TOSHIBA SSM3J02F Technical data
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
SSM3J02F
Power Management Switch
High Speed Switching Applications
· Small package
· Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V)
: Ron = 0.7 Ω (max) (@VGS = −2.5 V)
· Low gate threshold voltage
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage VDS -30 V
Gate-source voltage V
Drain current
Drain power dissipation (Ta = 25°C) P
Channel temperature T
Storage temperature range T
(Ta ==== 25°C)
DC ID -600
Pulse I
±10 V
GSS
-1200
DP
200 mW
150 °C
-55~150 °C
ch
stg
D
mA
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
Unit: mm
Marking Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27
SSM3J02F
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-source breakdown voltage V
Drain cut-off current I
Gate threshold voltage V
Forward transfer admittance ïYfsï
Drain-source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton ¾ 55 ¾
Turn-off time t
(Ta ==== 25°C)
Note: Pulse test
Switching Time Test Circuit
VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA
GSS
ID = -1 mA, VGS = 0 -30 ¾ ¾ V
(BR) DSS
VDS = -30 V, VGS = 0 ¾ ¾ -1 mA
DSS
VDS = -3 V, ID = -0.1 mA -0.6 ¾ -1.1 V
th
VDS = -3 V, ID = -0.3 A (Note) 0.6 ¾ ¾ S
ID = -0.3 A, VGS = -4 V (Note) ¾ 0.4 0.5
DS (ON)
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 150 ¾ pF
iss
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 21 ¾ pF
rss
oss
off
= -0.3 A, VGS = -2.5 V (Note) ¾ 0.55 0.7
I
D
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 61 ¾ pF
VDD = -15 V, ID = -0.3 A,
V
= 0~-2.5 V, RG = 4.7 W
GS
¾ 52 ¾
W
ns
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for
this product. For normal switching operation, V
lower voltage than V
th
.
(Relationship can be established as follows: V
GS (ON)
GS (off)
Please take this into consideration for using the device.
V
recommended voltage of -2.5 V or higher to turn on this product.
GS
requires higher voltage than Vth and V
< Vth < V
GS (ON)
)
2
requires
GS (off)
2003-03-27
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