TOSHIBA 2SK3767 User Manual

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

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2SK3767

Switching Regulator Applications

•

Low drain-source ON resistance: R

•

High forward transfer admittance: |Y

•

Low leakage current: I

•

Enhancement mode: V

= 100μA (VDS = 600 V)

DSS

= 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

th

= 3.3Ω (typ.)

DS (ON)

| = 1.6S (typ.)

fs

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy (Note 2)

Avalanche current IAR 2 A

Repetitive avalanche energy (Note 3) EAR 4 mJ

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

DC (Note 1) I

Pulse (Note 1) I

DSS

DGR

GSS

DP

P

E

D

AS

stg

D

600 V

±30 V

2

5

25 W

93 mJ

-55~150 °C

A

Thermal Characteristics

Unit: mm

1: Gate 2: Drain 3: Source

JEDEC ―

JEITA SC-67

TOSHIBA 2-10U1B

Weight : 1.7 g (typ.)

Characteristics Symbol Max Unit

Thermal resistance, channel to case R

Thermal resistance, channel to ambient R

5.0 °C/W

th (ch-c)

62.5 °C/W

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Gate-source breakdown voltage V

Drain cut-off current I

Drain-source breakdown voltage V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V

Drain-source ON resistance R

Forward transfer admittance ⎪Y

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯

Switching time

Total gate charge Qg ⎯

Gate-source charge Qgs ⎯

Gate-drain charge Qgd

Turn-on time ton ⎯ 55 ⎯

Fall time tf ⎯ 20 ⎯

Turn-off time t

(Ta = 25°C)

(BR) GSSIG

(BR) DSSID

DS (ON)

VGS = ±25 V, VDS = 0 V

GSS

= ±10 µA, VDS = 0 V

VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA

DSS

= 10 mA, VGS = 0 V 600 ⎯ ⎯ V

VGS = 10 V, ID = 1 A ⎯ 3.3 4.5 Ω

⎪ V

fs

iss

rss

oss

off

= 10 V, ID = 1 A 0.8 1.6 ⎯ S

DS

= 10 V, VGS = 0 V, f = 1 MHz

V

DS

10 V

V

GS

0 V

Duty

V

DD

50 Ω

1%, tw = 10 µs

400 V, VGS = 10 V, ID = 2A

I

D

= 1A

V

DD

Output

R

=

L

200 Ω

200 V

⎯ ⎯ ±

30

±

⎯

320 ⎯

⎯

30 ⎯

⎯

100 ⎯

15 ⎯

80 ⎯

⎯

10

⎯

9

⎯

5

⎯

4

⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

µA

V

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1)

Pulse drain reverse current (Note 1) I

Forward voltage (diode) V

Reverse recovery time trr ⎯ 1000 ⎯ ns

Reverse recovery charge Qrr

I

⎯ ⎯ ⎯ 2 A

DR

DRP

IDR = 2 A, VGS = 0 V

DSF

I

= 2 A, VGS = 0 V,

DR

/dt = 100 A/µs

dI

DR

⎯

⎯ 3.5 ⎯ µC

5 A

⎯

⎯ −

1.7 V

Marking

K3767

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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– VDS

I

D

5.5

6

1.6

(A)

D

1.2

2

10

0.8

Drain current I

0.4

VGS = 4V

0

0 4 8 12 16

Drain-source voltage VDS (V)

I

– VGS

D

(A)

D

5

Common source

VDS = 20 V

4

Pulse test

3

2

Drain current I

1

0

0 2 4 6 8 10

Tc=100℃

Gate-source voltage VGS (V)

Common source

Tc = 25°C

Pulse test

−55

25

I

– VDS

4

Common source

Tc = 25°C

3

2

1

0

Pulse test

5.25

(A)

5

4.75

4.5

20

24

D

Drain current I

D

10

8

12 4

16

VGS = 4V

20

6

5.5

5.25

5

4.75

4.5

24

Drain-source voltage VDS (V)

V

– V

DS

ID = 2A

GS

1

Common source

Tc = 25℃

Pulse test

0.5

20

16

(V)

DS

12

8

4

Drain current voltage V

0

4 12 16 20

8

Gate－source voltage VGS (V)

(S)

fs

Y

Forward transfer admittance

0.1

0.01

10

1

0.01

Y

– ID

fs

Tc = −55°C

100

25

Common source

V

DS

Pulse test

0.1

1

Drain current ID (A)

=

20 V

R

100

Common source Tc = 25°C

Pulse test

(Ω)

10

DS (ON)

R

DS (ON)

VGS=10V

– ID

Drain source ON resistance

1

10

0.01 1

0.1

10

Drain current ID (A)

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R

10

Common source

VGS =10V

pulse test

8

)

Ω

6

(

4

DS (ON)

R

Drain-source ON resistance

2

0

Case temperature (°C)

DS (ON)

ID=2A

– Tc

0.5

10

Common source

Tc = 25°C

DR

0.1

0.01

1

0

Pulse test

10

1

−0.4

(A)

1

Drain reverse current I

200 -50 0 50 100 15 0 -100

Drain-source voltage (V)

1000

Capacitance – V

100

DS

6

C

iss

5

(V)

th

4

3

I

DR

V

th

– VDS

VGS = 0, −1 V

0.8

−

– Tc

1.2

−

Common source

VDS = 10 V

ID = 1 mA

Pulse test

−1.6

10

Capacitance C (pF)

1

0.1

50

40

(W)

D

30

20

10

Drain power dissipation P

0

0 40

Common source

VGS = 0 V f = 1 MHz Tc = 25°C

1 10 100

Drian-source voltage VDS (V)

P

– Tc

D

80

Case temperature Tc (°C)

120

C

oss

C

rss

3

2

1

Gate threshold voltage V

0

−80

−40 0 40 80 120 150

Case temperature Tc (°C)

Dynamic Input / output

characteristics

160

800

100V

200V

6 8

VDD = 400V

Common source

ID = 7.5 A Tc = 25°C

Pulse test

10

(V)

600

DS

400

200

Drain-source voltage V

0

0 2

4

16

(V)

12

GS

8

4

Gate-source voltage V

0

12

Total gate charge Qg (nC)

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r

– tw

th

10

3

0.01

Duty=0.5

SINGLE PULSE

P

DM

t

Duty = t/T R

th (ch-c)

T

= 5℃/W

1

0.2

0.3

0.1

th (ch-c)

0.1

0.05

/R

0.02

0.03

th (t)

r

0.01

0.003

Normalized transient thermal impedance

0.001

10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

Pulse width tw (s)

2SK3767

100

ID max (PULSED) *

10

(A)

ID max (CONTINUOUS) *

D

1

DC OPERATION

Drain current I

0.1

※ Single nonrepetitive pulse

Curves must be derated linearly with

increase in temperature.

0.01

1

erating area

Safe o

100 µs *

Tc = 25°C

Tc= 2 5 ℃

10

Darin-source voltage VDS (V)

1 ms *

100

V

DSS

max

1000

200

160

(mJ)

AS

120

80

40

Avalanche energy E

0

25 50 75 100 125 150

15

−15

R

= 25

Ω

G

VDD = 90 V, L = 41mH

E

– Tch

AS

Channel temperature (initial) Tch (°C)

B

V

VDSS

I

AR

V

DD

DS

TEST CIRCUIT WAVE FORM

⎛

1

Ε

AS

2

B

2

⎜

IL

⋅⋅⋅=

⎜

B

VDSS

⎝

VDSS

−

⎞ ⎟ ⎟

V

DD

⎠

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RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

•

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

030619EAA

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TOSHIBA 2SK3767 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual