TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
2SK3767
Switching Regulator Applications
•
Low drain-source ON resistance: R
•
High forward transfer admittance: |Y
•
Low leakage current: I
•
Enhancement mode: V
= 100μA (VDS = 600 V)
DSS
= 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
th
= 3.3Ω (typ.)
DS (ON)
| = 1.6S (typ.)
fs
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 2 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
DC (Note 1) I
Pulse (Note 1) I
DSS
DGR
GSS
DP
P
E
D
AS
stg
D
600 V
600 V
±30 V
2
5
25 W
93 mJ
-55~150 °C
A
Thermal Characteristics
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to ambient R
5.0 °C/W
th (ch-c)
62.5 °C/W
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial)), L = 41mH, RG = 25 Ω , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2004-12-10
2SK3767
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Gate-source breakdown voltage V
Drain cut-off current I
Drain-source breakdown voltage V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance R
Forward transfer admittance ⎪Y
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯
Switching time
Total gate charge Qg ⎯
Gate-source charge Qgs ⎯
Gate-drain charge Qgd
Turn-on time ton ⎯ 55 ⎯
Fall time tf ⎯ 20 ⎯
Turn-off time t
(Ta = 25°C)
(BR) GSSIG
(BR) DSSID
DS (ON)
VGS = ±25 V, VDS = 0 V
GSS
= ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA
DSS
= 10 mA, VGS = 0 V 600 ⎯ ⎯ V
VGS = 10 V, ID = 1 A ⎯ 3.3 4.5 Ω
⎪ V
fs
iss
rss
oss
off
= 10 V, ID = 1 A 0.8 1.6 ⎯ S
DS
= 10 V, VGS = 0 V, f = 1 MHz
V
DS
10 V
V
GS
0 V
Duty
V
DD
50 Ω
1%, tw = 10 µs
400 V, VGS = 10 V, ID = 2A
I
D
= 1A
V
DD
Output
R
=
L
200 Ω
200 V
⎯ ⎯ ±
30
±
⎯
320 ⎯
⎯
30 ⎯
⎯
⎯
100 ⎯
15 ⎯
80 ⎯
⎯
⎯
10
⎯
9
⎯
5
⎯
4
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
µA
V
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1) I
Forward voltage (diode) V
Reverse recovery time trr ⎯ 1000 ⎯ ns
Reverse recovery charge Qrr
I
⎯ ⎯ ⎯ 2 A
DR
DRP
IDR = 2 A, VGS = 0 V
DSF
I
= 2 A, VGS = 0 V,
DR
/dt = 100 A/µs
dI
DR
⎯
⎯
⎯
⎯ 3.5 ⎯ µC
5 A
⎯
⎯ −
1.7 V
Marking
K3767
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2004-12-10