TOSHIBA 2sk4021 Datasheet

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)

2SK4021

Switching Regulator and DC/DC Converter Applications

Motor Drive Applications

z Low drain-source ON-resistance : R

DS (ON)

z High forward transfer admittance : |Y

z Low leakage current : I

= 100 μA (max) (VDS = 250 V)

DSS

z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain−source voltage V

Drain−gate voltage (RGS = 20 kΩ) V

Gate−source voltage V

Drain current

Drain power dissipation (Tc = 25°C) PD 20 W

Single-pulse avalanche energy (Note 2)

Avalanche current I

Repetitive avalanche energy (Note 3) E

Channel temperature T

Storage temperature range T

DC (Note 1) I

Pulse (Note 1) I

(Ta = 25°C)

DSS

DGR

GSS

D

DP

E

AS

AR

ch

stg

= 0.8 Ω (typ.)

| = 4.5 S (typ.)

fs

51 mJ

250 V

±20 V

4.5 A

18 A

4.5 A

2.0 mJ

150 °C

−55~150 °C

Unit: mm

５．２±

１．５±０．２

０．６ MAX

．

０．２

６．５±

０．２

０．

０．８ MAX

１．1 MAX

９

３

１２３

．

１．６

５．７

４．１±０．２

２．３２．

２．３±０．２

０．１５

０．６±

０．１５

０．６±

０．６

１．１±

０．２

MAX

５．５±０．２

JEDEC ⎯

JEITA ⎯

TOSHIBA 2-7J2B

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case R

Thermal resistance, channel to ambient

R

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

=

50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A

DD

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

6.25 °C / W

th (ch−c)

125 °C / W

th (ch−a)

1

2007-07-24

2SK4021

A

Electrical Characteristics

(Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cutoff current I

Drain−source breakdown voltage V

(BR) DSS

Gate threshold voltage V

Drain−source ON-resistance R

DS (ON)

GSS

DSS

th

VGS = ±16 V, VDS = 0 V — — ±10 μA

VDS = 250 V, VGS = 0 V — — 100 μA

ID = 10 mA, VGS = 0 V 250 — — V

VDS = 10 V, ID = 1 mA 1.5 — 3.5 V

VGS = 10 V, ID = 2.5 A — 0.8 1.0 Ω

Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 2.0 4.5 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

— 440 —

iss

V

— 35 —

rss

oss

= 10 V, VGS = 0 V, f = 1 MHz

DS

— 120 —

Rise time tr — 15 —

Turn−on time ton — 20 —

Switching time

Fall time tf — 15 —

Turn−off time t

— 60 —

off

pF

ns

Total gate charge (gate−source plus gate−drain)

Gate−source charge Qgs — 6 —

Gate−drain (“Miller”) charge Qgd

— 10 —

Q

g

V

≒ 100 V, VGS = 10 V, ID = 4.5 A

DD

nC

— 4 —

Source−Drain Ratings and Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1)

Pulse drain reverse current (Note 1)

Forward voltage (diode) V

Reverse recovery time t

Reverse recovery charge Q

I

DR

I

DRP

DSF

IDR = 4.5 A, VGS = 0 V — — −2.0 V

rr

IDR = 4.5 A, VGS = 0 V

/ dt = 100 A / μs

dI

DR

(Ta = 25°C)

— — — 4.5 A

— — — 18 A

— 110 — ns

— 0.47 — μC

Marking

K4021

Part No. (or abbreviation code)

Lot No.

line indicates

Lead (Pb)-Free Finish

2

2007-07-24

2SK4021

10

Common source Tc = 25°C Pulse Test

8

(A)

D

6

4

Drain current I

2

0

Drain-source voltage VDS (V)

I

D

4 6 8 100 2

– VDS

10

8

VGS = 4V

15

4.5

5.5

I

– VDS

D

10

Common source Tc = 25°C Pulse Test

8

(A)

D

5

6

4

Drain current I

2

0

15

8

10

5.5

5

4.5

VGS = 4V

10

20 30

Drain-source voltage VDS (V)

I

– VGS

D

8

Common source VDS = 10 V Pulse Test

6

(A)

D

4

– VGS

V

DS

10

8

Common source Tc = 25°C Pulse Test

(V)

DS

6

4

ID = 4.5 A

Forward transfer admittance

2

Drain current I

0

0 2

10

1

⎪ (S)

fs

⎪Y

0.1

100

25

Ta = −55°C

4 8

Gate-source voltage VGS (V)

|Y

| – ID

fs

Common source VDS = 10 V Pulse Test

Drain current ID (A)

Ta = −55°C

110

2

Drain-source voltage V

6

10

0

04

8 12 16 20

2

1

Gate-source voltage VGS (V)

25

100

R

10

(Ω)

1

S (ON)

D

R

Drain-source ON resistance

0.1

0.1 1 10

Drain current ID (A)

DS (ON)

– ID

15

VGS = 10 V

3

2007-07-24

2SK4021

−

Drain-source ON resistance

3.0

2.5

2.0

(Ω)

1.5

S (ON)

D

1.0

R

0.5

1000

500

300

100

Capacitance C (pF)

Common source VDS = 10 V Pulse Test

0

−50 −100 2000 50 150 100

Case temperature Tc (°C)

50

Common source

30

VGS = 0 V f = 1MHZ Tc = 25°C

10

0.3 0.1 300.5 1 5 3

Drain-source voltage V

R

DS (ON)

− Tc

ID = 4.5A

Capacitance – V

DS

10

(V)

I

− VDS

DR

100

Common source Tc = 25°C Pulse Test

(A)

DR

2

1

10

1

Drain reverse current I

0.1

5

3

1

V=0V

0.50 1.0 1.5 2.0

Drain-source voltage V

DS

(V)

V

− Tc

th

5

Common source

(V)

th

Gate threshold voltage V

VDS = 10 V ID = 1mA

4

Pulse Test

3

2

1

0

−100 0 50 100 150 200−50

Case temperature Tc (°C)

C

iss

C

oss

C

rss

40

30

20

(W)

D

P

Drain power dissipation

10

0

0 20040 80 160 120

P

− Tc

D

Case temperature Tc (°C)

250

200

(V)

DS

150

100

50

Drain-source voltage V

0

Dynamic input / output

characteristics

V

DS

010 5

Total gate charge Qg (nC)

Common source ID = 4.5 A Tc = 25°C Pulse Test

50V

V

GS

VDD = 200V

100V

15 20

25

20

15

10

(V)

GS

5

Gate-source voltage V

0

4

2007-07-24

2SK4021

c

Safe operating area

100

ID max (pulsed) *

10

ID max (continuous)

(A)

D

1

Drain current I

*: Single nonrepetitive pulse

0.1

Tc = 25°C

Curves must be derated linearly with increase in temperature.

0.01 1 10 100

Drain-source voltage VDS (V)

1 ms *

100 μs *

V

DSS

max

1000

– Tch

E

80

60

(mJ)

AS

40

20

Avalanche energy E

0

25 50 75 100 125 150

Channel temperature (initial) Tch (°C)

15 V

−15 V

AS

B

VDSS

I

V

DD

AR

DS

5

RG =25 Ω V

50 V, L = 4.28mH

DD =

Test circuit Waveform

⎛

1

2

⎜

⋅⋅⋅=

Ε

AS

IL

⎜

2

⎝

B

VDSS

−

B

VDSS

V

DD

2007-07-24

⎞ ⎟ ⎟ ⎠

2SK4021

RESTRICTIONS ON PRODUCT USE

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.

20070701-EN

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

6

2007-07-24