TOSHIBA 2sj620 Datasheet

2SJ620



TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L

2SJ620

Switching Regulator and DC-DC Converter Applications

Motor Drive Applications

• 4-V gate drive

• Low drain-source ON resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement-model: V

= −100 µA (max) (VDS = −100 V)

DSS

= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (R

Gate-source voltage V

Drain current

Drain power dissipation (Tc = 25°C) P

Single pulse avalanche energy (Note 2)

Avalanche current I

Repetitive avalanche energy (Note 3) EAR 12.5 mJ

Channel temperature Tch 150 °C

Storage temperature range T

(Ta ==== 25°C)

= 20 kΩ) V

GS

DC (Note 1) I

Pulse (Note 1) I

Thermal Characteristics

= 63 mΩ (typ.)

| = 15 S (typ.)

fs



DSS

DGR

GSS

−18

D

−72

DP

D

E

AS

−18 A

AR

stg

−100 V

−100 V ±20 V

125 W

937 mJ

−55 to150 °C

A

JEDEC ―

JEITA SC-97

TOSHIBA 2-9F1B

Weight: 0.74 g (typ.)

Circuit Configuration

2

-π-MOSV)

Unit: mm

4

Characteristics Symbol Max Unit

Thermal resistance, channel to case R

1.0 °C/W

th (ch-c)

Note 1: Please use devices on condition that the channel temperature

is below 150°C.

Note 2: V

= −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω,

DD

I

= −18 A

AR

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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Electrical Characteristics (Ta ==== 25°C)

<

Characteristics Symbol Test Condition Min Typ. Max Unit

2SJ620

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage V

Gate threshold voltage Vth V

Drain-source ON resistance R

Forward transfer admittance

Input capacitance C

Reverse transfer capacitance C

Output capacitance

Rise time

Turn-ON time

Switching time

Total gate charge (gate-source plus gate-drain)

Gate-source charge

Gate-drain (“miller”) charge

Fall time

Turn-OFF time

V

GSS

V

DSS

(BR) DSS

DS (ON)

Y

 V

fs

 2900 

iss

 480 

rss

C

oss

t

 25 

r

t

 45 

on

t

 25 

f

t

off

Q

g

Q

gs

Q

gd

= ±16 V, VDS = 0 V   ±10 µA

GS

= −100 V, VGS = 0 V  

DS

I

= −10 mA, VGS = 0 V

D

= −10 V, ID = −1 mA

DS

V

= −4 V, ID = −9 A  85 120

GS

= −10 V, ID = −9 A  63 90

V

GS

= −10 V, ID = −6 A 7 15  S

DS

= −10 V, VGS = 0 V, f = 1 MHz

V

DS

0 V

V

GS

−10 V

Duty

∼

V

−

DD

Source-Drain Ratings and Characteristics

4.7 Ω

1%, t

=

−80 V, V

= 10 µs

w

= −10 V, ID = −18 A

GS

(Ta ==== 25°C)

= −9 A

I

D

V

DD

= 5.55 Ω

L

R

∼

−50 V

−

V

100   V

−

0.8 

−

 1000 

OUT

 170 

 140 

 90   50 

100 µA

−

2.0 V

−

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) I

Pulse drain reverse current (Note 1) I

Forward voltage (diode) V

Reverse recovery time t

Reverse recovery charge Qrr

Marking

※ Lot Number

J620

※

Type

   −18 A

DR

DRP

I

DSF

 220  µs

rr

= −18 A, VGS = 0 V   1.7 V

DR

= −18 A, VGS = 0 V,

I

DR

/dt = 50 A/µs

dI

DR



  −72 A

 0.97  µC

Month (starting from alphabet A)

Year (last number of the christian era)

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2SJ620

−20

(A)

D

Drain current I

Common source Tc = 25°C pulse test

−16

−12

−8

−4

0

0 −0.4 −0.8 −1.2 −1.6 −2.0

Drain-source voltage VDS (V)

−20

(A)

D

Drain current I

Common source V

= −10 V

DS

pulse test

−16

−12

−8

−4

0

0 −2 −3 −4 −5 −1

Gate-source voltage VGS (V)

100

 (S)

fs

Common source

V

= −10 V

DS

50

pulse test

30

10

5

3

Forward transfer admittance Y

2

−1

Drain current ID (A)

