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2SD1314
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
High Power Switching Applications
Motor Control Applications
• High DC current gain: h
• Low saturation voltage: V
= 100 (min) (VCE = 5 V, IC = 15 A)
FE
CE (sat)
= 2 V (max) (IC = 15 A, IB = 0.4 A)
• High speed: tf = 3 µs (max) (IC = 15 A)
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current I
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
(Ta = 25°C)
DC I
Pulse I
CBO
CEO
EBO
C
CP
B
P
stg
Equivalent Circuit
2SD1314
150 W
C
j
600 V
450 V
6 V
15
30
1.0 A
150 °C
−55 to 150 °C
A
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
BASE
≈ 300 Ω
≈ 100 Ω
COLLECTOR
EMITTER
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2SD1314
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter sustaining voltage V
DC current gain hFE VCE = 5 V, IC = 15 A 100 ― ―
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Collector output capacitance Cob VCB = 50 V, IE = 0, f = 1 MHz ― 150 ― pF
Turn-on time ton ― ― 1.0
Switching time
Storage time t
Fall time t
(Ta = 25°C)
CEO (SUS) IC
CE (sat)
BE (sat)
VCB = 600 V, IE = 0 ― ― 1.0 mA
CBO
VEB = 6 V, IC = 0 ― ― 200 mA
EBO
= 0.5 A, L = 40 mH 450 ― ― V
I
= 15 A, IB = 0.4 A
C
50 µs
B1
I
― ― 12
stg
f
0
I
= −IB2 = 0.4 A, duty cycle = 0.5%
B1
Input
B2
I
I
B1
IB2
Output
VCC = 300 V
20 Ω
― ― 2.0 V
― ― 2.5 V
― ― 3.0
Marking
µs
TOSHIBA
2SD1314
JAPAN
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
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2003-02-04
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2SD1314
500
300
(V)
CE
Common emitter
Tc = 25°C
100
50
30
10
5
3
IB = 0.05 A
PC = 150 W
Collector-emitter voltage V
0.5
1
0
5 10 20 25 30 35
Collector current IC (A)
500
300
(V)
CE
100
50
30
10
5
3
IB = 0.05 A
PC = 150 W
Collector-emitter voltage V
0.5
1
0
5 10 20 25 30 35
Collector current IC (A)
30
10
Base-emitter saturation voltage
(V)
BE (sat)
V
0.5
0.3
5
3
1
0.1
0.3 1 3 10
Collector current IC (A)
V
15
V
15
V
BE (sat)
100
– IC
CE
– IC
CE
0.1
– IC
Tc = −40°C
25
0.1
0.2
0.4
Common
emitter
Tc = −40°C
0.2
0.4
Common emitter
IB = 0.4 A
1.0
0.6
1.0
0.6
30
V
– IC
500
300
Common emitter
CE
100
50
30
10
0.5
Tc = 100°C
PC = 60 W
5
3
1
0
5 10 20 25 30 35
Collector current IC (A)
(V)
Collector-emitter voltage V
CE
IB = 0.05 A
15
0.1
0.2
0.4
0.6
1.0
h
– IC
Tc = 100°C
25
FE
−40
Common emitter
VCE = 5 V
30
2000
1000
500
FE
300
100
50
DC current gain h
30
10
0.1
0.3 1 3 10
Collector current IC (A)
100
Switching time – I
50
30
t
10
5
3
1
Switching time (µs)
0.5
0.3
0.1
0
stg
tf
ton
2 4 6 8 10 12 14
Collector current IC (A)
C
Common emitter
VCC = 300 V
IB = ±0.4 A
Tc = 25°C
16
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2003-02-04
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2SD1314
(
50
IC max (pulsed)*
30
Safe Operating Area
IC max
10
continuous)
(A)
5
C
3
1
Collector current I
0.5
*: Single nonrepetitive pulse
0.3
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
3
DC operation
Tc = 25°C
Collector-emitter voltage VCE (V)
100 µs*
1 ms*
30 100
10 ms*
500 µs*
V
CEO
50 µs*
max
300 10
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2003-02-04
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2SD1314
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
5
2003-02-04
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