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查询CRS09供应商查询CRS09供应商
Toshiba Schottky Barrier Rectifier Schottky Barrier Type
C R S 0 9
Switching Type Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: V
• Average forward current: I
• Repetitive peak reverse voltage: V
• Small package: “S-FLATTM” (Toshiba designation)
Maximum Ratings
Characteristics Symbol Rating Unit
= 0.46 V (max)
FM
F (AV)
(Ta
25°C)
====
= 1.5 A
RRM
= 30 V
CRS09
Repetitive peak reverse voltage V
Average forward current I
Peak one cycle surge forward current
(non-repetitive)
Junction temperature Tj
Storage temperature T
RRM
F (AV)
I
FSM
stg
30 (50 Hz) A
30 V
1.5 A
−
40~150 °C
−
40~150 °C
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Junction capacitance Cj VR = 10 V, f = 1.0 MHz
Thermal resistance R
(Ta
25°C)
====
V
V
V
I
RRM (1)
I
RRM (2)
IFM = 0.1 A
FM (1)
IFM = 1.0 A
FM (2)
IFM = 1.5 A
FM (3)
V
V
th (j-a)
= 5 V
RRM
= 30 V
RRM
On ceramic substrate
(soldering land 2 mm × 2 mm)
On glass-epoxy substrate
(soldering land 6 mm × 6 mm)
0.35
0.415
0.43 0.46
0.8
10 50
90
70
140
V
µA
pF
°C/W
961001EAA1
•
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility o
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failur
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, pleas
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
•
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.
•
The information contained herein is subject to change without notice.
2000-03-07 1/4
CRS09
Marking Following Indicates the Date of
Manufacture
1 2 3 4
Type code
Lot No.
0
S9
Cathode mark
Month (starting from Alphabet A)
Year (last decimal digit of the current year)
5 6 7 8 9
Standard Soldering Pad
Unit: mm
1.2
1.2
2.8
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier
products. This current leakage and not proper operating temperature or voltage may cause thermal run.
Please take forward and reverse loss into consideration when you design.
2000-03-07 2/4
Maximum allowable temperature
Transient thermal impedance
– VF
I
10
(A)
F
3
1
0.3
0.1
0.03
Instantaneous forward current I
0.01
0 0.3 0.1 0.2 0.8 0.6 0.4 0.5 0.7
Tj = 150°C
125°C
75°C
Instantaneous forward voltage VF (V)
F
25°C
160
Ta MAX – I
140
120
100
80
Rectangular
waveform
60
Ta MAX ( ° C )
40
0°
180°
20
360°
0
0.2 0 0.4 0.6 1.0 1.2
Average forward current I
0.8 1.4 1.6
F (AV)
F (AV)
– t
r
th (j-a)
time t (ms)
(°C/W)
th (j-a)
r
30000
10000
On ceramic substrate:
①
soldering land 2 mm × 2 mm
On glass epoxy substrate:
②
soldering land 6 mm × 6 mm
1000
100
10
1
1 10 100 1000 10000 100000
(A)
②
①
CRS09
1000
500
300
(pF)
j
100
50
30
Junction capacitance C
10
1
3 10 30 5 50 100
Reverse voltage VR (V)
0.8
Rectangular
waveform
0.7
0.6
0°
180°
0.5
(W)
F (AV)
P
Average forward power dissipation
360°
0.4
0.3
0.2
0.1
0
0.2 0 0.4 0.6 1.0 1.2
Average forward current I
Surge forward current
(non-repetitive)
40
(A)
30
FSM
20
10
Peak surge forward current I
0
Cj – VR (typ.)
f = 1 MHz
Ta = 25°C
P
– I
F (AV)
0.8 1.4 1.6
10 1 3 30 100 5 50
Number of cycles
F (AV)
(A)
F (AV)
Ta = 25°C
f = 50 Hz
Half sine waveform
2000-03-07 3/4
CRS09
Repetitive peak reverse current
I
100
Pulse
measurement
10
1
0.1
(mA)
R
I
0.01
0.001
0.0001
0 20 120 80 40 60 100
3 V
Junction temperature Tj (°C)
– Tj (typ.)
R
VR = 30 V
5 V
10 V
20 V
140
160
P
0.8
Rectangular
waveform
0.7
0.6
0.5
(W)
Average reverse power dissipation
0.4
R (AV)
0.3
P
0.2
0.1
0
360°
0°
V
R
Conduction angle
Tj = 150°C
8 0 16 12 24 20 28
4
Reverse voltage VR (V)
α
R (AV)
60°
– V
120°
R
240°
180°
300°
(typ.)
DC
2000-03-07 4/4
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