TOSHIBA RN2001, RN2002, RN2003, RN2004, RN2005 User Manual

RN2001~RN2006

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2001,RN2002,RN2003
RN2004,RN2005,RN2006

Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1001~RN1006

Equivalent Circuit and Bias Resister Values

Unit: mm

Maximum Ratings

Collector-base voltage V

Collector-emitter voltage

Emitter-base voltage

Collector current IC −100 mA

Collector power dissipation PC 400 mW

Junction temperature Tj 150 °C

Storage temperature range

(Ta = 25°C)

Characteristic Symbol Rating Unit

Type No. R1 (kΩ) R2 (kΩ)

RN2001 4.7 4.7

RN2002 10 10

RN2003 22 22

RN2004 47 47

RN2005 2.2 47

RN2006 4.7 47

−50 V

RN2001~2006

RN2001~2004 −10

RN2005, 2006

RN2001~2006

CBO

V

−50 V

CEO

V

EBO

T

−55~150 °C

stg

−5

JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1B
Weight: 0.21g

V

1

2001-06-07

RN2001~RN2006

Electrical Characteristics

Characteristic Symbol

Collector cut-off
current

Emitter cut-off current

DC current gain

Collector-emitter
saturation voltage

Input voltage (ON)

Input voltage (OFF)

Transition frequency

Collector Output
capacitance

Input resistor

Resistor ratio

RN2001~2006

RN2001 −0.82 ― −1.52

RN2002 −0.38 ― −0.71

RN2003 −0.17 ― −0.33

RN2004

RN2005 −0.078 ― −0.145

RN2006

RN2001 30 ― ―

RN2002 50 ― ―

RN2003 70 ― ―

RN2004 80 ― ―

RN2005 80 ― ―

RN2006

RN2001~2006

RN2001

RN2002

RN2003

RN2004

RN2005

RN2006

RN2001~2004

RN2005, 2006

RN2001~2006

RN2001~2006

RN2001

RN2002

RN2003

RN2004

RN2005

RN2006

RN2001~2004

RN2005

RN2006

(Ta = 25°C)

I

I

I

V

CE (sat)

V

V

I (OFF)

R1/R2 ―

Test

Circuit

CBO

―

CEO

―

―

―

―

―

EBO

h

FE

I (ON)

fT ―

C

―

ob

R1 ―

Test Condition Min Typ. Max Unit

V

= −50V, IE = 0 ― ― −100

CB

V

= −50V, IB = 0 ― ― −500

CE

= −10V, IC = 0

V

EB

= −5V, IC = 0

V

EB

V

= −5V,

CE

I

= −10mA

C

= −5mA,

I

C

IB = −0.25mA

= −0.2V,

V

CE

IC = −5mA

= −5V,

V

CE

IC = −0.1mA

= −10V,

V

CE

IC = −5mA

= −10V, IE = 0,

V

CB

f = 1MHz

−0.082 ― −0.15

−0.074 ― −0.138

80 ― ―

― −0.1 −0.3

−1.1

−1.2

−1.3

−1.5

−0.6

−0.7

−1.0

−0.5

― 200 ―

― 3 6

3.29 4.7 6.11

7 10 13

15.4 22 28.6

32.9 47 61.1

1.54 2.2 2.86

3.29 4.7 6.11

0.9 1.0 1.1

0.0421 0.0468 0.0515

0.09 0.1 0.11

―

―

―

―

―

―

―

―

−2.0

−2.4

−3.0

−5.0

−1.1

−1.3

−1.5

−0.8

nA

mA

V

V

V

MHz

pF

kΩ



2

2001-06-07