Toshiba 2SK3797 Schematic [ru]
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3797
2SK3797
Switching Regulator Applications
• Low drain-source ON resistance: R
DS (ON)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: I
• Enhancement model: V
= 100 μA (VDS = 600 V)
DSS
= 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
th
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
DC (Note 1) I
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 13 A
Repetitive avalanche energy (Note 3) EAR 5.0 mJ
Channel temperature Tch 150 °C
Storage temperature range T
Pulse (t = 1 ms)
(Note 1)
= 0.32 Ω (typ.)
(Ta = 25°C)
DSS
DGR
GSS
D
I
DP
P
D
E
AS
stg
600 V
600 V
±30 V
13
A
52
50 W
1033 mJ
-55 to 150 °C
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to ambient R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2.5 °C/W
th (ch-c)
62.5 °C/W
th (ch-a)
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2SK3797
∼
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Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Gate-source breakdown voltage V
Drain cutoff current I
Drain-source breakdown voltage V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance R
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 7.0 A 2.1 7.5 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯ 60 ⎯
Turn-on time ton ⎯ 110 ⎯
Switching time
Fall time tf ⎯ 50 ⎯
Turn-off time t
Total gate charge Qg ⎯
Gate-source charge Qgs ⎯
Gate-drain charge Qgd
(Ta = 25°C)
(BR) GSSIG
(BR) DSSID
DS (ON)
VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
GSS
= ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA
DSS
= 10 mA, VGS = 0 V 600 ⎯ ⎯ V
VGS = 10 V, ID = 6.5 A ⎯ 0.32 0.43 Ω
⎯ 3100 ⎯
iss
V
⎯ 20 ⎯
rss
oss
off
= 25 V, VGS = 0 V, f = 1 MHz
DS
10 V
V
GS
0 V
Duty ≤ 1%, tw = 10 μs
V
50 Ω
400 V, VGS = 10 V, ID = 13 A
DD
I
= 6.5 A V
D
V
DD
OUT
RL =
30Ω
200 V
⎯ 270 ⎯
⎯ 215 ⎯
⎯
62
40
22
⎯
⎯
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
pF
ns
nC
Characteristic Symbol Test Condition Min Typ. Max Unit
I
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1) I
Forward voltage (diode) V
Reverse recovery time trr ⎯ 1050 ⎯ ns
Reverse recovery charge Qrr
⎯ ⎯ ⎯ 13 A
DR
⎯ ⎯ ⎯ 52 A
DRP
IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.7
DSF
I
= 13 A, VGS = 0 V,
DR
/dt = 100 A/μs
dI
DR
⎯ 15 ⎯ μC
V
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3797
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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