TOSHIBA 2SK2613 Service manual

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)

2SK2613

2SK2613

Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications

· Low drain-source ON resistance: R

DS (ON)

· High forward transfer admittance: ïY

· Low leakage current: I

= 100 µA (max) (VDS = 800 V)

DSS

= 1.4 Ω (typ.)

ï = 6.0 S (typ.)

fs

· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kW) V

Gate-source voltage V

Drain current

Drain power dissipation (Tc = 25°C) P

Single pulse avalanche energy
(Note 2)

Avalanche current IAR 8 A

Repetitive avalanche energy (Note 3) EAR 15 mJ

Channel temperature Tch 150 °C

Storage temperature range T

(Ta ==== 25°C)

DC (Note 1) I

Pulse (Note 1) I

DSS

DGR

GSS

DP

E

D

AS

stg

D

1000 V

1000 V

±30 V

8

24

150 W

910 mJ

-55~150 °C

A

Thermal Characteristics

1. GATE

2. DRAIN (HEAT SINK)

3. SOURSE

JEDEC ―

JEITA ―

TOSHIBA 2−16C1B

Weight: 4.6 g (typ.)

Unit: mm

Characteristics Symbol Max Unit

Thermal resistance, channel to case R

Thermal resistance, channel to ambient R

0.833 °C/W

th (ch-c)

50 °C/W

th (ch-a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A

Note 3: Repetitive rating: Pulse width limited by max junction temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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2002-08-09

Electrical Characteristics (Ta ==== 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

2SK2613

Gate leakage current I

Drain-source breakdown voltage V

Drain cut-OFF current I

Drain-source breakdown voltage V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V

Drain-source ON resistance R

Forward transfer admittance ïYfsï VDS = 20 V, ID = 4 A 2.0 6.0 ¾ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ¾ 20 ¾

Turn-ON time ton ¾ 40 ¾

Switching time

Fall time tf ¾ 30 ¾

Turn-OFF time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge Qgs ¾ 40 ¾

Gate-drain (“miller”) charge Qgd

VGS = ±30 V, VDS = 0 V ¾ ¾ ±10 mA

GSS

(BR) GSSIG

DSS

(BR) DSSID

DS (ON)

¾ 2000 ¾

iss

¾ 30 ¾

rss

oss

off

Q

¾ 65 ¾

g

= ±10 mA, VDS = 0 V ±30 ¾ ¾ V

VDS = 800 V, VGS = 0 V ¾ ¾ 100 mA

= 10 mA, VGS = 0 V 1000 ¾ ¾ V

VGS = 10 V, ID = 4 A ¾ 1.4 1.7 W

VDS = 25 V, VGS = 0 V, f = 1 MHz

10 V

V

GS

0 V

Duty<1%, tw = 10 ms

~

V

400 V, V

-

DD

= 4 A

I

D

4.7 9

V

DD

= 10 V, ID = 8 A

GS

V

OUT

RL = 100 W

~

400 V

-

¾ 200 ¾

¾ 100 ¾

¾ 25 ¾

Source-Drain Ratings and Characteristics

(Ta ==== 25°C)

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 8 A

Pulse drain reverse current (Note 1) I

Forward voltage (diode) V

Reverse recovery time trr ¾ 1600 ¾ ms

Reverse recovery charge Qrr

¾ ¾ ¾ 24 A

DRP

IDR = 8 A, VGS = 0 V ¾ ¾ -1.9 V

DSF

= 8 A, VGS = 0 V,

I

DR

/dt = 100 A/ms

dI

DR

¾ 24 ¾ mC

Marking

K2613

Type

※

※ Lot Number

Month (starting from alphabet A)

Year (last number of the christian era)

2

2002-08-09

2SK2613

10

Common source
Tc = 25°C
Pulse test

8

(A)

D

6

4

Drain current I

2

0

4 0

Drain-source voltage VDS (V)

20

Common source
VSD = 20 V
Pulse test

16

(A)

D

12

8

Drain current I

4

0

2 0

Gate-source voltage VGS (V)

