TOSHIBA 2SK2614 Service manual
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2614
2SK2614
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain−source ON-resistance : R
z High forward transfer admittance : |Y
z Low leakage current : I
z Enhancement mode : V
= 100 μA (max) (VDS = 50 V)
DSS
= 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
th
DS (ON)
= 0.032 Ω (typ.)
| = 13S (typ.)
fs
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Drain−source voltage V
Drain−gate voltage (RGS = 20 kΩ) V
Gate−source voltage V
Drain current
Drain power dissipation (Tc = 25°C) PD 40 W
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID 20 A
Pulse (Note 1) I
(Ta = 25°C)
DSS
DGR
GSS
50 A
DP
stg
±20 V
−55~150 °C
50
50
V
V
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Unit: mm
JEDEC ―
JEITA SC-64
TOSHIBA 2-7B5B
Weight: 0.36 g (typ.)
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
Ther mal re sis tan ce, channel to ambient R
3.125 °C / W
th (ch−c)
125 °C / W
th (ch−a)
This transistor is an electrostatic-sensitive device. Handle with care.
1
JEDEC ―
JEITA ―
TOSHIBA 2-7B7B
Weight: 0.36 g (typ.)
2006-11-17
2SK2614
A
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cutoff current I
Drain−source breakdown voltage V
Gate threshold voltage V
Drain−source ON-resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 7 13 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr — 15 —
Turn−on time ton — 25 —
Switching time
Fall time tf — 30 —
Turn−off time t
Total gate charge (gate−source
plus gate−drain)
Gate−source charge Qgs — 19 —
Gate−drain (“Miller”) charge Qgd
(Ta = 25°C)
GSS
DSS
(BR) DSS
th
DS (ON)
— 900 —
iss
— 130 —
rss
oss
off
— 25 —
Q
g
VGS = ±16 V, VDS = 0 V — — ±10 μA
VDS = 50 V, VGS = 0 V — — 100 μA
ID = 10 mA, VGS = 0 V 50 — — V
VDS = 10 V, ID = 1 mA 0.8 — 2.0 V
VDS = 4 V, ID = 5 A — 0.055 0.08
V
= 10 V, ID = 10 A — 0.032 0.046
DS
V
= 10 V, VGS = 0 V, f = 1 MHz
DS
— 370 —
I
= 10 A
4.7 Ω
= 10 μs
D
= 3 Ω
L
R
VDD ≈ 30 V
OUT
— 100 —
— 6 —
10 V
V
GS
0 V
Duty ≤ 1%, t
V
DD
w
≈ 40 V, VGS = 10 V, ID = 20 A
Ω
pF
ns
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) V
Reverse recovery time t
Reverse recovery charge Q
— — — 20 A
I
DR
— — — 50 A
I
DRP
IDR = 20 A, VGS = 0 V — — −1.7 V
DSF
rr
rr
Marking
K2614
Part No. (or abbreviation code)
Lot No.
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs
— 60 — ns
— 45 — μC
2
2006-11-17
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