TOSHIBA 2SK2613 Service manual
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
2SK2613
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
· Low drain-source ON resistance: R
DS (ON)
· High forward transfer admittance: ïY
· Low leakage current: I
= 100 µA (max) (VDS = 800 V)
DSS
= 1.4 Ω (typ.)
ï = 6.0 S (typ.)
fs
· Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kW) V
Gate-source voltage V
Drain current
Drain power dissipation (Tc = 25°C) P
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 8 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range T
(Ta ==== 25°C)
DC (Note 1) I
Pulse (Note 1) I
DSS
DGR
GSS
DP
E
D
AS
stg
D
1000 V
1000 V
±30 V
8
24
150 W
910 mJ
-55~150 °C
A
Thermal Characteristics
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC ―
JEITA ―
TOSHIBA 2−16C1B
Weight: 4.6 g (typ.)
Unit: mm
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to ambient R
0.833 °C/W
th (ch-c)
50 °C/W
th (ch-a)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-09
Electrical Characteristics (Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
2SK2613
Gate leakage current I
Drain-source breakdown voltage V
Drain cut-OFF current I
Drain-source breakdown voltage V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V
Drain-source ON resistance R
Forward transfer admittance ïYfsï VDS = 20 V, ID = 4 A 2.0 6.0 ¾ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ¾ 20 ¾
Turn-ON time ton ¾ 40 ¾
Switching time
Fall time tf ¾ 30 ¾
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ¾ 40 ¾
Gate-drain (“miller”) charge Qgd
VGS = ±30 V, VDS = 0 V ¾ ¾ ±10 mA
GSS
(BR) GSSIG
DSS
(BR) DSSID
DS (ON)
¾ 2000 ¾
iss
¾ 30 ¾
rss
oss
off
Q
¾ 65 ¾
g
= ±10 mA, VDS = 0 V ±30 ¾ ¾ V
VDS = 800 V, VGS = 0 V ¾ ¾ 100 mA
= 10 mA, VGS = 0 V 1000 ¾ ¾ V
VGS = 10 V, ID = 4 A ¾ 1.4 1.7 W
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
V
GS
0 V
Duty<1%, tw = 10 ms
~
V
400 V, V
-
DD
= 4 A
I
D
4.7 9
V
DD
= 10 V, ID = 8 A
GS
V
OUT
RL = 100 W
~
400 V
-
¾ 200 ¾
¾ 100 ¾
¾ 25 ¾
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 8 A
Pulse drain reverse current (Note 1) I
Forward voltage (diode) V
Reverse recovery time trr ¾ 1600 ¾ ms
Reverse recovery charge Qrr
¾ ¾ ¾ 24 A
DRP
IDR = 8 A, VGS = 0 V ¾ ¾ -1.9 V
DSF
= 8 A, VGS = 0 V,
I
DR
/dt = 100 A/ms
dI
DR
¾ 24 ¾ mC
Marking
K2613
Type
※
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-08-09
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