100

ï (S)

fs

10

1

Forward transfer admittance ïY

Tc = -55°C

– VDS

I

D

10 15

VGS = 4.75 V

8 12 16

– VGS

I

D

25

100

Tc = -55°C

4 6 8

ïY

ï - ID

fs

Common source
VSD = 20 V
Pulse test

25

100

6.0

5.75

5.5

5.25

5.0

I

– VDS

20

Common source

Tc = 25°C

Pulse test

16

(A)

D

12

8

Drain current I

4

20

0

200

Drain-source voltage VDS (V)

D

15

10

6.5

6.25

6.0

5.75

5.5

5.25

VGS = 5.0 V

40 60 80

100

– V

V

DS

20

16

(V)

DS

12

8

4

Drain-source voltage V

10

0

40

Gate-source voltage VGS (V)

GS

Common source

Tc = 25°C

Pulse test

ID = 8 A

4

2

8 12 16

20

DS (ON)

- ID

Common source

Tc = 25°C

Pulse test

R

10

5

3

(9)

DS (ON)

0.5

R

0.3

1

VGS = 10,15

Drain-source on resistance

0.1

0.1

1

Drain current ID (A)

10

100

0.1

0.1 0.3 1 3 10 30

Drain current ID (A)

3

2002-08-09

2SK2613

5

Common source

DS (ON)

VGS = 10 V
Pulse test

4

3

(W)

2

1

Drain-source on resistance R

0

-40 -80

Case temperature Tc (°C)

10000

Capacitance – V

1000

100

Capacitance C (pF)

Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C

10

1 0.1 100010

Drain-source voltage VDS (V)

200

160

(W)

D

120

80

40

Drain power dissipation P

R

- Tc

DS (ON)

ID = 8 A

2

0 40 80

DS

C

iss

C

oss

C

rss

100

- Tc

P

D

- VDS

I

100

10

(A)

DR

1

4

10

-0.20

Drain-source voltage VDS (V)

160

0.1

Drain reverse current I

0

DR

3

1

VGS = 0, -1 V

-0.6

-0.4 -0.8 -1.0

-1.2

- Tc

V

th

5

4

(V)

th

3

2

1

Gate threshold voltage V

0

-80 0 40 80 120 160-40

Case temperature Tc (°C)

Common source
V

= 10 V

DS

ID = 1 mA
Pulse test

Dynamic input/output characteristics

500

400

(V)

DS

300

200

100

Drain-source voltage V

V

DS

V

VDS = 100 V

GS

400

Common source
ID = 8 A
Tc = 25°C
Pulse test

200

20

16

(V)

GS

12

8

4

Gate-source voltage V

0

0 80 120 20040 160

Case temperature Tc (°C)

0

0 40 60 80 10020

Total gate charge Qg (nC)

4

0

2002-08-09

2SK2613

m

10

/R

r

1

Duty = 0.5

0.2

0.1

th (ch-a)

0.1

0.05

0.02

th (t)

0.01

0.01

Single pulse

Normalized transient thermal impedance

0.001
10 m 100 m 1 m 10 m 100

Pulse width tw (S)

100

50

ID max (pulsed) *

30

ID max (continuous)

10

5

(A)

3

D

1

0.5

0.3

Drain current I

0.1

* Single nonrepetitive pulse

0.05
Tc = 25°C

0.03

Curves must be derated linearly

with increase in temperature.

0.01

1

Safe operating area

DC Operation

Tc = 25°C

10 3 10030 10000300

Drain-source voltage VDS (V)

100 ms *

1 ms *

V

max

DSS

1000 3000

- tw

r

th

(mJ)

AS

Avalanche energy E

R

= 25 W

G

V

= 90 V, L = 26.3 mH

DD

P

DM

t

T

Duty = t/T
R

= 0.833°C/W

th (ch-c)

110

– Tch

E

1000

800

600

400

200

0

25

50 75 100 125 150

Channel temperature (initial) Tch (°C)

AS

15 V

-15 V

V

Test circuit Wave form

Ε

AS

B

VDSS

I

AR

V

DD

1

2

DS

æ

B

2

IL

×××=

ç
ç
è

B

VDSS

VDSS

ö
÷
÷

-

V

DD

ø

5

2002-08-09

2SK2613

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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2002-08-09