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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2614
2SK2614
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain−source ON-resistance : R
z High forward transfer admittance : |Y
z Low leakage current : I
z Enhancement mode : V
= 100 μA (max) (VDS = 50 V)
DSS
= 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
th
DS (ON)
= 0.032 Ω (typ.)
| = 13S (typ.)
fs
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Drain−source voltage V
Drain−gate voltage (RGS = 20 kΩ) V
Gate−source voltage V
Drain current
Drain power dissipation (Tc = 25°C) PD 40 W
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID 20 A
Pulse (Note 1) I
(Ta = 25°C)
DSS
DGR
GSS
50 A
DP
stg
±20 V
−55~150 °C
50
50
V
V
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Unit: mm
JEDEC ―
JEITA SC-64
TOSHIBA 2-7B5B
Weight: 0.36 g (typ.)
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
Ther mal re sis tan ce, channel to ambient R
3.125 °C / W
th (ch−c)
125 °C / W
th (ch−a)
This transistor is an electrostatic-sensitive device. Handle with care.
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JEDEC ―
JEITA ―
TOSHIBA 2-7B7B
Weight: 0.36 g (typ.)
2006-11-17
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2SK2614
A
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cutoff current I
Drain−source breakdown voltage V
Gate threshold voltage V
Drain−source ON-resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 7 13 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr — 15 —
Turn−on time ton — 25 —
Switching time
Fall time tf — 30 —
Turn−off time t
Total gate charge (gate−source
plus gate−drain)
Gate−source charge Qgs — 19 —
Gate−drain (“Miller”) charge Qgd
(Ta = 25°C)
GSS
DSS
(BR) DSS
th
DS (ON)
— 900 —
iss
— 130 —
rss
oss
off
— 25 —
Q
g
VGS = ±16 V, VDS = 0 V — — ±10 μA
VDS = 50 V, VGS = 0 V — — 100 μA
ID = 10 mA, VGS = 0 V 50 — — V
VDS = 10 V, ID = 1 mA 0.8 — 2.0 V
VDS = 4 V, ID = 5 A — 0.055 0.08
V
= 10 V, ID = 10 A — 0.032 0.046
DS
V
= 10 V, VGS = 0 V, f = 1 MHz
DS
— 370 —
I
= 10 A
4.7 Ω
= 10 μs
D
= 3 Ω
L
R
VDD ≈ 30 V
OUT
— 100 —
— 6 —
10 V
V
GS
0 V
Duty ≤ 1%, t
V
DD
w
≈ 40 V, VGS = 10 V, ID = 20 A
Ω
pF
ns
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) V
Reverse recovery time t
Reverse recovery charge Q
— — — 20 A
I
DR
— — — 50 A
I
DRP
IDR = 20 A, VGS = 0 V — — −1.7 V
DSF
rr
rr
Marking
K2614
Part No. (or abbreviation code)
Lot No.
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs
— 60 — ns
— 45 — μC
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2006-11-17
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2SK2614
DS
(
)
(Ω)
– VDS
I
20
Common source
Tc = 25°C
Pulse test
16
(A)
D
12
8
Drain current I
4
0
0
0.2 0.6 0.8
0.4
15
10
8
6
5
3.5
VGS = 3 V
4
1.0
Drain-source voltage VDS (V)
D
50
10
8
15
40
(A)
D
30
20
Drain current I
10
0
0
2 6 8
Drain-source voltage VDS (V)
6
– VDS
I
D
5
4.5
Common source
Tc = 25°C
Pulse test
4
3.5
VGS = 3 V
104
– VGS
I
50
D
Common source
VDS = 10 V
40
Pulse test
100
25
(A)
D
30
Tc = −55°C
20
2.0
1.6
(V)
DS
1.2
0.8
V
DS
– VGS
Common source
Tc = 25°C
Pulse test
ID = 25 A
Forward transfer admittance
Drain current I
10
0
0 2
4 6 8 10
Gate-source voltage VGS (V)
|Y
| – ID
fs
100
Common source
VDS = 10 V
50
Pulse test
30
Tc = −55°C
10
⎪ (S)
fs
⎪Y
5
3
1
1 103 100
5 30 50
Drain current ID (A)
25
100
0.4
Drain-source voltage V
0
0 4
8 12 16 20
12
6
Gate-source voltage VGS (V)
1
Common source
Tc = 25°C
0.5
Pulse test
0.3
R
DS (ON)
– ID
0.1
ON
0.05
R
0.03
Drain-source ON-resistance
0.01
1103100
VGS = 4 V
10
5 30 50
Drain current ID (A)
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2006-11-17
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2SK2614
R
0.20
Common source
Pulse test
0.16
0.12
(Ω)
(ON)
0.08
DS
R
Drain-source ON-resistance
VGS = 4 V
0.04
0
−80 16040−40 80 120
DS (ON)
VGS = 10 V
0
Ambient temperature Ta (°C)
Capacitance – V
5000
3000
– Ta
ID = 12 A
DS
ID = 25 A
6
100
Common source
Tc = 25°C
50
Pulse test
(A)
30
DR
6
12
10
5
3
Drain reverse current I
1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
10
Drain-source voltage VDS (V)
2.0
I
DR
5
3
– VDS
1
VGS = 0, −1 V
V
– Tc
th
1000
500
300
100
Common source
Capacitance C (pF)
50
VGS = 0 V
30
f = 1 MHz
Ta = 25°C
10
0.1 10010 0.3 3
50
40
30
(W)
D
P
20
Drain power dissipation
10
1 30
Drain-source voltage VDS (V)
P
– Ta
D
C
iss
C
oss
C
rss
1.6
1.2
(V)
th
V
0.8
Gate threshold voltage
Common source
0.4
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 16080 −40 400 120
Ambient temperature Ta (°C)
Dynamic input / output
characteristics
50
40
(V)
DS
30
V
DS
20
10
Drain-source voltage V
20
10
V
GS
VDD = 40 V
Common source
ID = 20 A
Ta = 25°C
Pulse test
20
16
12
8
4
(V)
GS
Gate-source voltage V
0
40 120 160
80
2000
Ambient temperature Ta (°C)
4
0
0
10 30 40
0
5020
Total gate charge Qg (nC)
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2SK2614
th (ch-a)
/R
th (t)
r
Normalized transient thermal impedance
SINGLE PULSE
Pulse width t
(S)
w
SAFE OPERATING AREA
300
100
ID max (pulse)*
50
30
ID max (continuous)
(A)
D
10
5
DC OPERATION
3
Drain current I
1
0.5
0.3
0.1
Ta =25°C
* Single pulse
Ta=2 5°C
Curves must be derated linearly
with increase in temperature.
1 3 10 30 100 300 0.3
1 ms*
Drain-source voltage VDS (V)
100 μs*
V
max
DSS
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2006-11-17
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2SK2614
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-17
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