TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2545
2SK2545
DC−DC Converter, Relay Drive and Motor Drive
Applications
z Low drain−source ON resistance : R
z High forward transfer admittance : |Y
z Low leakage current : I
z Enhancement mode : V
= 100 µA (max) (VDS = 600 V)
DSS
= 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
th
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Drain−source voltage V
Drain−gate voltage (RGS = 20 kΩ) V
Gate−source voltage V
Drain current
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 6 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID 6 A
Pulse (Note 1) I
(Ta = 25°C)
DSS
DGR
GSS
DP
E
AS
stg
= 0.9 Ω(typ.)
DS (ON)
| = 5.5 S (typ.)
fs
600 V
600 V
±30 V
24 A
345 mJ
−55~150 °C
Unit: mm
JEDEC ―
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
3.125 °C / W
th (ch−c)
62.5 °C / W
th (ch−a)
1
2006-11-08
2SK2545
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Gate−source breakdown voltage V
Drain cut−off current I
Drain−source breakdown voltage V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain−source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 2.0 5.5 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr — 25 —
Turn−on time ton — 45 —
Switching time
Fall time tf — 40 —
Turn−off time t
(Ta = 25°C)
GSS
(BR) GSS
DSS
(BR) DSS
DS (ON)
— 1300 —
iss
— 130 —
rss
oss
— 150 —
off
VGS = ±25 V, VDS = 0 V — — ±10 µA
IG = ±10 µA, VGS = 0 V ±30 — — V
VDS = 600 V, VDS = 0 V — — 100 µA
ID = 10 mA, VGS = 0 V 600 — — V
VGS = 10 V, ID = 3 A — 0.9 1.25 Ω
= 10 V, VGS = 0 V, f = 1 MHz
V
DS
— 400 —
pF
ns
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge Qgs — 18 —
Gate−drain (“miller”) charge Qgd
— 30 —
Q
g
≈ 400 V, VGS = 10 V, ID = 6 A
V
DD
— 12 —
nC
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) V
Reverse recovery time trr — 1000 — ns
Reverse recovery charge Qrr
— — — 6 A
I
DR
— — — 24 A
I
DRP
IDR = 6 A, VGS = 0 V — — −1.7 V
DSF
= 6 A, VGS = 0 V, dI
I
DR
(Ta = 25°C)
/ dt = 100 A / µs
DR
— 7.0 — µC
Marking
K2545
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08
2SK2545
3
2006-11-08
2SK2545
4
2006-11-08
2SK2545
VDSS
−
⎞
⎟
V
DD
⎠
RG = 25 Ω
V
= 90 V, L = 16.8 mH
DD
1
E
AS
IL
2
5
B
⎛
2
⋅⋅⋅=
⎜
B
VDSS
⎝
2006-11-08
2SK2545
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
6
2006-11-08
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