03FE供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FE
SSM3K03FE
High Speed Switching Applications
Analog Switch Applications
· High input impedance
· Low gate threshold voltage: Vth = 0.7~1.3 V
· Small package
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V
Gate-source voltage V
DC drain current ID 100 mA
Drain power dissipation P
Channel temperature T
Storage temperature range T
(Ta ==== 25°C)
10 V
GSS
100 mW
150 °C
-55~150 °C
ch
stg
D
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2HA1B
Weight: 2.3 mg (typ.)
Marking Equivalent Circuit
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SSM3K03FE
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-source breakdown voltage V
Drain cut-off current I
Gate threshold voltage V
Forward transfer admittance ïYfsï
Drain-source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.16 ¾
Turn-off time t
(Ta ==== 25°C)
Switching Time Test Circuit
(a) Test circuit
VGS = 10 V, VDS = 0 ¾ ¾ 1 mA
GSS
ID = 100 mA, VGS = 0 20 ¾ ¾ V
(BR) DSS
VDS = 20 V, VGS = 0 ¾ ¾ 1 mA
DSS
VDS = 3 V, ID = 0.1 mA 0.7 ¾ 1.3 V
th
VDS = 3 V, ID = 10 mA 25 50 ¾ mS
ID = 10 mA, VGS = 2.5 V ¾ 4 12 W
DS (ON)
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 11.0 ¾ pF
iss
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.3 ¾ pF
rss
VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF
oss
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.19 ¾
off
(b) V
IN
V
GS
(c) V
OUT
VDS
ms
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SSM3K03FE
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SSM3K03FE
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SSM3K03FE
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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2003-03-27
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