Toshiba RN1107F, RN1108F, RN1109F Schematic [ru]
RN1107F~RN1109F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107F,RN1108F,RN1109F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107F~2109F
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)R2 (kΩ)
Maximum Ratings
RN1107F 10
RN1108F 22
RN1109F 47
(Ta = 25°°°°C)
47
47
22
Unit: mm
JEDEC ―
EIAJ ―
TOSHIBA 2-2HA1A
Characteristic Symbol Rating Unit
Collector-base voltage RN1107F~1109F V
Collector-emitter voltage RN1107F~1109F V
RN1107F 6
Emitter-base voltage
Collector current RN1107F~1109F Ic 100 mA
Collector power dissipation RN1107F~1109F P
Junction temperature RN1107F~1109F Tj 150 °C
Storage temperature range RN1107F~1109F T
RN1108F 7
RN1109F
V
CBO
CEO
EBO
c
stg
50 V
50 V
V
15
100 mW
−55~150 °C
1
2001-06-07
RN1107F~RN1109F
Electrical Characteristics
Characteristic Symbol
Collector cut-off current RN1107F~1109F
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency RN1107F~1109F fT ― V
Collector output
capacitance
Input Resistor
Resistor Ratio
RN1107F~1109F V
RN1107F~1109F C
(Ta = 25°°°°C)
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
RN1107F
RN1108F
RN1109F
I
CBO
I
CEO
I
EBO
h
FE
― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V
CE (sat)
V
I (ON)
V
I (OFF)
―
ob
R1
R1/R2
Test
Circuit
V
―
CB
V
―
CE
V
―
EB
V
―
EB
V
―
EB
―
VCE = 5V, IC = 10mA
―
―
―
VCE = 0.2V, IC = 5mA
―
―
―
VCE = 5V, IC = 0.1mA
―
―
CE
= 10V, IE = 0,
V
CB
f = 1MHz
―
―
―
―
―
―
Test Condition Min Typ. Max Unit
= 50V, IE = 0
= 50V, IB = 0
= 6V, IC = 0 0.081
= 7V, IC = 0 0.078
= 15V, IC = 0 0.167
=10V, IC = 5mA ― 250 ― MHz
―
―
― ―
― ―
80
80
70
0.7
1.0
2.2
0.5
0.6
1.5
― 3 6 pF
7 10 13
15.4 22 28.6
32.9 47 61.1
0.191 0.213 0.232
0.421 0.468 0.515
1.92 2.14 2.35
100 nA
500 nA
0.15
―
0.145
―
0.311
―
― ―
― ―
― ―
―
―
―
―
―
―
1.8
2.6
5.8
1.0
1.16
2.6
mA
―
V
V
kΩ
―
2
2001-06-07
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