Toshiba 2SK2033 Schematic [ru]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2033
2SK2033
High Speed Switching Applications
Analog Switch Applications
• High input impedance.
• Low gate threshold voltage: V
• Excellent switching times: t
t
• Small package.
• Enhancement-mode
= 0.5~1.5 V
th
= 0.16 μs (typ.)
on
= 0.15 μs (typ.)
off
Marking Equivalent Circuit
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Gate-source voltage V
DC drain current ID 100 mA
Drain power dissipation PD 200 mW
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
DS
10 V
GSS
stg
20 V
−55~150 °C
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
1
2007-11-01
2SK2033
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-source breakdown voltage V
Drain cut-off current I
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V
Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 25 50 ⎯ mS
Drain-source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.16 ⎯
Turn-off time t
(Ta = 25°C)
(BR) DSSID
DS (ON)
VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA
GSS
= 100 μA, VGS = 0 20 ⎯ ⎯ V
VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA
DSS
ID = 10 mA, VGS = 2.5 V ⎯ 8 12 Ω
VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.5 ⎯ pF
iss
VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.3 ⎯ pF
rss
VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF
oss
VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.15 ⎯
off
Switching Time Test Circuit
μs
2
2007-11-01
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