TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302
2SK302
FM Tuner, VHF RF Amplifier Applications
· Low reverse transfer capacitance: C
· Low noise figure: NF = 1.7dB (typ.)
· High power gain: G
= 28dB (typ.)
ps
· Recommend operation voltage: 5~15 V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Gate-source voltage VGS ±5 V
Drain current ID 30 mA
Drain power dissipation PD 150 mW
Channel temperature T
Storage temperature T
(Ta ==== 25°C)
Electrical Characteristics
= 0.035 pF (typ.)
rss
DS
ch
stg
(Ta ==== 25°C)
20 V
125 °C
-55~125 °C
Unit: mm
JEDEC TO-236
JEITA ―
TOSHIBA 2-3F1C
Weight: 0.012 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-source voltage V
Drain current
Gate-source cut-off voltage V
Forward transfer admittance ïYfsï VDS = 10 V, VGS = 0 V, f = 1 kHz ¾ 10 ¾ mS
Input capacitance C
Reverse transfer capacitance C
Power gain GPS ¾ 28 ¾ dB
Noise figure NF
Note: I
classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
DSS
GSS
DSX
I
DSS
GS (OFF)
iss
rss
VDS = 0 V, VGS = ±5 V ¾ ¾ ±50 nA
VGS = -4 V, ID = 100 mA 20 ¾ ¾ V
(Note)
¾ 3.0 ¾ pF
= 10 V, VGS = 0 V 1.5 ¾ 14 mA
V
DS
VDS = 10 V, ID = 100 mA ¾ ¾ -2.5 V
V
= 10 V, VGS = 0 V, f = 1 MHz
DS
V
= 10 V, VGS = 0 V,
DS
f = 100 MHz (Figure 1)
¾ 0.035 0.050 pF
¾ 1.7 3.0 dB
1
2003-03-27
L
: 1.0 mmf silver plated copper wire 4.0 T, 8 mmf ID TAP at 1.0 T from coil end
1
L2: 1.0 mmf silver plated copper wire 3.0 T, 8 mmf ID, 10 mm length
Figure 1 Gps, NF Test Circuit
Marking
2SK302
2
2003-03-27