TOSHIBA 2sd2719_070607 Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2719
2SD2719
○ Solenoid Drive Applications ○ Motor Drive Applications
• Zener diode included between collector and base
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current IB 0.5 A
Collector power dissipation
Junction temperature Tj 150 °C
Storage temperature range T
Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm
2
)
= 2000 (min) (VCE = 2 V, IC = 1 A)
FE
(Ta = 25°C)
CBO
CEO
EBO
DC IC 0.8
Pulse I
DC 0.8
t = 10 s
3
CP
(Note)
P
C
stg
50 V
60±10 V
8 V
A
W
1.25
−55 to 150 °C
Unit: mm
1. Base
2. Emitter
3. Collector
JEDEC ―
JEITA ―
TOSHIBA 2-3S1C
Weight: 0.01 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Equivalent Circuit

Collector
Base
≒5 kΩ
Emitter
≒300 Ω
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2SD2719
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Collector cutoff current
Emitter cutoff current I
Collector-emitter breakdown voltage V
DC current gain h
Collector-emitter saturation voltage
Base-emitter saturation voltage V
Turn-on time
Switching time
Storage time t
Fall time t
(Ta = 25°C)

Marking

I
VCB = 45 V, IE = 0 ⎯ ⎯ 10 μA
CBO
VCE = 45 V, IE = 0 ⎯ ⎯ 10 μA
I
CEO
VEB = 8 V, IC = 0 0.80 ⎯ 4.0 mA
EBO
(BR) CEOIC
FE
V
CE (sat) (1)IC
V
CE (sat) (2)IC
BE (sat)
t
on
⎯ 4.0 ⎯
stg
f
= 10 mA, IB = 0 50 60 70 V
VCE = 2 V, IC = 1 A 2000 ⎯ ⎯
= 0.5 A, IB = 1 mA ⎯ ⎯ 1.2 V
= 1 A, IB = 1 mA ⎯ ⎯ 1.5 V
IC = 1 A, IB = 1 mA ⎯ ⎯ 2.0 V
Input
20 μs
5V
Duty cycle ≦1%
Output
VCC = 30 V
⎯ 0.4 ⎯
= 30 Ω
L
R
⎯ 0.6 ⎯
μs
Part No. (or abbreviation code)
W V
Lot code (year) Dot: even year No dot: odd year
Lot code (month)
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2SD2719
−
)
I
– VCE
3.2
2.4
(A)
C
1.6
0.8
Collector current I
0
0 2 4 6 8
3
1
0.5
Common emitter Ta = 25°C
0.3
0.22
0.20
IB = 0.18 mA
Collector-emitter voltage VCE (V)
C
3.2
2.4
(A)
C
Collector current I
1.6
0.8
0
0 0.8
25
Ta = 100℃
Base-emitter voltage VBE (V)
h
– IC
10000
Common emitter VCE = 2 V
5000
3000
FE
1000
500
DC current gain h
300
100
0.03
Ta = 100°C
−55
25
0.1 5
0.3 0.05 3
1 0.5
10
Collector current IC (A)
FE
10
5
3
(V)
CE (sat)
V
Collector-emitter saturation voltage
−55
1
25
Ta = 100°C
0.5
0.3
0.1 1 10
Collector current IC (A)
I
C
1.6
V
CE (sat)
– VBE
− 55
– IC
Common emitter VCE = 2 V
2.4
Common emitter IC/IB = 500
3.2
V
– IB
2.4
2.0
(V)
CE
1.6
1.2
0.8
0.4
Collector-emitter voltage V
1.0
0.5
0.1
0
0.3 3 30 300
1.5
2.5
2.0
Common emitter Ta = 25°C
IC = 3.0 A
100
Base current IB (mA)
CE
Base-emitter saturation voltage
10
(V)
BE (sat)
V
0.5
0.3
5
3
1
55
25
Ta =100°C
0.1
Collector current IC (A)
V
BE (sat)
1 10 0.1 1 10
– IC
Common emitter IC/IB = 500
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Transient thermal resistance
p
2SD2719
r
– tw
th
1000
100
(°C/W)
th
r
10
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu
1
0.001
0.01 0.1 1 100 1000
area, 645 mm2)
10
Pulse width tw (s)
Safe Operating Area
10
IC max (pulse) *
1
IC max (continuous)
(A)
C
DC operation
Ta=25℃
*: Single nonrepetitive pulse
0.1
Ta = 25°C
Collector current I
Note that the curves for 100 ms*, 10 s* and DC operation will be different when the devices aren’t mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm characteristic curves must be derated linearly with increase in tem
erature.
0.01
2
). These
100 ms*
10 s*
Collector-emitter voltage VCE (V)
10 ms*
V
1 ms*
CEO
MAX.
1001 10
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2SD2719

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
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