Toshiba 2SK2915 Schematic [ru]

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

2SK2915

2SK2915

Chopper Regulator, DCDC Converter and Motor Drive
Applications

l Low drain−source ON resistance : R
l High forward transfer admittance : |Y
l Low leakage current : I

= 100 µA (max) (VDS = 600 V)

DSS

DS (ON)

= 0.31 Ω (typ.)

| = 15 S (typ.)

fs

l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drainsource voltage V

Draingate voltage (RGS = 20 k) V

Gatesource voltage V

Drain current

Drain power dissipation (Tc = 25°C) PD 150 W

Single pulse avalanche energy
(Note 2)

Avalanche current IAR 16 A

Repetitive avalanche energy (Note 3) EAR 15 mJ

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

DC (Note 1) ID 16

Pulse (Note 1) I

600 V

DSS

600 V

DGR

±30 V

GSS

64

DP

E

1026 mJ

AS

55~150 °C

stg

A

Thermal Characteristics

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC 

JEITA 

TOSHIBA 2-16C1B

Weight: 4.6 g (typ.)

Characteristics Symbol Max Unit

Thermal resistance, channel to case R

Thermal resistance, channel to
ambient

R

0.833 °C / W

th (chc)

50 °C / W

th (cha)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.01 mH, RG = 25 , IAR = 16 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.
Please handle with caution.

1

2002-06-27

2SK2915

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Gatesource breakdown voltage V

Drain cutoff current I

Drainsource breakdown voltage V

Gate threshold voltage V

Drainsource ON resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 8.0 A 8.0 15.0 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr — 50 —

Turnon time ton — 100 —

Switching time

Fall time tf — 60 —

(Ta = 25°C)

GSS

(BR) GSS

DSS

(BR) DSS

th

DS (ON)

— 3520 —

iss

— 20 —

rss

oss

VGS = ±25 V, VDS = 0 V — — ±10 µA

IG = ±10 µA, VDS = 0 V ±30 — — V

VDS = 600 V, VGS = 0 V — — 100 µA

ID = 10 mA, VGS = 0 V 600 — — V

VDS = 10 V, ID = 1 mA 2.0 — 4.0 V

VGS = 10 V, ID = 8.0 A — 0.31 0.4 

VDS = 25 V, VGS = 0 V, f = 1 MHz

— 300 —

pF

ns

Turnoff time t

Total gate charge (gatesource
plus gatedrain)

Gatesource charge Qgs — 48 —

Gatedrain (“miller”) Charge Qgd

— 325 —

off

Q

— 80 —

g

V

 400 V, VGS = 10 V, ID = 16 A

DD

— 32 —

nC

Source−Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current
(Note 1)

Pulse drain reverse current
(Note 1)

Forward voltage (diode) V

Reverse recovery time t

Reverse recovery charge Q

I

— — — 16 A

DR

I

— — — 64 A

DRP

IDR = 16 A, VGS = 0 V — — 1.7 V

DSF

rr

IDR = 16 A, VGS = 0 V
dI

/ dt = 100 A / µs

rr

DR

(Ta = 25°C)

— 620 — ns

— 7.5 — µC

Marking

2

2002-06-27

2SK2915

3

2002-06-27