25

100

−5 −10 −30 −50 −3

– VDS

I

D

−8

−6

– VGS

I

D

Y

 − I

fs

Tc = −55°C

−10

Tc = −55°C

D

100

−4.5

I

– VDS

−5

−4.5

D

Common source Tc = 25°C pulse test

−4

−3.5

−3

V

= −2.5 V

GS

−50

−4

−40

−3.5

−3

−2.5

V

= −2 V

GS

(A)

D

−30

−20

Drain current I

−10

0

0 −4 −8 −12 −16 −20

−6

−10

−8

Drain-source voltage VDS (V)

– V

V

DS

−3.0

−2.5

(V)

DS

−2.0

−1.5

−1.0

−0.5

Drain-source voltage V

0

0 −8 −12 −16 −4

−2 −6 −10 −14

Gate-source voltage VGS (V)

GS

Common source Tc = 25°C

pulse test

I

= −18 A

D

−9

−4.5

− I

D

V

= −4 V

GS

−10

−100

25

−100

R

0.3 Common source

Tc = 25°C

Pulse test

0.1

(Ω)

DS (ON)

R

0.03

Drain-source on resistance

0.01

−1 −10

DS (ON)

−3 −30

Drain current ID (A)

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2SJ620

0.20

(Ω)

0.15

DS (ON)

Common source

pulse test

0.10

Drain-source on resistance R

V

= −4 V

GS

0.05

V

= −10 V

GS

0

−80 −40 0 40 80 160 120

Case temperature Tc (°C)

50000

30000

10000

5000

3000

Capacitance – V

1000

Capacitance C (pF)

500

Common source

300

V

GS

f = 1 MHz Tc = 25°C

100

= 0 V

−0.3 −3 −30

Drain-source voltage VDS (V)

200

(W)

150

D

DS (ON)

− Tc

R

DS

−1 −0.1 −100 −10

− Tc

P

D

I

= −18 A

D

−4.5

− V

DS

Common source Tc = 25°C

pulse test

−9

I

V

DR

GS

= 0, 1 V

−100

−50

−30

(A)

DR

−10

−5

−3

−1.0

Drain reverse current I

−0.5

−0.3

0 0.4 1.2 1.6 2.0 2.4 0.8

−10

−5

−1

Drain-source voltage VDS (V)

− Tc

V

th

−4

(V)

−3

th

C

iss

C

oss

C

rss

−2

−1

Gate threshold voltage V

0

−80 −40

0 40 80 120 160

Case temperature Tc (°C)

Common source V I

D

pulse test

= −10 V

DS

= −1 mA

−200

(V)

−120

DS

Dynamic input/output characteristics

Common source I

= −18 A

D

Tc

= 25°C

pulse test

VGS

−16

(V)

−12

GS

V

−40

DD

= −80 V

−8

−4

Gate-source voltage V

0

100

50

Drain power dissipation P

0

40 80 120 160

Case temperature Tc (°C)

Drain-source voltage V

−80

−40

VDS

−20

0

40 80 120 160 200

Total gate charge Qg (nC)

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2SJ620

10

3

1

Duty = 0.5

th (ch-a)

0.3

/R

th (t)

r

Normalized transient thermal impedance

0.2

0.1

0.05

0.02

0.03

0.01

10 µ 100 µ 1m 10m 100m 1 10

0.01

Single pulse

Pulse width tw (S)

−1000

Safe operating area

−100

ID max (pulsed) *

100 µs *

(A)

D

−10

ID max (continuous)

1 ms *

DC operation

Tc = 25°C

*: Single nonrepetitive pulse

−1

Drain current I

Tc = 25°C

Curves must be derated linearly with increase in temperature.

−0.1

V

max

DSS

−1

Drain-source voltage VDS (V)

−10 −100 −1000

− t

r

th

w

PDM

Duty = t/T R

th (ch-c)

t

T

= 1.0°C/W

– Tch

E

1000

800

(mJ)

AS

600

400

Avalanche energy E

200

0

25

50 75 100 125 150

Channel temperature (initi al) Tch (°C)

AS

B

15 V

−15 V

VDSS

I

AR

V

DD

DS

Test circuit Wave form

R

= 25 Ω

G

V

= −50 V, L = 3.56 mH

DD

5



1

Ε

AS

2

B

2

IL

⋅⋅⋅=

  

B

VDSS

  

−

V

DD



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2SJ620

A

RESTRICTIONS ON PRODUCT USE

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

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