TOSHIBA MT3S14FS User Manual
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S14FS
MT3S14FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Buffer Applications
•
Superior performance in buffer applications
•
Superior noise characteristics
:NF = 1.7dB, |S
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Collector- base voltage V
Collector- emitter voltage V
Emitter- base voltage V
Collector current I
Base current I
Collector power dissipation PC(Note1) 85 mW
Junction temperature T
Storage temperature range
|2 = 7dB (f = 2 GHz)
21e
(Ta = 25°C)
CBO
CEO
EBO
C
B
j
T
stg
6 V
2.5 V
1.5 V
30 mA
10 mA
125 °C
−55 to 125 °C
Unit: mm
Weight: 0.6 mg (typ.)
0.15±0.05
0.2±0.05
1
0.6±0.05
0.35±0.05
2
0.8±0.05
1.0±0.05
-0.04
+0.02
0.48
0.1±0.05
1.BASE
fSM
JEDEC ―
JEITA ―
TOSHIBA 2-1E1A
2.EMITTER
3.COLLECTOR
3
0.1±0.05
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: 10 mm × 10mm × 0.8 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
3
0 H
2
1
1
2010-08-20
MT3S14FS
Microwave Characteristics
Characteristic Symbol Condition Min Typ. Max Unit
Transition frequency fT VCE = 1 V, IC = 5 mA 9 11 ⎯ GHz
Insertion gain
Noise figure NF VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 1.7 3 dB
Electrical Characteristics
Characteristic Symbol Condition Min Typ. Max Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain hFE VCE = 1 V, IC = 5 mA 90 ⎯ 150 ⎯
Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz (Note2) ⎯ 0.5 0.75 pF
Note2: C
is measured with a three-terminal method using a capacitance bridge.
re
(Ta = 25°C)
⎪S
21e
⎪S
21e
(Ta = 25°C)
CBO
EBO
⎪2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 7 ⎯
⎪2 (2) VCE = 2 V, IC = 15 mA, f = 2 GHz 6.5 9 ⎯
VCB = 4 V, IE = 0 ⎯ ⎯ 0.1 μA
VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA
Caution
dB
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2010-08-20
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